Intelligent power module for three-phase bridge type driving

Abstract

The invention discloses an intelligent power module for three-phase bridge type driving. The intelligent power module is realized by segmenting a common integrated chip of a high-voltage side driving module, a level transfer module and a low-voltage side driving module again and dividing the integrated chip into a level transfer chip, a high-voltage side control driving chip and a low-voltage side control driving chip. Only the level transfer chip is produced by a complex high-voltage insulation manufacture technology. The high-voltage side control driving chip and the low-voltage side control driving chip are produced by a common CMOS (Complementary Metal-Oxide-Semiconductor Transistor) technology. The trouble of integrating the high-voltage insulation manufacture technology in the common CMOS technology to produce all the chips and then encapsulating all the chips, power devices and a free-wheel diode together is saved in the production of the intelligent power module for three-phase bridge type driving. The more easily controlled process for producing the level transfer chip of the intelligent power module is favorable to the increase of the qualified rate. The areas of the high-voltage side control driving chip and the low-voltage side control driving chip can be further reduced, and the production qualified rate can be ensured.

Description

[0001] This application is a divisional application of the original application number 201110203093.4 for a patent application for invention. Its application date is July 20, 2011. The title of the invention is "an intelligent power module for three-phase bridge drive". technical field [0002] The invention relates to an intelligent power module in motor drive, in particular to an intelligent power module for three-phase bridge drive. Background technique [0003] The intelligent power module is a commonly used module in the field of motor drive. The bridge driver chip in the intelligent power module is generally a half-bridge driver chip, a full-bridge driver chip or a three-phase bridge driver chip. Two half-bridge driver chips can be combined A full-bridge driver chip can be formed, and three half-bridge driver chips can be combined into a three-phase bridge driver chip. Among them, the three-phase bridge drive chip is often used in frequency conversion products of three...

AI Technical Summary

Problems solved by technology

[0004] In existing applications, a three-phase bridge drive intelligent power module usually uses a power module integration method to integrate a single gate drive chip and six power devices (including six freewheeling diodes) into one module. , on the one hand, in the manufacture of intelligent power module devices, due to the large area of ​​the six power devices and the large heat generated by the power devices during operation, it is often required that the distance between each power device be large during assembly, and the grid Compared with the area of ​​the power device, the area of ​​the pole driver chip is often very small, so the metal connecting wires from the gate driver chip to each power device will be very long, and a PCB with high thermal conductivity needs to be added for packaging. At the same time, due to the long metal connecting wires connecting the output end of the gate drive chip to the power device, it is susceptible to signal interference, which greatly reduces the reliability of the intelligent power module, which is not conducive to production and reliability control; on the other hand, the gate The manufacturing cost of the electrode driver chip is affected by the process manufacturing technology. Since the gate driver chip needs to work under high voltage conditions, when manufacturing the gate driver chip, it is necessary to integrate the high-voltage isolation manufacturing process into the ordinary CMOS process for production. The purpose of using the high-voltage isolation manufacturing process is to isolate the high-voltage side driver module from the low-voltage side driver module. Due to the complexity of the common CMOS process integrated high-voltage isolation manufacturing process, this process can achieve a large feature size in order to withstand high voltage. Originally, only Parts that require small feature sizes must also use large feature sizes, which makes the gate drive chip manufactured have a larger feature size, resulting in a gate drive chip with the same function occupying too much area and increasing the cost of a single gate drive chip. Production cost; In addition, due to the large area of ​​the gate drive chip realized by the single-chip integration method, it is not conducive to designing a chip with complex functions, such as wanting to integrate more protection circuits or detection functions. Using a gate driver chip to design a complex chip will require a larger area, while the production yield will also decrease, and the production cost will also increase.

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