Variable-cycle multi-beam interference photoetching method

Abstract

The invention relates to a variable-cycle multi-beam interference photoetching method which comprises the following steps that a laser output by a laser device is reshaped, and is split into symmetrically distributed divergent beams by a beam splitting element; after passing through a collimating lens, a plurality of divergent beams are collimated into a plurality of parallel beams parallel to an optical axis; the interval between parallel beam and the optical axis is regulated through a continuous booming and expanding lens; a focusing lens focuses each beam, and a multi-beam interference pattern is formed on a focal plane; sample sheets which are coated with photo resists are arranged on the focal plane of the focusing lens so as to achieve multi-beam interference photoetching; the continuous booming and expanding lens is regulated to change the distance from each beam to the optical axis, so that the incident angle of each beam in interference is changed, and the variable-cycle multi-beam interference photoetching is obtained; and an interference exposure field is subjected to step scanning and splicing at the x-y direction through a sheet bearing platform so as to obtain the large-scale exposure. The variable-cycle multi-beam interference photoetching method provided by the invention has the advantages of easiness in regulating of a pattern cycle, capability of achieving large-area multi-beam interference photoetching and the like, and is used for the research fields of panel display, biosensing, solar batteries and self-cleaning structures.

Description

technical field

[0001] The invention belongs to the technical field of nano-processing, and relates to a variable-period multi-beam interference photolithography method. technical background

[0002] Laser interference lithography has the advantages of high resolution, no mask, long focal depth, low cost, and high efficiency. Research fields such as anti-anti-absorption of solar cells play an important role.

[0003] The period of the laser interference lithography pattern is determined by the incident angles of the two mutually interfering beams. Therefore, in order to obtain micro-nano structures with different periods, the incident angles of the two interfering beams in the laser interference lithography system must be adjusted. For the traditional dual-arm laser interference lithography system with beam splitting by beamsplitter and beam combining by mirrors, in order to change the incident angle of the two beams, the optical paths of the two branches and the positions ...

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