Static random access memory unit resisting single event upset

Abstract

The invention discloses a static random access memory unit resisting single event upset. The static random memory unit resisting the single event upset comprises a first differential series voltage switch logic unit, a second differential series voltage switch logic unit, a first PMOS (P-channel Metal Oxide Semiconductor) transistor resistor, a second PMOS transistor resistor, a first access NMOS (N-channel Metal Oxide Semiconductor) transistor and a second access NMOS transistor, wherein the first access NMOS transistor is connected with the first differential series voltage switch logic unit, the second access NMOS transistor is connected with the second differential series voltage switch logic unit, the first PMOS transistor resistor and the second PMOS transistor resistor are connected between the first differential series voltage switch logic unit and the second differential series voltage switch logic unit in parallel, and the first differential series voltage switch logic unit and the second differential series voltage switch logic unit constitute a cross-coupling latch.

Description

Technical field [0001] The present invention relates to the technical field of integrated circuits, and more specifically to a static random memory cell resistant to single event flipping. Background technique [0002] According to the data storage method, semiconductor memory is divided into dynamic random access memory (DRAM), non-volatile memory and static random access memory (SRAM). Static random access memory can achieve fast operating speed in a simple and low-power consumption manner, and compared with DRAM, SRAM does not need to periodically refresh the stored information, so it is relatively easy to design and manufacture. SRAM has thus established its unique advantages and has been widely used in the field of data storage. However, in the application fields of space and aerospace, radiation effects generated by a large number of high-energy particles and cosmic rays, such as single event flipping, will cause the loss of data in the storage unit, thereby destroying the...

AI Technical Summary

Problems solved by technology

[0004] Under the radiation environment, the 6-tube unit with the traditional structure, due to the influence of the radiation effect, especially when a single event event occurs, if any storage node of the latch has a transient flip, it may cause the flip of the latch data , resulting in a data error

Images