Multi-light-source interference exposure device

Abstract

The invention discloses a multi-light-source interference exposure device. The multi-light-source interference exposure device comprises an illumination unit, a light combining unit and an interference unit along a light propagation direction in sequence, wherein the illumination unit comprises multiple laser light sources which respectively generate a coherent light beam, the light combining unit splices the multiple coherent light beams sent by multiple laser light sources, and the interference unit sends multiple coherent beams spliced by the light combining unit outwards to a focal plane of the interference exposure device to respectively carry out interference imaging. The multi-light-source interference exposure device is simple in structure, high in resolution ratio, continuously adjustable in exposure pattern period, and adjustable in size of an exposure field, and improves producing efficiency.

Description

technical field

[0001] The invention relates to the technical field of photolithography, in particular to a multi-light source interference exposure device used in photolithography devices. Background technique

[0002] Under the current background that the line width CD in the field of semiconductor manufacturing technology generally enters below 90nm, using the method of optical projection exposure, in order to produce high-resolution periodic patterns within a certain exposure field range, a high-resolution mask is required. It is equipped with a large numerical aperture NA objective lens, resulting in a smaller depth of focus. As the size of the substrate becomes larger (such as 12-inch silicon wafer, sapphire substrate, etc.), it is often difficult to obtain a good substrate flatness, so it is necessary to introduce a complex, high-precision focusing and leveling system to ensure that the exposure surface of the substrate is in the within the depth of focus of the proj...

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