Growth device and method for phosphorus-germanium-zinc single crystal

The technology of a growth device and a growth method, which is applied in the field of growth devices of phosphorus-germanium-zinc single crystals, can solve the problems of low success rate of single crystals, unstable temperature field, low probability of nucleation of phosphorus-germanium-zinc single crystals, and achieve nucleation rate Improve, ensure stability, and facilitate the effect of automated growth

Inactive Publication Date: 2013-07-10
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a growth device for phosphorus-germanium-zinc single crystal, which can solve the problems of low nucleation probability of phosphorus-germanium-zinc single crystal and low success rate of single crystal caused by unstable temperature field

Method used

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  • Growth device and method for phosphorus-germanium-zinc single crystal
  • Growth device and method for phosphorus-germanium-zinc single crystal
  • Growth device and method for phosphorus-germanium-zinc single crystal

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Experimental program
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Embodiment 1

[0037] In this embodiment, the growth device of phosphorus-germanium-zinc single crystal is as follows figure 1 As shown, its structure includes a crucible holder 1 and a quartz crucible 3, and also includes an insulating powder 2 filled between the crucible holder 1 and the quartz crucible 3, and the quartz crucible 3 is provided with a growth ampoule 4, and the crucible holder 1 is placed on the base 8 on.

[0038] The inner diameter of the crucible holder 1 used is 40 mm, its thickness is 5 mm, and its length is 25 mm. The material of the crucible holder 1 is alumina.

[0039] The material of the insulation powder 2 used is alumina powder.

[0040] The inner diameter of the quartz crucible 3 is 15 mm, its thickness is 2.5 mm, and its length is 20 mm.

[0041] The outer diameter of the growth ampoule 4 is 14mm, its thickness is 1.5mm, its length is 15mm-25mm, and its material is quartz.

[0042] The growth method of the phosphorous germanium zinc single crystal in the pre...

Embodiment 2

[0049] The difference between this embodiment and Embodiment 1 is: the material of the crucible holder 1 is zirconia; other structures and processes of the device are the same.

Embodiment 3

[0051] The difference between this embodiment and Embodiment 1 is: the material of the growth ampoule 4 is boron nitride; other structures and processes of the device are the same.

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Abstract

The invention discloses a growth device and a growth method for a phosphorus-germanium-zinc single crystal. The growth device comprises a growth furnace, a quartz crucible, a crucible support and thermal insulation powder, wherein the thermal insulation powder is filled between the quartz crucible and the crucible support; a growth ampoule is positioned in the quartz crucible; and the crucible support is arranged on a base. According to the growth device, a seed crystal end of the growth ampoule is positioned into a phosphorus-germanium-zinc polycrystal material, thus the single-crystal nucleation rate can be obviously raised, and the temperature of the seed crystal end is relatively stable, therefore, a complete one-way seed crystal can be gained at the initial nucleation period; simultaneously, an inner sleeve and an outer sleeve are designed, thus relatively high dissociation pressure generated in the growth of the phosphorus-germanium-zinc single crystal can be borne, and a relatively flat solid-liquid interface can be effectively promoted during growing, and as a result, the grown phosphorus-germanium-zinc single crystal is complete and free from crack, and the success rate is relatively high.

Description

technical field [0001] The invention relates to the technical field of growing phosphorus-germanium-zinc single crystals, and particularly designs a growth device and method for phosphorus-germanium-zinc single crystals. Background technique [0002] Mid-infrared band (3-5μm) laser light sources have great application prospects in both military and civilian applications. Civilian applications include remote sensing, lidar, atmospheric optical communication, and distance measurement. Military aspects include infrared jamming, night vision, laser communication and so on. The optical parametric oscillator can realize frequency down-conversion by using the nonlinear effect of the material, and convert the near-infrared laser to the mid-infrared band. Phosphorus germanium zinc crystal is a kind of nonlinear optical crystal with excellent performance, which has a large nonlinear coefficient, wide optical transmission range and high thermal conductivity. With the use of phosphor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/06C30B29/10
Inventor 王彪申亮吴东
Owner SUN YAT SEN UNIV
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