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Sapphire substrate ultraprecision machining method based on fixed abrasive pad

A sapphire substrate, ultra-precision machining technology, applied in grinding tools, metal processing equipment, grinding devices, etc., can solve the problems of difficult to guarantee accuracy, low processing efficiency, and large environmental pollution, and achieve high processing efficiency and utilization rate. High, high surface quality effect

Active Publication Date: 2013-08-21
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention aims at the problems that the existing sapphire substrate processing is carried out by using ordinary polishing pads, resulting in low processing efficiency, high cost, difficulty in ensuring accuracy, and large environmental pollution. Pad for sapphire finishing method, making full use of the diamond particles of the bonded abrasive has the advantages of fast cutting speed and high precision, improves processing efficiency, reduces sub-surface damage, and improves surface quality

Method used

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  • Sapphire substrate ultraprecision machining method based on fixed abrasive pad
  • Sapphire substrate ultraprecision machining method based on fixed abrasive pad

Examples

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Effect test

example 1

[0034] Set the laboratory temperature at 15°C and keep the laboratory at a constant temperature. W75 (grain size 60-75 microns) and W28 (grain size 20-28 microns) nickel-plated diamond abrasives and W5 used for rough grinding, fine grinding and polishing (The particle size is 3.5-5 microns) The fixed abrasive grinding and polishing pad of diamond (not nickel-plated) is pasted on three polishing discs respectively, and is installed on the polishing equipment, and the fixed abrasive grinding and polishing pad is trimmed before the experiment, so as to Ensure that the diamonds on the surface of the fixed abrasive polishing pad are exposed. The fixed abrasive grinding and polishing pad is prepared by uniformly mixing and solidifying resin and diamond abrasive, in which nickel-plated diamond is a layer of nickel oxide electroplated on the surface of diamond powder particles (the same below). The quality of nickel-plated diamond should be guaranteed to increase to 110%~200% of the o...

example 2

[0040] Set the laboratory temperature at 25°C and keep the laboratory at a constant temperature. W75 (grain size 60-75 microns) and W28 (grain size 20-28 microns) nickel-plated diamond abrasives and W5 used for rough grinding, fine grinding and polishing (with a particle size of 3.5-5 microns) diamond (non-nickel-plated) fixed abrasive polishing pads were respectively pasted on three polishing discs. Before the experiment, the fixed abrasive grinding and polishing pads were trimmed to ensure that the diamonds on the surface of the polishing pads were exposed. .

[0041] The pressure during rough grinding is 0.3Mpa, the flow rate of the polishing liquid is 300ml / min, the rotational speed of the workbench is 100r / min, and the rough grinding time is 6min. The content of each component of the polishing liquid during rough grinding is expressed as follows: , the highest volume fraction A of deionized water in the polishing liquid is 90%, the highest volume fraction B of triethanol...

example 3

[0046] Set the laboratory temperature at 30°C and keep the laboratory at a constant temperature. W75 (grain size 60-75 microns) and W28 (grain size 20-28 microns) nickel-plated diamond abrasives and W5 used for rough grinding, fine grinding and polishing (with a particle size of 3.5-5 microns) diamond (non-nickel-plated) fixed abrasive polishing pads were respectively pasted on three polishing discs. Before the experiment, the fixed abrasive grinding and polishing pads were trimmed to ensure that the diamonds on the surface of the polishing pads were exposed. .

[0047] The pressure during rough grinding is 0.2Mpa, the flow rate of polishing liquid is 250ml / min, the rotational speed of the workbench is 125r / min, and the rough grinding time is 7min. The content of each component of the polishing liquid during rough grinding is expressed as follows: , the highest volume fraction A of deionized water in the polishing liquid is 90%, the highest volume fraction B of triethanolamin...

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Abstract

The invention discloses a sapphire substrate ultra-precision machining method based on a fixed abrasive pad. The sapphire substrate ultra-precision machining method based on the fixed abrasive pad mainly relates to three steps of rough grinding, accurate grinding and polishing, namely, rough grinding is conducted on a cut sapphire substrate semi-finished product through a W75 nickel plated diamond FAP; then accurate grinding is conducted on a workpiece after rough grinding through a W28 nickel plated diamond FAP; last, polishing is conducted on the workpiece after accurate grind through a W5 diamond FAP, and grinding and polishing processes are finished. According to the sapphire substrate ultra-precision machining method based on the fixed abrasive pad, a sapphire substrate is machined, the time cost in the whole process is shortened within two hours, machining time of sapphire is greatly shortened, the sapphire substrate with the workpiece surface roughness (Ra) is smaller than 3nm can be finally obtained, surface defects such as pitting corrosion and scratches can be effectively removed, the damage of a subsurface is reduced and the quality of the surface is good. The sapphire substrate ultra-precision machining method based on the fixed abrasive pad improves machining efficiency of the substrate and the quality of the surface of the substrate, and is low in cost and pollution-free.

Description

technical field [0001] The present invention relates to an ultra-precision machining method for sapphire substrates, especially a method for processing sapphire substrates using a fixed abrasive polishing pad, specifically, a sapphire lining based on a fixed abrasive polishing pad The ultra-precision machining method of the bottom. Background technique [0002] Sapphire has the characteristics of high hardness, high melting point, good light transmission, excellent thermal conductivity and electrical insulation, and stable chemical properties. It is widely used in national defense, aerospace, scientific research, industry, life and other fields, such as infrared light-transmitting materials , laser windows and mirrors, precision instruments, epitaxial substrates of semiconductor silicon, integrated chips of insulating substrates, etc. The surface quality of sapphire plays a key role in the quality, luminous efficiency and life of the device. Therefore, the processing requir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04B24B37/24
Inventor 李军李鹏鹏王建彬朱永伟左敦稳夏磊王文泽王慧敏
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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