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Preparation method of P type semiconductor and P type doping agent

A semiconductor and dopant technology, applied in chemical instruments and methods, crystal growth, self-melting liquid pulling method, etc., can solve the problems of low yield of silicon rods, high cost of boron simple substance, high cost of drawing, etc., to achieve Easy to operate, simple preparation process, avoid the effect of drawing process

Active Publication Date: 2013-02-13
YINGLI ENERGY CHINA
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Problems solved by technology

However, the cost of boron in this method is relatively high, and when the Czochralski single crystal furnace pulls dopant silicon rods, the weight of a single rod is 120~130kg, the energy consumption is about 120 yuan / kg, and the control is difficult during the pulling process Larger, resulting in a lower yield of silicon rods, silicon material that fails to be drawn needs to be re-broken for drawing, resulting in higher drawing costs

Method used

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preparation example Construction

[0034] The invention provides a method for preparing a P-type semiconductor, comprising the following steps: doping an unqualified N-type silicon chip with silicon material and casting an ingot to obtain a P-type semiconductor; the unqualified N-type silicon chip is an N-type silicon chip Unqualified silicon wafer after boron diffusion.

[0035] The battery manufacturing process of N-type silicon wafers needs to go through texturing, boron diffusion, plasma enhanced chemical vapor deposition, printing and sintering.

[0036] The texturing process uses the damaged layer of the silicon wafer to texture the surface of the silicon wafer through a mixed solution of nitric acid and hydrofluoric acid, forming an uneven surface and a large number of holes on the surface of the silicon wafer to increase the light-receiving area of ​​the surface of the cell , reduce the reflectivity, thereby improving the conversion efficiency of solar cells.

[0037] Boron diffusion is to infiltrate a...

Embodiment 1

[0066] 1.1 The surface boron content β of the unqualified N-type silicon wafer after boron diffusion is measured by the boron and phosphorus content detector of silicon material is 1.2×10 21 One, the size of the unqualified N-type silicon wafer is 156mm×156mm, and the weight α is 10g.

[0067] 1. The doping target of 1.2P-type semiconductor resistivity is 1.5Ω·cm, and the weight of silicon material is 400kg. According to the calculation of silicon doping software, the required number of boron atoms θ is 1.7×10 21 .

[0068] 1.3 According to the formula δ=θ*α / β, the amount of unqualified N-type silicon wafers used to cast P-type semiconductors is 14g.

[0069] 1.4 Mix 14g of the unqualified N-type silicon chip in 1.1 with 400kg of silicon material and cast an ingot to obtain a P-type semiconductor.

[0070] The P-type semiconductor obtained in 1.4 was tested with a resistivity tester, and its actual resistivity was 1.2Ω·cm.

Embodiment 2

[0072] 2.1 The surface boron content β of the unqualified N-type silicon wafer after boron diffusion is measured by the boron and phosphorus content detector of silicon material is 1.2×10 21 One, the size of the unqualified N-type silicon wafer is 156mm×156mm, and the weight α is 10g.

[0073] 2. The doping target of 2.2P-type semiconductor resistivity is 1.5Ω·cm, and the weight of silicon material is 500kg. According to the calculation of silicon doping software, the required number of boron atoms θ is 2.13×10 21 .

[0074] 2.3 According to the formula δ=θ*α / β, the amount of unqualified N-type silicon wafers used to cast P-type semiconductors is 17.75g.

[0075] 2.4 Mix 17.75g of the unqualified N-type silicon chip in 2.1 with 500kg of silicon material and cast an ingot to obtain a P-type semiconductor.

[0076] The P-type semiconductor obtained in 2.4 was tested with a resistivity tester, and its actual resistivity was 1.3Ω·cm.

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Abstract

The invention provides a preparation method of a P type semiconductor. The method comprises the step of doping an unqualified N type silicon wafer and a silicon material for ingot casting to obtain the P type semiconductor, wherein the unqualified N type silicon wafer is an unqualified silicon wafer after N type silicon wafer boron diffusion. Compared with the prior art in which a boron and silicon master alloy is prepared and used as a P type doping agent, the preparation method has the advantages that firstly, the unqualified N type silicon wafer after the boron diffusion and the silicon material are directly doped for carrying out ingot casting, a high-cost single crystal furnace drawing process of the boron and silicon master alloy is avoided, and the cost is lowered; and secondly, the unqualified N type silicon wafer is recycled, the cost is lower compared with that of single substance boron; and thirdly, the preparation process is simpler and convenient to operate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, in particular to a method for preparing a P-type semiconductor and a P-type dopant. Background technique [0002] The semiconductor formed by doping a small amount of other appropriate elements in the intrinsic semiconductor silicon or germanium is an impurity semiconductor. According to the difference of doping, the impurity semiconductor can be divided into N-type semiconductor and P-type semiconductor. [0003] P-type semiconductors are also called hole-type semiconductors, that is, impurity semiconductors whose hole concentration is much greater than that of free electrons. P-type semiconductors can be formed by doping trivalent elements (such as boron) in pure silicon crystals to replace the positions of silicon atoms in the crystal lattice. In P-type semiconductors, holes are many, and free electrons are few, mainly relying on holes for conduction. Holes are mainly provi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/04C30B29/06
Inventor 潘家明何广川
Owner YINGLI ENERGY CHINA
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