Package for optical semiconductor device and manufacturing method thereof, optical semiconductor device and manufacturing method thereof
A technology of optical semiconductors and packages, which is applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of decreased production efficiency, inability to confirm poor quality in the manufacturing stage, etc., achieve high mechanical stability, improve production efficiency, and high The effect of heat dissipation
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Embodiment 1)
[0188] Lamination of 3 layers. Glass fiber is impregnated with a phenyl-based silicone resin composition (manufactured by Shin-Etsu Chemical Co., Ltd.: trade name KJR-5547) containing titanium oxide as an inorganic filler Each sheet is 70 μm, and the resin is cured to serve as a base. A 75 μm copper layer was bonded by thermocompression on the top and bottom of the base. Then, a metal coating layer in which Ni / Pd / Au plating was applied to the surface of the copper layer was formed, and two electrical connection portions were formed on the top surface of the base by an etching process.
[0189] The surface of the base was subjected to surface treatment by plasma treatment at 100W / 30 seconds, and a concave reflector structure was formed on the treated surface using a transfer mold using a silicone resin composition. Silicone-based die bonding (die bonding) material (manufactured by Shin-Etsu Chemical Co., Ltd.: trade name 632DA-1) was printed and coated on the optical semicondu...
Embodiment 2、3)
[0203] When molding the reflector structure, an epoxy resin (Example 2) or a hybrid resin of a silicone resin and an epoxy resin (Example 3) was used for transfer molding, and it was the same as Example 1. Fabrication of optical semiconductor devices.
[0204] For the optical semiconductor devices trial-manufactured in Examples 2 to 3, a 85°C / 85% high-temperature and high-humidity current conduction test was performed to confirm the fluctuation of the initial beam value at 100h, 500h, and 1,000h. The results are shown in Table 4. It can be seen that since the durability of the abutment is high, neither of the two types has a large drop of the light beam, which is relatively good.
[0205] Table 4
[0206]
[0207] Furthermore, since the optical semiconductor device packages trial-produced in Examples 1 to 3 contained a fiber reinforcing agent, they had high mechanical stability.
Embodiment 4)
[0209] Using a Cu-based base material with a thickness of 0.25 mm (Tamac 194 manufactured by Mitsubishi Shindoh Co. Ltd.), an etching process is used to form a connection between the pad and the pad, and a Ni / Pd / Au-plated metal leadframe. Using this substrate, the surface of the base was subjected to surface treatment by plasma treatment at 50 W / 60 seconds, and the treated surface was subjected to resin molding of a silicon composition using a transfer molding machine to produce a substrate having a conductive portion.
[0210] A silicone-based die-bonding material (manufactured by Shin-Etsu Chemical: trade name 632DA-1) was printed and applied to the concave portion (reflector) formed in the above-mentioned molding, and a blue LED chip (TR350M series manufactured by Cree, USA) was placed on it. Cured at 150°C for 4 hours. After that, wire bonding was performed using a 30 μm gold wire.
[0211] After that, the inner layer material mixed with yellow phosphor and silicone res...
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