A kind of laterally grown znmgo nanowire solar blind area ultraviolet detector and preparation method thereof

Abstract

The invention discloses a lateral growth ZnMgO nanowire solar-blind region ultraviolet detector and a fabrication method thereof. The detector comprises a substrate, an interdigital ZnO film seed layer on the substrate, an interdigital metal electrode evaporated at the top of the ZnO seed layer, and ZnMgO nanowires growing on the side surface of the interdigital ZnO film seed layer. According to the detector and the preparation method, the ZnMgO nanowires have high specific surface areas, can achieve separation of photon-generated carriers effectively, and have higher photocurrent gains, and the detector is simple in fabrication technology and low in cost.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a side-grown ZnMgO nanowire solar-blind zone ultraviolet detector and a preparation method thereof. Background technique [0002] ZnO is a II-VI wide-bandgap semiconductor material with a bandgap of 3.37eV at room temperature. It has important application prospects in optoelectronic devices such as semiconductor lasers, short-wave light-emitting diodes, thin-film transistors, and ultraviolet detectors. After doping Mg, since the band gap of MgO is 7.8eV at room temperature, the band gap of the formed ternary semiconductor material ZnMgO can be continuously adjusted between 3.37 eV and 7.8 eV, and the corresponding wavelength range of the band gap change is 159~368nm , completely covering the so-called solar blind zone (200-280 nm) ultraviolet radiation band that hardly exists in the near-Earth atmosphere. Moreover, ZnO-based optical functional materials have bett...

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Problems solved by technology

At present, the one-dimensional structure of ZnMgO is usually grown in the direction perpendicular to the substrate by various methods, which has problems such as difficulty in making device electrodes and integrating the device with other semiconductor devices.

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