Chemical solution for formation of protective film

A chemical solution and protective film technology, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve the problems of difficult mass production process, poor productivity and cleaning process, and achieve no reduction in productivity, excellent water repellency, and pattern prevention collapse effect

Active Publication Date: 2013-02-13
CENT GLASS CO LTD
View PDF8 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although they all have certain effects, their productivity is lower than that of previous cleaning processes, making it difficult to apply them to mass production processes.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical solution for formation of protective film
  • Chemical solution for formation of protective film
  • Chemical solution for formation of protective film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0170] (1) Preparation of chemical solution for protective film formation

[0171] 1g hexamethyldisilazane [(H 3 c) 3 Si-NH-Si(CH 3 ) 3 ] as silicon compound A, 0.1 g trimethylsilyl trifluoroacetate [(CH 3 ) 3 Si-OC(O)CF 3 ] Acid A and 98.9 g of propylene glycol monomethyl ether acetate (PGMEA) were mixed as an organic solvent to obtain a chemical solution for forming a protective film. Here, it was confirmed that the total amount of water in the starting material of the chemical solution was 5000 mass ppm or less with respect to the total amount of the material. Moisture was removed from the chemical solution using molecular sieve 4A (manufactured by UNION SHOWA K.K.), and then metal impurities were removed from the chemical solution using ion exchange resin (IonKleen SL, manufactured by Pall Corporation, Japan), and then, metal impurities were removed using a filter (Entegris, Inc., Japan) . Optimizer) filtration to remove particles from the chemical solution, thereby...

Embodiment 2~56

[0180] Conditions such as the silicon compound A used in Example 1, the concentration of the silicon compound A, the acid A, the organic solvent, the treatment sequence after the surface treatment of the protective film forming chemical solution were appropriately changed, the surface treatment of the wafer was carried out, and then the surface treatment of the wafer was carried out. evaluate. The results are shown in Table 1~Table 2.

[0181] [Table 2]

[0182]

[0183] where, in the table, “(H 3 c) 2 Si(H)-NH-Si(H)(CH 3 ) 2 "Means tetramethyldisilazane, "C 6 h 5 Si(CH 3 ) 2 -NH-Si(CH 3 ) 2 C 6 h 5 "means diphenyltetramethyldisilazane," CF 3 C 2 h 4 Si(CH 3 ) 2 -NH-Si(CH 3 ) 2 C 2 h 4 CF 3 "means 1,3-bis(trifluoropropyl)tetramethyldisilazane, "(CH 3 ) 3 Si-N(CH 3 ) 2 "Means dimethylaminotrimethylsilane," (CH 3 ) 3 Si-N(C 2 h 5 ) 2 "means diethylaminotrimethylsilane," (CH 3 ) 3 Si-NCO" means trimethylsilyl isocyanate, "C 4 h 9 Si(CH 3 ) ...

Embodiment 57

[0198] 1g hexamethyldisilazane [(H 3 c) 3 Si-NH-Si(CH 3 ) 3 ] as silicon compound B, 0.1 g trifluoroacetic anhydride [{CF 3 C(O)} 2 O) as acid B and 98.9g PGMEA as an organic solvent are mixed, and a protective film containing trimethylsilicon trifluoroacetate as acid A, hexamethyldisilazane silicon as compound A, and PGMEA as an organic solvent is obtained by reaction Except using a chemical solution, it carried out similarly to Example 1. The hexamethyldisilazane contained in the chemical solution of this example is silicon compound B not consumed in the aforementioned reaction for obtaining acid A, and this component functions as silicon compound A. The evaluation results are shown in Table 3. The contact angle after the surface treatment was 82°, showing the effect of imparting water repellency. In addition, the capillary force when water is kept is 0.4MN / m 2 , small capillary force. In addition, the contact angle after UV irradiation was less than 10°, and the pro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Disclosed is a chemical solution for forming a water-repellent protective film (10) on at least the surfaces of concaved parts in a fine concave-convex pattern (2) that is formed on the surface of a wafer (1) containing a silicon atom in at least a part thereof, during the washing of the wafer (1). The chemical solution comprises a silicon compound (A) represented by the general formula: R1 aSi(H)bX4-a-b and an acid (A), wherein the acid (A) comprises at least one compound selected from the group consisting of trimethylsilyltrifluoroacetate, trimethylsilyltrifluoromethanesulfonate, dimethylsilyl- trifluoroacetate, dimethylsilyltrifluoromethanesulfonate, butyldimethylsilyltrifluoroacetate, butyldimethyl- silyltrifluoromethanesulfonate, hexyldimethylsilyl- trifluoroacetate, hexyldimethylsilyltrifluoro- methanesulfonate, octyldimethylsilyltrifluoroacetate, octyldimethylsilyltrifluoromethanesulfonate, decyldimethyl- silyltrifluoroacetate and decyldimethylsilyl- trifluoromethanesulfonate.

Description

technical field [0001] The present invention relates to substrate (wafer) cleaning technology in the manufacture of semiconductor devices, and more particularly to substrate (wafer) cleaning technology for the purpose of improving the manufacturing yield of fine and high-aspect-ratio circuit-patterned devices . In particular, it relates to a chemical solution for forming a water-repellent protective film for the purpose of improving a cleaning process for easily inducing collapse of the concave-convex pattern of a wafer having a fine concave-convex pattern on the surface. Background technique [0002] In semiconductor devices for networks and digital home appliances, further high performance / high functionality and low power consumption are required. Therefore, miniaturization of circuit patterns is progressing, and along with the advancement of miniaturization, the particle size that causes a decrease in manufacturing yield is also miniaturized. As a result, cleaning proce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304H01L21/027
CPCH01L21/306G03F7/40H01L21/02057
Inventor 公文创一斋尾崇荒田忍斋藤真规两川敦山田周平七井秀寿赤松佳则
Owner CENT GLASS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap