Silicon nanocone composite graphene nanosheet material and preparation method thereof

Abstract

The invention provides a silicon nanocone composite graphene nanosheet material and a preparation method thereof. The silicon nanocone composite graphene nanosheet material comprises a substrate with a silicon nanocone array on the surface, and fewer layers of graphene nanosheets on the surface of the silicon nanocone array. The preparation method comprises the following steps of 1, preparing a silicon nanocone array structure as the substrate by an inductive couple plasma (ICP) etching technology, and 2, putting the substrate into a hot filament chemical vapor deposition (HFCVD) system, and applying bias voltage of 300 to 380V between a filament and a sample under the conditions of a basic vacuum degree of 0.1Torr, a temperature of 900 to 1100 DEG C, a gas flow ratio (Ar / H2 / CH4) of 50 / 5 / 1 to 50 / 49 / 1 and air pressure of 20 to 30 Torr so that fewer layers of the graphene nanosheets grow. Through control of growth parameters and adjustment of the substrate silicon nanocone structure, the morphology of the graphene nanosheet array structure is controlled and excellent field emission characteristics, high adhesion and super-hydrophobicity are obtained.

Description

technical field [0001] The invention relates to a silicon nanocone composite graphene nanosheet array structure material and a preparation method thereof. Background technique [0002] Graphene is a carbon atom with sp 2 The hybrid orbitals form a hexagonal planar film with a honeycomb lattice, which is a perfect two-dimensional nanomaterial with a thickness of only one atom. It (has a large surface area, excellent thermal conductivity and electrical conductivity, and has a high mechanical strength It has great application potential in many fields such as electronics, optics, energy storage and conversion, solar cells, biology and sensing. In recent years, graphene has attracted great interest, and various researches on graphene materials have been carried out. Research work in this direction, in which how to prepare high-quality graphene materials and design graphene devices has become the focus of attention. [0003] Preparation of graphene Since 2004, someone used tape ...

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Problems solved by technology

The method of tearing graphene with tape is still in use, but this method cannot be used to manufacture graphene in large quantities

Later, people produced single-layer graphene by thermal decomposition of silicon carbide under ultra-high vacuum, see Reference 2, "Epitaxial Graphene" (published in "Solid State Communications" 2007, Vol.143, 92-100) , the graphene prepared in this way has very few defects, but it is also not possible to achieve a large number of manufacturing

At present, there are two methods for preparing graphene in large quantities. One is that graphene can be prepared in large quantities by reducing graphite oxide, as shown in Reference Document 3, "Synthesis of graphene-based nanosheets via chemical reduction of exfoliated graphite oxide" (set in "Carbon" 2007, Vol.45, 1558-1565), but the shape of graphene cannot be controlled, and it is difficult to be used in device preparation

Another way is to grow graphene by chemical vapor deposition, see Reference 4, "Field emission from vertically aligned few-layer graphene" (in "Journal of Applied Physics" 2008, Vol.104, 084301 (1- 5)), this method can prepare few-layer graphene perpendicular to the substrate, the properties of this few-layer graphene and single-layer graphene are very close, and can be used to manufacture graphene devices. The disadvantage of this method is that graphene The shape control is relatively simple, the density is difficult to control, and cannot meet the requirements of some special high-performance devices

[0004] Neither planar single-layer graphene nor upright few-layer graphene have been prepared so far to exhibit the special functions of graphene nanoscale edges.

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