Unlock instant, AI-driven research and patent intelligence for your innovation.

Gallium-arsenide-based laser diode with co-doped thin film

A laser diode and co-doping technology, applied in lasers, laser components, semiconductor lasers, etc., can solve difficult problems such as p-type ZnO materials

Inactive Publication Date: 2015-02-25
LIYANG HUAJING ELECTRONICS MATERIAL
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the self-compensation of intrinsic shallow donor defects in ZnO, it is difficult to use Sb to dope p-type ZnO materials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium-arsenide-based laser diode with co-doped thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] Such as figure 1 As shown, the structure of the laser diode of the present invention adopting the p-type zinc oxide film co-doped with nitrogen and magnesium is:

[0012] There is an n-type nickel oxide film 3 on the upper surface of the gallium arsenide substrate 2, the thickness of the n-type nickel oxide film 3 is 300-600nm; the nitrogen and magnesium co-doped p-type zinc oxide film 4, which is formed on the On the upper surface of the n-type nickel oxide film 3, the thickness of the nitrogen-magnesium co-doped p-type zinc oxide film 4 is 300-400 nm, and the molar percentage of Mg in the nitrogen-magnesium co-doped p-type zinc oxide film 4 The content is 5-11%, the molar percentage of arsenic is 0.8-1.7%; and, at room temperature, the piezoelectric constant d of the p-type ZnO crystal film 4 co-doped with nitrogen and magnesium 33 Greater than 16pC / N, its resistivity is greater than 2×10 10 Ω·cm.

[0013] The bottom electrode 1 is formed on the lower surface of the galli...

Embodiment 2

[0015] Such as figure 1 As shown, the structure of the laser diode of the present invention adopting the p-type zinc oxide film co-doped with nitrogen and magnesium is:

[0016] On the upper surface of the gallium arsenide substrate 2, there is an n-type nickel oxide film 3, the thickness of the n-type nickel oxide film 3 is 400nm; the nitrogen and magnesium co-doped p-type zinc oxide film 4, which is formed on the n-type On the upper surface of the nickel oxide film 3, the thickness of the nitrogen-magnesium co-doped p-type zinc oxide film 4 is 360 nm, and the molar percentage of Mg in the nitrogen-magnesium co-doped p-type zinc oxide film 4 is 9 %, the molar percentage of arsenic is 1.2%; and, at room temperature, the piezoelectric constant d of the p-type ZnO crystal film 4 co-doped with nitrogen and magnesium 33 Greater than 16pC / N, its resistivity is greater than 2×10 10 Ω·cm.

[0017] The bottom electrode 1 is formed on the lower surface of the gallium arsenide substrate 2 a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
piezoelectric charge coefficientaaaaaaaaaa
Login to View More

Abstract

The invention discloses a laser diode employing a nitrogen-magnesium co-doped p-type zinc oxide thin film. The laser diode structurally comprises an n-type nickel oxide thin film formed on the upper surface of a gallium arsenide substrate, the nitrogen-magnesium co-doped p-type zinc oxide thin film formed on the upper surface of the n-type nickel oxide thin film, a bottom electrode formed on the lower surface of the n-type nickel oxide thin film, and a top electrode formed on the upper surface of the nitrogen-magnesium co-doped p-type zinc oxide thin film.

Description

Technical field [0001] The invention belongs to the field of semiconductors, and specifically relates to a gallium arsenide-based laser diode with a co-doped film. Background technique [0002] Zinc oxide (ZnO) is similar to GaN in terms of lattice structure, unit cell parameters and forbidden band width, and has a higher melting point and greater exciton binding energy than GaN, as well as lower photoluminescence And the threshold of stimulated radiation and good electromechanical coupling characteristics, thermal stability and chemical stability. Therefore, applications in blue-violet light emitting diodes, lasers and related optoelectronic devices have great potential. At room temperature, the band gap of zinc oxide (ZnO) is 3.37eV, and the free exciton binding energy is as high as 60meV, which is much larger than GaN's exciton binding energy of 25meV and room temperature thermal ionization energy of 26meV, so it is easier to be at room temperature or higher Realize exciton ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/327
Inventor 钱时昌
Owner LIYANG HUAJING ELECTRONICS MATERIAL