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A kind of preparation method of single crystal ain nano-cone and nano-sheet

A technology of nanocones and nanosheets, applied in the field of low-dimensional semiconductor nanostructure growth

Inactive Publication Date: 2015-08-12
SHENYANG LIGONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no report on the direct nitriding of commercial aluminum powder below 1000 °C to prepare AlN nanocone and nanosheet structures.

Method used

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  • A kind of preparation method of single crystal ain nano-cone and nano-sheet
  • A kind of preparation method of single crystal ain nano-cone and nano-sheet

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Embodiment 1

[0023] A preparation method of single crystal AlN nano-cone and nano-sheet, which is to spread 0.3g of Al powder with a purity of 99.999% on a molybdenum boat, and buckle a silicon substrate deposited with a layer of aluminum powder directly above the molybdenum boat At 5-6 mm, put the molybdenum boat into a small quartz test tube with a diameter of 20 mm, and then place the small quartz tube in the reaction zone of a horizontal quartz tube furnace with a diameter of 80 mm. After sealing the vacuum system, start vacuuming. When the vacuum degree of the vacuum system is lower than 5 Pa, a flow rate of 500 sccm argon gas is introduced to flush the system. After 20 minutes, the flow of argon gas was turned off, and the system was heated. When the furnace temperature reached 900° C., 50 sccm of ammonia gas and argon gas were simultaneously fed in for 2 hours. Finally, stop the heating system, turn off the flow of ammonia gas when the temperature drops to 680 °C, and at the same ti...

Embodiment 2

[0025] A preparation method of single crystal AlN nano-cones and nano-sheets is that 0.3g of Al powder with a purity of 99.999% is placed in a molybdenum boat, and the silicon wafer deposited with aluminum powder is placed on the positive side of the molybdenum boat as a growth substrate. Put the molybdenum boat into a small quartz test tube with a diameter of 20mm at 5-6mm above, and then place the small quartz tube in the reaction zone of a horizontal quartz tube furnace with a diameter of 80mm. After sealing the vacuum system, start vacuuming. When the vacuum degree of the vacuum system is lower than 5 Pa, a flow rate of 500 sccm argon gas is introduced to flush the system. After 20 minutes, the flow of argon gas was turned off, and the system was heated. When the furnace temperature reached 850° C., 100 sccm of ammonia and argon gas were introduced and kept for 2 hours. Finally, stop the heating system, turn off the flow of ammonia gas when the temperature drops to 680 °C,...

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Abstract

The invention discloses a method for preparing monocrystalline AlN nanosheets and nanocones through a gas-phase transmission method, which is realized through the following process steps: depositing raw material Al powder into a molybdenum boat, depositing a thin aluminum powder layer on a silicon chip, and inverting the silicon chip used as a growth substrate in the molybdenum boat and above an aluminum source; placing the molybdenum boat into a small quartz test tube which is 150 mm in length and 20 mm in diameter, and placing the test tube in a reaction area of a horizontal tube furnace; closing the system, and starting to vacuumize; when the vacuum degree of the system is lower than 5 Pa, introducing argon gas, and performing gas washing on the reaction system; and introducing argon gas and ammonia gas, changing the introduction manners of the ammonia gas and the argon gas, and reacting at 900 DEG C and 850 DEG C to respectively obtain monocrystalline wurtzite structure AlN nanosheets and nanocones. The invention realizes the growth of AlN nanosheets and nanocones by directly reacting commercial aluminum powder and ammonia gas in the absence of any catalyst in a moderate-temperature area (850-900 DEG C) for the first time. The method has the characteristics of simple process, good repetitiveness, low production cost and the like, and is easy to popularize.

Description

technical field [0001] The invention belongs to the technical field of growing low-dimensional semiconductor nanostructures. For the first time in the medium temperature region (850-900°C), using ammonia and commercial aluminum powder as reaction materials, single-crystal AlN nanocones and nanosheets were grown by vapor deposition. Background technique [0002] AlN is an important group III nitride wide bandgap semiconductor optoelectronic material with the highest direct band gap, high thermal conductivity, high melting point, high thermal stability, low electron affinity, excellent chemical stability and non-toxicity Features. It has important applications in optoelectronic devices such as ultraviolet detectors, deep ultraviolet light-emitting diodes, and flat panel displays. The dimension, shape, size and other factors of low-dimensional nanomaterials are closely related to their unique properties, and are also the basis for constructing nano-functional devices. Therefo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/38C30B29/60C30B25/00
Inventor 沈龙海
Owner SHENYANG LIGONG UNIV
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