Intelligent power module for three-phase bridge type driving

A technology of intelligent power module and drive module, which is applied in the direction of output power conversion devices, electrical components, electric solid devices, etc., can solve the problems of complex process, large heat generation of power devices, and susceptibility to signal interference.

Active Publication Date: 2013-09-04
NINGBO SEMICON INT CORP
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In existing applications, a three-phase bridge drive intelligent power module usually uses a power module integration method to integrate a single gate drive chip and six power devices (including six freewheeling diodes) into one module. , on the one hand, in the manufacture of intelligent power module devices, due to the large area of ​​the six power devices and the large heat generated by the power devices during operation, it is often required that the distance between each power device be large during assembly, and the grid Compared with the area of ​​the power device, the area of ​​the pole driver chip is often very small, so the metal connecting wires from the gate driver chip to each power device will be very long, and a PCB with high thermal conductivity needs to be added for packaging. At the same time, due to the long metal connecting wires connecting the output end of the gate drive chip to the power device, it is susceptible to signal interference, which greatly reduces the reliability of the intelligent power module, which is not conducive to production and reliability control; on the other hand, the gate The manufacturing cost of the electrode driver chip is affected by the process manufacturing technology. Since the gate driver chip needs t

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Intelligent power module for three-phase bridge type driving
  • Intelligent power module for three-phase bridge type driving
  • Intelligent power module for three-phase bridge type driving

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] An intelligent power module for three-phase bridge drive proposed in this embodiment, its circuit schematic diagram is as follows figure 2 As shown, it mainly includes a gate drive chip, three high-voltage side power devices 20, 30, 40, three low-voltage side power devices 50, 60, 70 and six freewheeling diodes 161, 162, 163, 164, 165, 166. For some power devices, if the freewheeling diode is integrated inside the power device, the freewheeling diode in this scheme is no longer needed. The gate drive chip is mainly composed of a high-voltage side control drive chip 180 produced by a high-voltage isolation manufacturing process and a low-voltage side control drive chip 120 produced by a CMOS process. The high-voltage side control drive chip 180 is mainly composed of a high-voltage side drive module with three inputs and outputs. 181 is integrated with a three-way input-output level shift module 182. The low-voltage side control driver chip 120 is mainly integrated by a ...

Embodiment 2

[0043] An intelligent power module for three-phase bridge drive proposed in this embodiment, its circuit schematic diagram is as follows image 3 As shown, the difference from Embodiment 1 is that the level shifting module is integrated separately, and the three circuits of the high-voltage side driving module are separately integrated.

[0044] The intelligent power module of this embodiment mainly includes a gate drive chip, three high-voltage side power devices 20, 30, 40, three low-voltage side power devices 50, 60, 70, and six freewheeling diodes 161, 162, 163, 164 , 165, 166, for some power devices, if the freewheeling diode is integrated inside, the freewheeling diode in this embodiment is no longer needed. The gate drive chip is mainly composed of a level shift chip 110 produced by a high-voltage isolation manufacturing process, three high-voltage side control drive chips 80, 90, and 100 produced by a CMOS process, and a low-voltage side control drive chip 120. The lev...

Embodiment 3

[0050] An intelligent power module for three-phase bridge drive proposed in this embodiment, its circuit schematic diagram is as follows Figure 4 As shown, the difference between it and the intelligent power module given in Embodiment 2 is that the three-way level shift chip is divided into three one-way level shift chips.

[0051] The intelligent power module of this embodiment mainly includes a gate drive chip, three high-voltage side power devices 20, 30, 40, three low-voltage side power devices 50, 60, 70, and six freewheeling diodes 161, 162, 163, 164 , 165, 166, for some power devices, if a freewheeling diode is integrated inside, the freewheeling diode in this embodiment is no longer needed. The gate drive chip is mainly composed of three level shift chips 130, 140, 150 produced by high-voltage isolation manufacturing process, three high-voltage side control drive chips 80, 90, 100 produced by CMOS process, and one low-voltage side control drive chip 120 Each level sh...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an intelligent power module for three-phase bridge type driving. The intelligent power module is realized by segmenting a common integrated chip of a high-voltage side driving module, a level transfer module and a low-voltage side driving module again and dividing the integrated chip into a level transfer chip, a high-voltage side control driving chip and a low-voltage side control driving chip. Only the level transfer chip is produced by a complex high-voltage insulation manufacture technology. The high-voltage side control driving chip and the low-voltage side control driving chip are produced by a common CMOS (Complementary Metal-Oxide-Semiconductor Transistor) technology. The trouble of integrating the high-voltage insulation manufacture technology in the common CMOS technology to produce all the chips and then encapsulating all the chips, power devices and a free-wheel diode together is saved in the production of the intelligent power module for three-phase bridge type driving. The more easily controlled process for producing the level transfer chip of the intelligent power module is favorable to the increase of the qualified rate. The areas of the high-voltage side control driving chip and the low-voltage side control driving chip can be further reduced, and the production qualified rate can be ensured.

Description

[0001] This application is a divisional application of the original application number 201110203093.4 for a patent application for invention. Its application date is July 20, 2011. The title of the invention is "an intelligent power module for three-phase bridge drive". technical field [0002] The invention relates to an intelligent power module in motor drive, in particular to an intelligent power module for three-phase bridge drive. Background technique [0003] The intelligent power module is a commonly used module in the field of motor drive. The bridge driver chip in the intelligent power module is generally a half-bridge driver chip, a full-bridge driver chip or a three-phase bridge driver chip. Two half-bridge driver chips can be combined A full-bridge driver chip can be formed, and three half-bridge driver chips can be combined into a three-phase bridge driver chip. Among them, the three-phase bridge drive chip is often used in frequency conversion products of three...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H02M1/088H01L25/16
CPCH01L2924/0002H01L2924/00
Inventor 胡同灿
Owner NINGBO SEMICON INT CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products