Unlock instant, AI-driven research and patent intelligence for your innovation.

Memristor and manufacture method thereof

A memristor and electrode technology, which is applied in the field of microelectronic materials and semiconductor devices, can solve the problems of poor repeatability, interface pollution, and high manufacturing cost of memristors

Inactive Publication Date: 2013-08-14
HUAZHONG UNIV OF SCI & TECH
View PDF1 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cumbersome process and excessive chemicals can easily cause damage to the film and contamination of the interface, resulting in poor process controllability and low device repeatability
[0004] The development of a more optimized device structure and simple and effective preparation process technology is the primary problem to solve the high production cost of existing memristors, complex process steps and poor repeatability, in order to meet the urgent needs of mass production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memristor and manufacture method thereof
  • Memristor and manufacture method thereof
  • Memristor and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] Such as figure 2 Shown, the preparation method of memristor of the present invention, its steps are as follows:

[0034] 1) On Si / SiO 2 The pattern of the lower electrode guide layer is fabricated on the insulating substrate 16 / 15, specifically by photolithography, electron beam lithography, nanoimprinting, EUV lithography and other methods. Taking the photolithography method as an example, the photoresist is first spin-coated on the substrate, and the lower electrode guide layer pattern is obtained through pre-baking, exposure, post-baking and development by using the properties of the photoresist. The photoresist can be selected from positive resist, reverse resist and reverse resist, preferably reverse resist (such as AZ5214);

[0035] 2) Deposit the lower electrode metal conductive film on the substrate with the lower electrode guide layer pattern, and form the lower conductive guide layer 14 by stripping or etching process; the deposited film can be deposited by...

Embodiment 1

[0040] Embodiment 1: the upper conductive electrode material is W, and the thickness is 50nm; the lower conductive electrode material is Cu, and the thickness is 100nm; the lower electrode guide layer material is Ta, and the thickness is 200nm; the functional material is Cu 2 S, with a thickness of 10 nm.

Embodiment 2

[0041] Embodiment 2: The upper conductive electrode material is Cu, and the thickness is 200nm; The lower conductive electrode material is Ag, and the thickness is 50nm, and the lower electrode guiding layer material is Cu, and the thickness is 400nm; The functional material is Ge 2 Sb 2 Te 5 , with a thickness of 200nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a memristor and a manufacture method thereof and belongs to the field of microelectronic materials and semiconductor devices. The memristor sequentially comprises an upper electrode, a storage medium layer, a lower electrode and a lower electrode guide layer from top to bottom, and the lower electrode guide layer with good electrical conductivity serves the function of directly leading out the lower electrode. The manufacture method of the memristor comprises the steps as follows: firstly, the lower electrode guide layer is prepared, and then the lower electrode and the storage medium layer are deposited on the lower electrode guide layer in the same deposition process, and as a result, process steps including cleaning, photoetching and the like of the preparation of two layers of films are avoided, and the interfaces of the storage medium layer and the lower electrode are protected. The manufacture method of the memristor solves the manufacture problems of the conventional memristor, such as high manufacture cost, and complexity and poor repeatability of process steps, and satisfies the demand for mass production.

Description

technical field [0001] The invention belongs to the field of microelectronic materials and semiconductor devices, and in particular relates to a memristor and a preparation method thereof. Background technique [0002] Memristor is a new type of two-terminal passive electronic components other than resistors, capacitors, and inductors. It has potential advantages in terms of integration, power consumption, speed, and reliability, and can meet the needs of new electronic storage materials and devices. The development trend of large capacity and low power consumption can replace flash memory (flash), dynamic random access memory (DRAM), static random access memory (SRAM), and become the next generation of high-speed non-volatile memory. The charge memory characteristic of memristor is very similar to the learning function of biological neuron synapse, and it is an ideal electronic device for realizing cognitive storage and artificial intelligence. [0003] In 1971, Professor ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 孙华军王青张金箭缪向水
Owner HUAZHONG UNIV OF SCI & TECH