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Transparent resistive random access memory and production method thereof

A resistive memory, transparent technology, applied in electrical components and other directions, can solve the problem of low light transmittance and achieve the effect of good light transmittance

Active Publication Date: 2015-07-01
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although there are some transparent storage devices at present, the light transmittance of these memories is low, the highest is only about 80%. People hope to develop transparent storage devices with better light transmission performance to meet the needs of continuous technological development.

Method used

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  • Transparent resistive random access memory and production method thereof
  • Transparent resistive random access memory and production method thereof
  • Transparent resistive random access memory and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] a) Material pretreatment: put the quartz glass substrate in acetone and ultrasonically clean it for 10 minutes, then put it in alcohol and clean it with ultrasonic wave for 10 minutes, and finally put it into deionized water and clean it with ultrasonic wave for 5 minutes, and set it aside.

[0029] In the growth chamber of the film-making system for radio frequency magnetron sputtering, the processed quartz glass substrate is fixed on the substrate table, and the indium gallium zinc oxide target (chemical formula is InGaZnO 4 , abbreviated as α‐IGZO; purity 99.99%) and zirconium hafnium oxide target (chemical formula Zr 0.5 f 0.5 o 2 ; purity 99.99%) were fixed on the target stage.

[0030] b) Evacuate the growth chamber to 2.0 × 10 ‐4 Pa, then pass in argon gas (flow rate is 50 sccm), start the RF transmitter to make the growth chamber ignite and adjust the air pressure to stabilize at 0.5Pa, then start the substrate heating device to heat the substrate and keep it...

Embodiment 2

[0038] a) Material pretreatment: Put the polyimide (PI) substrate into acetone and use ultrasonic cleaning for 10 minutes, then put it into alcohol and use ultrasonic cleaning for 10 minutes, and finally put it into deionized water and use ultrasonic cleaning for 5 minutes, and set it aside.

[0039] In the growth chamber of the film-making system for radio frequency magnetron sputtering, the processed polyimide substrate is fixed on the substrate table, and the indium gallium zinc oxide target (chemical formula is InGaZnO 4 , abbreviated as α‐IGZO; purity 99.99%) and zirconium hafnium oxide target (chemical formula Zr0.1 f 0.9 o 2 ; purity 99.99%) were fixed on the target stage.

[0040] b) Evacuate the growth chamber to 2.0 × 10 ‐4 Pa, then pass in argon gas (the flow rate is 50sccm), start the radio frequency transmitter to make the growth chamber glow and then adjust the air pressure to stabilize at 0.5Pa, then start the substrate heating device to heat the substrate and...

Embodiment 3

[0045] a) Material pretreatment: Put the polyethylene (PES) substrate into acetone and use ultrasonic cleaning for 10 minutes, then put it into alcohol and use ultrasonic cleaning for 10 minutes, and finally put it into deionized water and use ultrasonic cleaning for 5 minutes, and set aside.

[0046] In the growth chamber of the film-making system for radio frequency magnetron sputtering, the processed polyethylene substrate is fixed on the substrate table, and the indium gallium zinc oxide target (chemical formula is InGaZnO 4 , abbreviated as α‐IGZO; purity 99.99%) and zirconium hafnium oxide target (chemical formula Zr 0.9 f 0.1 o 2 ; purity 99.99%) were fixed on the target stage.

[0047] b) Evacuate the growth chamber to 2.0 × 10 ‐4 Pa, then pass in argon (flow rate: 50 sccm), start the RF transmitter to make the growth chamber ignite and adjust the air pressure to stabilize at 0.5 Pa, then start the substrate heating device to heat the substrate and keep it at 100°C;...

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Abstract

The invention discloses a transparent resistive random access memory. A lower electrode layer, a variable resistance layer and an upper electrode layer are integrated on a transparent substrate in sequence, wherein the lower and upper electrode layers are amorphous indium gallium zinc oxide films, and the variable resistance layer is an amorphous zirconium hafnium oxide film, an amorphous zirconia film or an amorphous hafnium oxide film. The invention further provides a preparation method of the transparent resistive random access memory, wherein a radio frequency magnetron sputtering method is adopted to sequentially deposit the lower electrode layer, the variable resistance layer and the upper electrode layer on the transparent substrate. The transparent resistive random access memory provided by the invention has good transparency, and the light transmittance of the memory in a visible light waveband scope is above 76% and can reach about 92% to the maximum extent.

Description

technical field [0001] The invention relates to a resistive variable memory, in particular to a transparent resistive variable memory and a preparation method thereof. Background technique [0002] With the continuous advancement of integrated circuit technology, the traditional Flash non-volatile memory can no longer meet the needs. In recent years, a variety of new non-volatile memories have emerged, such as ferroelectric memory (FRAM), magnetic memory (MRAM), phase change memory ( PRAM) and resistive RAM (RRAM). Among them, the working principle of the resistive variable memory is to realize the inversion of the high-resistance state and the low-resistance state through the voltage pulse signal. This inversion is reversible and is used to simulate "0" and "1" in the logic circuit. The resistive variable memory is generally integrated on the substrate, which is a sandwich structure formed by electrode layer / resistive variable layer / electrode layer, and works through the r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 闫小兵张二鹏娄建忠刘保亭
Owner HEBEI UNIVERSITY