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A kind of laterally grown znmgo nanowire solar blind area ultraviolet detector and preparation method thereof

An ultraviolet detector and lateral growth technology, which is applied in the field of photoelectric detection, can solve problems such as difficulty in integrating devices with other semiconductor devices, and difficulty in making device electrodes, and achieve effective manufacturing methods, high photocurrent gain, and simple preparation processes.

Inactive Publication Date: 2015-10-14
ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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Problems solved by technology

At present, the one-dimensional structure of ZnMgO is usually grown in the direction perpendicular to the substrate by various methods, which has problems such as difficulty in making device electrodes and integrating the device with other semiconductor devices.

Method used

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  • A kind of laterally grown znmgo nanowire solar blind area ultraviolet detector and preparation method thereof

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Embodiment

[0022] a. Use quartz material as an insulating substrate, clean it with ultrasonic vibration in deionized water, absolute ethanol, and acetone for 10 minutes, and dry it with nitrogen;

[0023] b. A ZnO film seed layer with a thickness of about 150nm is grown on a quartz substrate by pulsed laser deposition technology;

[0024] c. Use a vacuum coating machine to coat a layer of gold film with a thickness of about 50 nm on the surface of the ZnO thin film seed layer as an electrode.

[0025] d. Etch the ZnO thin film seed layer and the gold electrode into interdigitated shapes with a length of 500 μm, a width of 5 μm, and a spacing of 5 μm by using traditional photolithography and lift-off technology.

[0026] e. Put the above electrode into a hydrothermal reaction kettle, and grow ZnMgO nanowires on the side of the interdigitated ZnO seed layer by hydrothermal method. Obtain a solar-blind zone ultraviolet detector grown laterally with ZnMgO nanowires.

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Abstract

The invention discloses a lateral growth ZnMgO nanowire solar-blind region ultraviolet detector and a fabrication method thereof. The detector comprises a substrate, an interdigital ZnO film seed layer on the substrate, an interdigital metal electrode evaporated at the top of the ZnO seed layer, and ZnMgO nanowires growing on the side surface of the interdigital ZnO film seed layer. According to the detector and the preparation method, the ZnMgO nanowires have high specific surface areas, can achieve separation of photon-generated carriers effectively, and have higher photocurrent gains, and the detector is simple in fabrication technology and low in cost.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a side-grown ZnMgO nanowire solar-blind zone ultraviolet detector and a preparation method thereof. Background technique [0002] ZnO is a II-VI wide-bandgap semiconductor material with a bandgap of 3.37eV at room temperature. It has important application prospects in optoelectronic devices such as semiconductor lasers, short-wave light-emitting diodes, thin-film transistors, and ultraviolet detectors. After doping Mg, since the band gap of MgO is 7.8eV at room temperature, the band gap of the formed ternary semiconductor material ZnMgO can be continuously adjusted between 3.37 eV and 7.8 eV, and the corresponding wavelength range of the band gap change is 159~368nm , completely covering the so-called solar blind zone (200-280 nm) ultraviolet radiation band that hardly exists in the near-Earth atmosphere. Moreover, ZnO-based optical functional materials have bett...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/18
CPCY02P70/50
Inventor 邵景珍方晓东董伟伟邓赞红秦娟娟
Owner ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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