Methyl methacrylate (MMA) / bismaleimide (BMI) copolymer organic resistive random access memory and preparation method thereof

A technology of resistive variable memory and resistive variable memory, which is applied in the field of microelectronics, can solve the problems of poor chemical stability and thermal stability, and achieve the effects of easy preparation, simple process flow and low cost

Inactive Publication Date: 2013-07-24
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, most organic materials show problems such as poor chemical stability and thermal stability.

Method used

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  • Methyl methacrylate (MMA) / bismaleimide (BMI) copolymer organic resistive random access memory and preparation method thereof
  • Methyl methacrylate (MMA) / bismaleimide (BMI) copolymer organic resistive random access memory and preparation method thereof
  • Methyl methacrylate (MMA) / bismaleimide (BMI) copolymer organic resistive random access memory and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A preparation method of an MMA / BMI copolymer organic resistive variable memory, comprising the steps of:

[0034] (1) Ultrasonic clean the indium tin oxide (ITO) glass substrate with deionized water, alcohol, and acetone for 15 minutes, and dry it as the bottom electrode for later use. The thickness of the indium tin oxide is 250nm;

[0035] (2) Preparation of MMA / BMI prepolymer: Blend 0.2g of BMI and 10ml of MMA, add 5ml of chloroform as a polar solvent, then mix well on a magnetic stirrer, add 0.0102g of initiator BPO (benzyl peroxide acyl) or AIBN (azobisisobutyronitrile), heated to 75°C and stirred for 3 hours, then raised to 110°C and stirred for 15 minutes to obtain a prepolymerized solution of MMA / BMI copolymer;

[0036] (3) Spin-coat the prepolymerization solution in step (2) twice to deposit on the bottom electrode, and then place it on a 100°C electric heating plate to dry for 5 minutes to form an MMA / BMI prepolymer organic film;

[0037] (4) Cover the prepol...

Embodiment 2

[0041] A preparation method of an MMA / BMI copolymer organic resistive variable memory, comprising the steps of:

[0042] (1) Ultrasonic clean the indium tin oxide (ITO) glass substrate with deionized water, alcohol, and acetone for 15 minutes, and dry it as the bottom electrode for later use. The thickness of the indium tin oxide is 250nm;

[0043] (2) Preparation of MMA / BMI prepolymer: Blend 0.4g of BMI and 10ml of MMA, add 8ml of chloroform as a polar solvent, then mix well on a magnetic stirrer, add 0.0104g of initiator BPO (benzyl peroxide acyl) or AIBN (azobisisobutyronitrile), the temperature was raised to 80°C and stirred for 3 hours, and then the temperature was raised to 115°C and stirred for 15 minutes to obtain a prepolymerized solution of MMA / BMI copolymer;

[0044](3) Spin-coat the prepolymerization solution in step (2) twice to deposit on the bottom electrode, and then dry it on a 110°C electric heating plate for 5 minutes to form an MMA / BMI prepolymer organic fi...

Embodiment 3

[0049] A preparation method of an MMA / BMI copolymer organic resistive variable memory, comprising the steps of:

[0050] (1) Ultrasonic clean the indium tin oxide (ITO) glass substrate with deionized water, alcohol, and acetone for 15 minutes, and dry it as the bottom electrode for later use. The thickness of the indium tin oxide is 250nm;

[0051] (2) Preparation of MMA / BMI prepolymer: Blend 0.6g of BMI and 10ml of MMA, add 10ml of chloroform as a polar solvent, then mix well on a magnetic stirrer, add 0.0106g of initiator BPO (benzyl peroxide acyl) or AIBN (azobisisobutyronitrile), the temperature was raised to 85°C and stirred for 3 hours, and then the temperature was raised to 120°C and stirred for 15 minutes to obtain a prepolymerized solution of MMA / BMI copolymer;

[0052] (3) The prepolymer in step (2) was spin-coated twice to deposit on the bottom electrode, and then dried on a 110°C electric heating plate for 5 minutes to form an MMA / BMI prepolymer organic film;

[0...

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Abstract

The invention discloses a methyl methacrylate (MMA) / bismaleimide (BMI) copolymer organic resistive random access memory and a preparation method thereof. The MMA / BMI copolymer organic resistive random access memory comprises a substrate, a bottom electrode on the substrate, a copolymer organic resistive random access memory layer which is coated on the bottom electrode in a spinning manner, and a top electrode and is characterized in that the organic resistive random access memory layer consists of MMA / BMI copolymer organic films. During preparation, a prepared MMA / BMI pre-polymer solution is coated on the bottom electrode in a spinning manner, and a copolymerization reaction is directly completed on the bottom electrode to obtain an MMA / BMI copolymer, so that the contact resistance between the bottom electrode and an MMA / BMI copolymer organic function layer can be reduced; and the obtained MMA / BMI copolymer organic resistive random access memory is high in performance and high in stability, the off-state current is less than 4nA, and the switching ratio reaches 10<8>.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to an MMA / BMI copolymer organic resistive variable memory and a preparation method thereof. Background technique [0002] Resistive variable memory has many advantages, such as simple structure of storage unit, fast working speed, low power consumption, and is conducive to increasing integration density, and has received extensive attention. At present, the most widely used and most developed non-volatile memory is flash memory (flash memory) device. However, a new generation of resistive RAM (RRAM) with higher storage density, faster response speed, lower operating voltage, and simpler manufacturing process has emerged as the times require, and has the potential to replace flash memory. [0003] Polyimide polymer materials have outstanding physical properties, such as excellent thermal stability, high light transmittance, and low dielectric constant, and are w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00G11C13/00B82Y10/00H10K99/00
Inventor 戴培邦何玉汝卢悦群王亚珍马传国
Owner GUILIN UNIV OF ELECTRONIC TECH
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