Method for quickly preparing simplified single CeO2 buffering layer on IBAD (Ion Beam Assisted Deposition)-MgO base band by using PLD (Pulsed Laser Deposition) technology

A buffer layer and technical technology, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problems that it is difficult to obtain the critical current density YBCO superconducting layer, the degree of orientation cannot be obtained, etc., and reach the experimental parameters Easy to control, excellent in-plane texture, and simple manufacturing process

Inactive Publication Date: 2013-08-07
SHANGHAI SUPERCONDUCTOR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this typical multi-layer buffer layer structure (MgO layer and LMO layer), the degree of orientation of the layer immediately below the YBCO superconducting layer cannot be obtaine

Method used

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  • Method for quickly preparing simplified single CeO2 buffering layer on IBAD (Ion Beam Assisted Deposition)-MgO base band by using PLD (Pulsed Laser Deposition) technology
  • Method for quickly preparing simplified single CeO2 buffering layer on IBAD (Ion Beam Assisted Deposition)-MgO base band by using PLD (Pulsed Laser Deposition) technology
  • Method for quickly preparing simplified single CeO2 buffering layer on IBAD (Ion Beam Assisted Deposition)-MgO base band by using PLD (Pulsed Laser Deposition) technology

Examples

Experimental program
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Embodiment 1

[0040] A Rapid Preparation of Simplified Single CeO on IBAD-MgO Baseband Using PLD Technology 2 The method of buffer layer, this method comprises the following steps:

[0041] Step 1, the CeO prepared by high temperature sintering 2 The oxide target material is loaded into the target holder in the cavity of the multi-channel laser coating system;

[0042] Step 2. Wrap the IBAD-MgO base tape on the rollers in the multi-channel laser coating system;

[0043] Step 3. Close the door of the multi-channel laser coating system and evacuate to 1×10 -7 Torr, then start the heater, and raise the heater to CeO at a rate of 10°C / min. 2 The temperature value required for the buffer layer coating process, that is, 500°C;

[0044] Step 4. After the temperature stabilizes, open the oxygen channel and feed in oxygen. The flow of oxygen is controlled by the gas mass flow meter. The flow of oxygen is 10 SCCM. The gas pressure is adjusted to CeO 2 The air pressure value required for the buff...

Embodiment 2

[0051] A Rapid Preparation of Simplified Single CeO on IBAD-MgO Baseband Using PLD Technology 2 The method of buffer layer, this method comprises the following steps:

[0052] Step 1, the CeO prepared by high temperature sintering 2 The oxide target material is loaded into the target holder in the cavity of the multi-channel laser coating system;

[0053] Step 2. Wrap the IBAD-MgO base tape on the rollers in the multi-channel laser coating system;

[0054] Step 3. Close the door of the multi-channel laser coating system and evacuate to 1×10 -6 Torr, then start the heater, and raise the heater to CeO at a rate of 10°C / min. 2 The temperature value required for the buffer layer coating process, that is, 600°C;

[0055] Step 4. After the temperature stabilizes, open the oxygen channel and feed in oxygen. The flow of oxygen is controlled by the gas mass flow meter. The flow of oxygen is 15 SCCM. The gas pressure is adjusted to CeO 2 The air pressure value required for the buff...

Embodiment 3

[0062] A Rapid Preparation of Simplified Single CeO on IBAD-MgO Baseband Using PLD Technology 2 The method of buffer layer, this method comprises the following steps:

[0063] Step 1, the CeO prepared by high temperature sintering 2 The oxide target material is loaded into the target holder in the cavity of the multi-channel laser coating system;

[0064] Step 2. Wrap the IBAD-MgO base tape on the rollers in the multi-channel laser coating system;

[0065] Step 3. Close the door of the multi-channel laser coating system and evacuate to 5×10 -6 Torr, then start the heater, and raise the heater to CeO at a rate of 10°C / min. 2 The temperature value required for the buffer layer coating process, that is, 750°C;

[0066] Step 4. After the temperature stabilizes, open the oxygen channel and feed in oxygen. The flow of oxygen is controlled by the gas mass flow meter. The flow of oxygen is 15 SCCM. The gas pressure is adjusted to CeO 2 The air pressure value required for the buff...

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Abstract

The invention discloses a method for quickly preparing a simplified single CeO2 buffering layer on an IBAD (Ion Beam Assisted Deposition)-MgO base band by using a PLD (Pulsed Laser Deposition) technology. By using the method disclosed by the invention, an excellent crystallographic orientation can be acquired by not using an epitaxial homogeny MgO layer in a structure of a buffering layer with single orientation and high texture degree essential to an epitaxial growth YBCO (Yttrium Barium Copper Oxide) superconducting layer; and the simplification and low cost of a manufacturing process of the buffering layer in a preparation process of a YBCO superconducting band material are realized.

Description

technical field [0001] The present invention relates to a buffer layer for rare earth oxide high-temperature superconducting (REBCO) strips and its preparation method, especially to a rapid preparation of simplified single CeO on IBAD-MgO base strips using PLD (pulse laser deposition) technology 2 The method of the buffer layer. Background technique [0002] The chemical composition of the rare earth oxide high temperature superconductor is RE 1 Ba 2 Cu 3 o 7 (REBCO), where RE is a rare earth element other than Pr. The typical representative of rare earth oxide high temperature superconducting materials is yttrium barium copper oxide (YBa 2 Cu 3 o 7- x , referred to as YBCO) high temperature superconducting materials. Rare earth oxide high temperature superconducting tapes have high critical current density (J c ), magnetic field (J c -B) Features and low price, it is likely to replace bismuth-based high-temperature superconducting strips in the future, and be ...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/08
Inventor 李贻杰刘林飞
Owner SHANGHAI SUPERCONDUCTOR TECH CO LTD
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