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Diamond nano needle array composite material and preparation method and application thereof

A composite material and nano-needle technology, applied in the field of diamond nano-needle array composite material and its preparation, can solve the problems of small shape factor, poor thermal conductivity, weak super-emission performance, etc., and achieve good consistency, improved stability, excellent Effects of Field Emission Characteristics

Active Publication Date: 2015-04-29
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a diamond nanoneedle array composite material and a preparation method thereof, aiming at solving the problems of poor thermal conductivity, small shape factor and super-emission of the existing graphene composite materials used for field electron emission. Technical issues with poor performance

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  • Diamond nano needle array composite material and preparation method and application thereof
  • Diamond nano needle array composite material and preparation method and application thereof
  • Diamond nano needle array composite material and preparation method and application thereof

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preparation example Construction

[0042] Correspondingly, on the basis of the above-mentioned diamond nanoneedle array composite material, the embodiment of the present invention also provides a preparation method of the diamond nanoneedle array composite material, the process flow of which is as follows figure 1 As shown, please refer to Figures 2 to 3 at the same time. The preparation method of the diamond nanoneedle array composite material comprises the following steps:

[0043] Step S01: Depositing a diamond film layer 1 on the surface of the substrate;

[0044] Step S02: Etching the diamond film layer 1 to form a diamond nanoneedle array 2;

[0045] Step S03: using chemical vapor deposition to grow a three-dimensional graphene layer on the surface of the diamond nanoneedles in the diamond nanoneedle array 2 to form a diamond nanoneedle array 3 with a three-dimensional graphene layer grown on the surface.

[0046] Specifically, in the above step S01, in the substrate ( figure 1 For showing) the method ...

Embodiment 1

[0065] A diamond nano needle array composite material and a preparation method thereof. The preparation method process of the diamond nanoneedle array composite material is as follows: figure 1 , which includes the following steps:

[0066] S11. Prepare a diamond film layer 1 deposited on the surface of the substrate:

[0067] A micron nitrogen-doped nanocrystalline diamond film layer was prepared on a 1 cm×1 cm, n-type (001) silicon wafer by microwave plasma CVD. Before the growth, the silicon substrate was ultrasonically treated with diamond powder for 60 minutes, and the cleaned silicon substrate was placed on a molybdenum substrate table, and placed in a CVD device, and vacuumed to 10 -5 Pa. The specific parameters of its microwave plasma CVD method growth are as follows: methane / hydrogen volume ratio: methane / nitrogen / hydrogen volume ratio: 10% / 45% / 45%, total gas flow: 200sccm, air pressure: 30Torr, microwave power: 1200W, Silicon substrate temperature: 800°, depositi...

Embodiment 2

[0073] A diamond nano needle array composite material and a preparation method thereof. Reference to the preparation method of the diamond nanoneedle array composite material figure 1 , which includes the following steps:

[0074] S21. Prepare a diamond film layer 1 deposited on the surface of the substrate:

[0075] A micron nitrogen-doped nanocrystalline diamond film layer was prepared on a 1 cm×1 cm, n-type (001) silicon wafer by microwave plasma CVD. Before the growth, the silicon substrate was ultrasonically treated with diamond powder for 60 minutes, and the cleaned silicon substrate was placed on a molybdenum substrate table, and placed in a CVD device, and vacuumed to 10 -5 Pa. The specific parameters of its microwave plasma CVD method growth are as follows: methane / hydrogen volume ratio: 10%, total gas flow rate: 200sccm, air pressure: 30Torr, microwave power: 1200W, silicon substrate temperature: 800°C, deposition time: 24 hours;

[0076] S22. Etching the diamond...

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Abstract

The invention provides a diamond nano needle array composite material and a preparation method and an application thereof. The diamond nano needle array composite material provided by the invention comprises a substrate layer and a diamond nano needle array which is formed on the surface of the substrate layer, wherein a three-dimensional graphene layer grows on the surface of a diamond nano needle in the diamond nano needle array. The preparation method of the diamond nano needle array composite material, disclosed by the invention, comprises the following steps: depositing a diamond film layer on the surface of a base body; etching the diamond film layer into a diamond nano needle array; and enabling the three-dimensional graphene layer to grow on the surface of the diamond nano needle array. The diamond nano needle array composite material disclosed by the invention is excellent in heat-conducting property, high in property field emission property and stability, simple in preparation process, and good in condition controllability, and can be applied to gas sensors, biosensors and electrochemical fields.

Description

technical field [0001] The invention belongs to the technical field of field emission materials, and in particular relates to a diamond nano needle array composite material and its preparation method and application. Background technique [0002] Recently, graphene-based materials have attracted widespread interest in applications in various fields, including field-effect transistors, gas detectors, resonators, and energy storage. At the same time, the atomic layer thickness edge and unique two-dimensional structure and electrical properties of graphene materials make it a very potential field electron emission material. There are many methods for preparing graphene, including mechanical exfoliation, chemical exfoliation, epitaxial growth, oxidation and thermal expansion, and chemical vapor deposition. However, most of the graphene deposited by these methods is a two-dimensional film structure deposited on the surface of the substrate. Recent studies have shown that single...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B9/04B32B5/08B32B37/02C23C16/26B82Y30/00B82Y40/00
CPCB32B9/007B32B9/04B32B2255/20C23C16/0245C23C16/26
Inventor 杨扬张文军唐永炳
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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