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Quantum dot-modified ZnO nanorod array electrode and preparation method thereof

A nanorod array and quantum dot technology, applied in nanotechnology, nanotechnology, cable/conductor manufacturing, etc., can solve the problems of low utilization of sunlight and low photocatalytic efficiency, and achieve improved photocatalytic efficiency, high activity, The effect of high photocurrent response speed

Active Publication Date: 2013-11-20
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the technical problems of low photocatalytic efficiency of ZnO nanomaterials under visible light and low utilization rate of sunlight, and provide a quantum dot modified ZnO nanorod array electrode and its preparation method

Method used

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  • Quantum dot-modified ZnO nanorod array electrode and preparation method thereof
  • Quantum dot-modified ZnO nanorod array electrode and preparation method thereof
  • Quantum dot-modified ZnO nanorod array electrode and preparation method thereof

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specific Embodiment approach 1

[0044] Specific embodiment 1: A quantum dot modified ZnO nanorod array electrode of this embodiment includes a substrate, a ZnO nanorod array and a quantum dot coating layer; wherein, the substrate is a conductive substrate, and the ZnO nanorod array is It is made of zinc nitrate hexahydrate with a concentration of 0.08~0.12M and hexamethylenetetramine with a concentration of 0.08~0.12M. The volume ratio of the zinc nitrate hexahydrate and hexamethylenetetramine is 1: 1. The quantum dot coating layer is alternately coated by a cationic polyelectrolyte-cobalt-phenanthroline layer and a quantum dot nanoparticle layer, and the cationic polyelectrolyte-cobalt-phenanthroline layer is coated on ZnO On the nanorod array, the quantum dot nanoparticle layer is coated on the cationic polyelectrolyte-phenanthroline cobalt layer, wherein the quantum dot nanoparticle layer is a CdTe nanoparticle layer, a CdS nanoparticle layer or a CdSe nanoparticle layer .

[0045] The absorption of the qua...

specific Embodiment approach 2

[0046] Specific embodiment two: this embodiment is different from specific embodiment one in that the conductive substrate is ITO or FTO. Others are the same as the first embodiment.

specific Embodiment approach 3

[0047] Specific embodiment three: this embodiment is different from specific embodiment one or two in that: the preparation method of the cationic polyelectrolyte-cobalt-phenanthroline layer is as follows: ZnO nanorod array is immersed in pH 6.2-8.5 After 5-20 minutes of cationic polyelectrolyte-cobalt-phenanthroline solution, take it out and rinse with deionized water, blow dry, and it is complete;

[0048] Wherein, the cationic polyelectrolyte-cobalt-phenanthroline solution is composed of cobalt-phenanthroline with a concentration of 0.5-2 mg / mL and a cationic polyelectrolyte with a concentration of 0.2-1 mg / mL; wherein, the The cationic polyelectrolyte in the cobalt-phenanthroline layer is polyethyleneimine, polyacrylamine hydrochloride or polydimethyldiallylammonium chloride. Others are the same as the first or second embodiment.

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Abstract

The invention relates to a quantum dot-modified ZnO nanorod array electrode and a preparation method thereof, and relates to an array electrode and a preparation method thereof. With the adoption of the quantum dot-modified ZnO nanorod array electrode and the preparation method thereof, the technical problems that the photocatalytic efficiency of ZnO nano materials is low under visible light, and the utilization rate of the sunlight is low are solved. The preparation method comprises the following steps: 1, taking conductive glass as a substrate, and preparing a highly ordered ZnO nanorod array by adopting a hydrothermal method; and 2, alternately depositing polyelectrolyte and quantum dot particles on the surface of the ZnO nanorod array, so as to obtain the uniform coated quantum dot-modified ZnO nanorod array electrode. With the adoption of the method for preparing photoelectrodes, the length of the ZnO nanorod array and the thickness of the coated quantum dot can be controlled; and the electrode prepared by the method provided by the invention exhibits good photoelectrocatalytic activity and visible-light response characteristics under irradiation of the visible light. The quantum dot-modified ZnO nanorod array electrode and the preparation method thereof are used in the fields of photoelectrocatalytic degradation of environmental pollutants, photoelectrocatalytic synthesis and water photolysis for hydrogen generation.

Description

Technical field [0001] The invention relates to an array electrode and a preparation method thereof. Background technique [0002] Zinc oxide (ZnO) is an important direct wide band gap semiconductor material with excellent piezoelectric, pyroelectric and photoelectric properties. ZnO nanorods are used in fields such as field emission, gas sensors, solar cells, field effect transistors, and electroluminescence devices. The application has aroused widespread research interest. [0003] Because ZnO nanomaterials can only absorb and scatter ultraviolet rays, and ultraviolet rays only account for 5-6% of sunlight, the photocatalytic efficiency of photovoltaic devices based on ZnO nanomaterials is low, and the utilization rate of sunlight is low. [0004] Layer-by-Layer Self-assembly (LbL) method is also called ion self-assembly, which refers to nanoparticles or nanoparticle compounds with positive (negative) charge and negative (positive) charge ions , Supramolecules, biomolecules, nano...

Claims

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Application Information

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IPC IPC(8): H01G9/20H01G9/042H01B5/00H01B13/00B82Y30/00B82Y40/00
Inventor 刘丹青刘绍琴杨彬
Owner HARBIN INST OF TECH
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