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Method for preparing crystalline-silicon heterojunction solar cell

A solar cell and heterojunction technology, applied in the field of solar energy, can solve the problems of affecting the quality of amorphous silicon film, the effect cannot be guaranteed, and the yield rate is reduced, so as to improve the passivation effect, reduce the leakage current, and reduce the cost of chemical cleaning. required effect

Active Publication Date: 2013-09-18
CSI CELLS CO LTD
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Problems solved by technology

However, this method not only leads to increased costs, lengthy procedures, and the effect cannot be guaranteed, but also creates environmental problems such as waste liquid treatment.
In addition, in the process of constructing heterojunction by PECVD deposition method, it is easy to cause tip discharge, which affects the quality of amorphous silicon film and greatly reduces the yield rate

Method used

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Embodiment 1

[0049] A method for preparing a crystalline silicon heterojunction solar cell, comprising the steps of:

[0050] The first step is to chemically clean the N-type monocrystalline silicon wafer;

[0051] The second step is to corrode the above-mentioned silicon chip and form a micron-scale pyramid texture structure on the front and back sides;

[0052] When forming the pyramid suede structure, the suede treatment means such as alkaline corrosion is usually used for smooth and rounding treatment, so as to achieve the purpose of removing burrs and peaks;

[0053]The third step is to use ion implantation method to implant Si ions and B ions successively on the front and back of the silicon wafer, so as to form intrinsic amorphous silicon films with a thickness of 20-30 nm on the upper and lower surfaces of the silicon wafer;

[0054] The fourth step is to use the plasma etching back process to etch back the intrinsic amorphous silicon thin film on the front and back sides of the s...

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Abstract

The invention discloses a method for preparing a crystalline-silicon heterojunction solar cell. The method comprises the following steps of (1) cleaning and carrying out corrosive texturing; (2) implanting Si ions and B ions to the front face of a silicon wafer, forming an intrinsic amorphous silicon film on the front face, implanting Si ions and B ions to the back face of the silicon wafer, and forming an intrinsic amorphous silicon film on the back face; (3) re-etching the intrinsic amorphous silicon films on the front and back faces of the silicon wafer; (4) depositing a p-type doped amorphous silicon film layer on the front face of the silicon wafer; (5) depositing an n-type heavily-doped amorphous silicon film layer on the back face of the silicon wafer; (6) arranging transparent conductive film layers on the front and back faces of the silicon wafer; and (7) carrying out silk-screen printing, and sintering so as to prepare metallic electrodes on the surfaces of the silicon wafer. The method has the advantages that the high-quality crystalline-silicon heterojunction solar cell is obtained, high-quality amorphous silicon film layers and an integrated crystalline-silicon and amorphous-silicon heterojunction superimposed interface with minimal defects are formed, the passivation effect is improved, and the leakage current is lowered effectively.

Description

technical field [0001] The invention relates to a preparation method of a crystalline silicon heterojunction solar cell, which belongs to the technical field of solar energy. Background technique [0002] With the wide application of solar cell components, photovoltaic power generation occupies an increasingly important proportion in new energy and has achieved rapid development. Among the current commercialized solar cell products, crystalline silicon (monocrystalline and polycrystalline) solar cells have the largest market share, maintaining a market share of more than 85%. Therefore, the development of cost-effective crystalline silicon solar cells is still one of the research and development directions of researchers from various countries. [0003] Currently, Sanyo Corporation of Japan has produced a crystalline silicon heterojunction solar cell. The so-called heterojunction means that the PN junction on the front of the battery is composed of amorphous silicon and N-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/20
CPCY02P70/50
Inventor 熊光涌王栩生章灵军
Owner CSI CELLS CO LTD
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