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A high-voltage integrated gate-commutated thyristor five-level power cabinet

A commutated thyristor, five-level technology, applied in the output power conversion device, the conversion of AC power input to DC power output, electrical components and other directions, can solve the problem of output power reduction, not conducive to maintenance work, reduce output current and other problems to achieve the effect of improving output capability, reducing circuit stray inductance, and improving voltage level

Inactive Publication Date: 2016-02-10
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, in order to ensure the safety of the IGCT, the output current must be reduced, resulting in a reduction in the output power.
In addition, the scattered installation of the power components of the IGCT is not conducive to the maintenance work

Method used

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  • A high-voltage integrated gate-commutated thyristor five-level power cabinet
  • A high-voltage integrated gate-commutated thyristor five-level power cabinet

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Embodiment Construction

[0020] The idea, specific structure and technical effects of the present invention will be further described below in conjunction with the accompanying drawings, so as to fully understand the purpose, features and effects of the present invention.

[0021] figure 1 It is the system diagram of the high-voltage integrated gate-commutated thyristor five-level frequency converter of the present invention. Including pre-charging circuit, 18-channel pulse transformer, rectifier bridge, NPC / H inverter. The control system adopts DSP+FPGA structure. Each driver board triggers two insulated-gate bipolar transistors (IGBTs), requiring a total of 12 pulsed driver boards.

[0022] figure 2 It is a specific embodiment of the high-voltage integrated gate-commutated thyristor five-level power cabinet of the present invention, which includes a phase-shifting transformer unit cabinet 1 , a five-level power unit cabinet 4 and a filter and load wiring unit cabinet 9 . Among them, the phase-s...

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Abstract

The invention discloses a high voltage integration gate pole reversing thyristor five-level power cabinet. The high voltage integration gate pole reversing thyristor five-level power cabinet comprises a phase shifting transformer unit cabinet, a five-level power unit cabinet and a filtration and load wiring unit cabinet, wherein the phase shifting transformer unit cabinet comprises 18 paths of pulse phase shifting transformers, the five-level power unit cabinet is composed of three groups of five-level power module units which are mutually independent, each group of the five-level power module units is composed of a single phase five-level main circuit module, a three phase uncontrollable rectifier module, a partial voltage capacitor and a peripheral circuit module, and the filtration and load wiring unit cabinet comprises a three phase remote control (RC) filter circuit and a load wiring circuit. The high voltage integration gate pole reversing thyristor five-level power cabinet has a modularized structure which can reduce circuit stray inductances and improve output capability of a device, and is convenient to install and assemble, and applicable to different engineering requirements.

Description

technical field [0001] The invention belongs to the technical field of semiconductor switches, and in particular relates to a high-voltage integrated gate commutated thyristor (Integrated Gate Commutated Thyristor, IGCT) five-level power cabinet, which is suitable for MW (MegaWatt) level high-power converters and can be widely used In the field of high voltage and high power transmission. Background technique [0002] The integrated gate commutated thyristor IGCT is an improved device based on the gate turn-off thyristor (GTO). As a new type of power electronic device, it integrates the GTO chip with anti-parallel diode and gate drive circuit, and then connects with the IGCT gate drive in a low-inductance way on the periphery, thus combining the stable turn-off ability of the transistor and Thyristors have the advantage of low on-state losses. IGCT exerts the performance of a thyristor during the turn-on period, and has characteristics similar to that of a transistor durin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/00H02M7/483
Inventor 姜建国潘庆山李俊杰徐亚军刘贺乔树通屠伟
Owner SHANGHAI JIAO TONG UNIV