Preparation method for side gating graphene field effect transistor

A field-effect transistor and graphene technology, which is applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve the problems of improving the transconductance of field-effect transistors, easily destroying graphene, and expensive SiC wafers. Achieve the effect of improving modulation ability and avoiding adverse effects

Active Publication Date: 2013-03-27
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] At present, the side gate graphene field effect transistor made of pyrolytic SiC has proved that the side gate structure does have the ability to control the transport properties of the graphene conductive channel, but the capacitance per unit area of ​​the side gate is only 0.12 μF/cm2-0.16 μF/ cm 2 , which is lower than that of top-gate field-effect transistors made of graphene (0.74 μF/cm 2 ), such a small capacitance per unit area of ​​the side gate is not conducive to further improving the transconductance of the field effect transistor
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  • Preparation method for side gating graphene field effect transistor
  • Preparation method for side gating graphene field effect transistor

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Example Embodiment

[0027] Example 1:

[0028] The implementation steps of the present invention are as follows:

[0029] Step 1: Put the copper foil into the reaction chamber, and evacuate the reaction chamber until the pressure is lower than 0.01 Pa. Pass H with a flow rate of 10sccm into the reaction chamber 2 , Raise the temperature in the reaction chamber to 900°C, and perform thermal annealing on the copper foil, and the annealing time is 60min;

[0030] Step 2: Pass H2 with a flow rate of 50 sccm and CH4 with a flow rate of 10 sccm into the reaction chamber, and grow graphene by chemical weather deposition CVD for 15 minutes;

[0031] Step 3: After the reaction chamber is naturally cooled to room temperature, take out the growth sample, spin-coating polymethyl methacrylate PMMA on the graphene surface to form a copper foil-graphene-PMMA laminated structure sample;

[0032] Step 4: Air-dry the copper foil-graphene-PMMA laminate structure sample, and then float the PMMA face up on the (NH) concentrat...

Example Embodiment

[0038] Example 2:

[0039] The implementation steps of the present invention are as follows:

[0040] Step A: Put the copper foil into the reaction chamber, and the reaction chamber is evacuated to a pressure lower than 0.01 Pa. Pass H2 with a flow rate of 15 sccm into the reaction chamber, raise the temperature in the reaction chamber to 950°C, and perform thermal annealing on the copper foil for 40 minutes;

[0041] Step B: Pass H2 with a flow rate of 100 sccm and CH4 with a flow rate of 15 sccm into the reaction chamber, and grow graphene for 10 minutes by chemical weather deposition CVD;

[0042] Step C: After the reaction chamber is naturally cooled to room temperature, take out the growth sample, spin-coating polymethyl methacrylate PMMA on the graphene surface to form a copper foil-graphene-PMMA laminate structure sample;

[0043] Step D: Air-dry the copper foil-graphene-PMMA laminate structure sample, and then float the PMMA face up on the (NH 4 ) 3 (S 2 O 4 ) 2 On the surface ...

Example Embodiment

[0049] Example 3:

[0050] The implementation steps of the present invention are as follows:

[0051] Step 1: Put the copper foil into the reaction chamber, and the reaction chamber is evacuated to a pressure lower than 0.01 Pa. Pass H2 with a flow rate of 20sccm into the reaction chamber, raise the temperature in the reaction chamber to 1000°C, and perform thermal annealing on the copper foil for 20min;

[0052] Step 2: Pass H with a flow of 200sccm into the reaction chamber 2 And CH with a flow rate of 20sccm 4 , Grow graphene for 10 minutes by chemical weather deposition CVD;

[0053] Step 3: After the reaction chamber is naturally cooled to room temperature, take out the growth sample, spin-coating polymethyl methacrylate PMMA on the graphene surface to form a copper foil-graphene-PMMA laminated structure sample;

[0054] Step 4: Air-dry the laminated structure sample of the copper foil-graphene-PMMA, and then float the PMMA face up on the (NH) concentration of 70g / L 4 ) 3 (S 2 O 4...

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Abstract

The invention discloses a preparation method for a side gating graphene field effect transistor structure based on chemical vapor deposition graphene. The preparation method comprises placing copper foil in a reaction chamber, vacuumizing the reaction chamber, and performing thermal annealing on the copper foil; growing the graphene by chemical vapor deposition (CVD); transferring the graphene to a high k substrate; utilizing a lithography machine to expose source drain and side gating positions; utilizing an oxygen plasma etching machine to etch the graphene at the side gating positions; using an E-beam device to evaporate metal on a sample; enabling the sample where the metal is evaporated to be placed in acetone to perform ultrasonography, then rinsing the sample in absolute ethyl alcohol, using deionized water to flush the sample, and finally using pure nitrogen to dry the sample. Due to the fact that the side gating structure is adopted, deposition of a top gate medium is avoided, and poor influence of the top gate medium on the graphene material property is avoided. Due to the fact that the high k substrate is adopted, the modulation capability of side gating on a graphene conducting channel is improved.

Description

technical field [0001] The invention belongs to the field of integrated circuit manufacturing and relates to the design and processing of semiconductor devices, in particular to a method for preparing a side-gate graphene field-effect transistor structure based on chemical vapor deposition graphene, which can be used to improve the production efficiency and electrical properties of graphene devices. performance. Background technique [0002] Graphene is an emerging two-dimensional material, and its conductivity type is bipolar transport, which provides the possibility to manufacture new graphene devices. The potential of using graphene to fabricate high-frequency field-effect transistors has attracted extensive research interest. In addition, graphene is also considered to be an ideal material for a new generation of high-frequency electronic devices due to its high mobility, high carrier saturation velocity, and high thermal conductivity. [0003] At present, the gate of ...

Claims

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Application Information

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IPC IPC(8): H01L21/336C23C16/44
Inventor 闫景东王东宁静柴正韩砀张进成郝跃
Owner XIDIAN UNIV
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