A kind of preparation method of bismuth-containing semiconductor laser of 1300nm~1550nm

Abstract

The invention discloses a 1300nm-1550nm semiconductor laser unit containing bismuthide. The 1300nm-1500nm semiconductor laser unit containing bismuthide comprises a transitional layer, a lower limiting layer, a lower waveguide layer, an active area, an upper waveguide layer, an electron barrier layer, an upper limiting layer and an ohmic contacting layer all of which are connected sequentially. The active area adopts a strained quantum well made of a GaNAsBi / GaAs material system. The P-type AlGaAs electron barrier layer is placed between the P-type AlGaAs upper waveguide layer and the P-type AlGaAs or GaInP upper limiting layer, and the N-type AlGaAs transitional layer is placed between a GaAs substrate and the N-type AlGaAs or GaInP lower limiting layer. A semiconductor laser epitaxy structure grows on the GaAs substrate, the production cost of the semiconductor laser epitaxy structure is less than that of an InP substrate laser, has high feature temperature, can effectively keep a current carrier from overflowing the active area, and can be popularized to a vertical cavity surface emitting laser and other types of lasers.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor optoelectronics, in particular to a 1300nm-1550nm bismuth-containing semiconductor laser and a preparation method thereof. 【Background technique】 [0002] Modern telephone and data networks rely on silicon optical fibers to carry data over the fibers that link the sending and receiving ends. Since silicon optical fiber transmits optical signals in the optical band centered on 1300nm-1550nm, especially 1310nm, it can greatly overcome the dispersion limitation. Therefore, the best working band for the existing local area switching access optical fiber network is at 1310nm. The biggest difficulty encountered in the development of optical fiber communication system lies in the light source. International standards for communication loop networks establish stringent technical parameters for laser diodes or other equivalent light emitting components. These parameters include: the threshold current, at w...

AI Technical Summary

Problems solved by technology

So far, for the InGaNAs / GaAs material system, it is still difficult to increase the N content to 10%, and doping N atoms is easy to introduce defects, so the laser based on this material system is still in the basic stage

For the InAlGaAs / InP material system, it is well known that the higher oxidation rate of Al atoms will not only increase the difficulty of the growth process, but also bring about a higher non-radiative recombination rate, resulting in deterioration of laser performance

Therefore, the lifetime and reliability of lasers containing Al in the active area are inferior to those of lasers without Al in the active area

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