Conducting film combined by graphene and metal nanowires, preparing method thereof and application for preparing transparent conducting film

A technology of metal nanowires and composite conductive films, applied in the direction of metal/alloy conductors, conductive layers on insulating carriers, conductive materials dispersed in non-conductive inorganic materials, etc., can solve the problems of unsatisfactory practical application and high price and cost

Inactive Publication Date: 2013-12-04
SHANGHAI INST OF ORGANIC CHEM CHINESE ACAD OF SCI
View PDF10 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Ag itself is also a precious metal with high price and cost
And cheaper Cu nanowire transparent conductive film, when the 550nm light transmittance is 80%, the surface sheet resistance is 50-100Ω / □ or higher (Benjamin J.Wiley, et al.Adv.Mater.2010,22 ,3558; Adv.Mater.2011,23,4798.), can not meet the practical application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Conducting film combined by graphene and metal nanowires, preparing method thereof and application for preparing transparent conducting film
  • Conducting film combined by graphene and metal nanowires, preparing method thereof and application for preparing transparent conducting film
  • Conducting film combined by graphene and metal nanowires, preparing method thereof and application for preparing transparent conducting film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] According to the literature (Byeong-Su Kim, et al. ACS Nano 2010, 4, 3861.), graphene was prepared by redox method of graphite, and it was made into 0.0004 mg / mL graphene aqueous dispersion. Copper nanowires were prepared according to literature (Benjamin J.Wiley, et al.Adv.Mater.2010,22,3558; Adv.Mater.2011,23,4798.), and dispersed in 3wt% hydrazine hydrate solution, the concentration 0.01mg / mL.

[0027] Take 250 mL of the above graphene solution (0.0004 mg / mL), add 2 mL of the above copper nanowire hydrazine hydrate dispersion (0.01 mg / mL) into it, and ultrasonically 10 min to fully mix the two. After filtering through an alumina membrane with a pore size of 0.22 μm and a diameter of 47 mm, a graphene / copper nanowire composite conductive film supported by an alumina membrane is obtained, and the weight ratio of graphene and copper nanowires contained therein is 1:0.2.

Embodiment 2

[0029] Take 125mL of the same graphene solution (0.0004mg / mL) in Example 1, add 1mL of the same copper nanowire hydrazine hydrate dispersion (0.01mg / mL) in Example 1, and ultrasonically 10min to make the two fully mix . After passing through a polycarbonate membrane with a pore size of 0.22 μm and a diameter of 25 mm, a graphene / copper nanowire composite conductive film supported by a polycarbonate membrane is obtained, wherein the weight ratio of graphene and copper nanowires is 1:0.2.

Embodiment 3

[0031] The preparation method is basically the same as in Example 2, except that the filter membrane adopts a polytetrafluoroethylene membrane with a pore size of 0.22 μm and a diameter of 25 mm. After ultrasonic compounding, filtration and washing, a graphene / copper nanowire composite conductive film supported by a polytetrafluoroethylene membrane is obtained, wherein the weight ratio of graphene and copper nanowires is 1:0.2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
pore sizeaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

A composite conductive film formed by graphene and metal nanowires, a manufacturing method thereof, and an application thereof for manufacturing a transparent conductive film. A composite conductive film formed by graphene and metal nanowires or by a material containing graphene and metal nanowires, a manufacturing method thereof, and an application thereof are provided. The obtained composite conductive film can be used for manufacturing a series of composite material products, for example, a transparent conductive film having excellent performances. The composite conductive film has a simple manufacturing process, low cost and wide application range.

Description

technical field [0001] The invention relates to a composite conductive film that can be used to prepare a transparent conductive film, a preparation method and an application for preparing a transparent conductive film. Background technique [0002] Transparent conductive film is a kind of film material with dual functions of transparency and conductivity. It is widely used in the field of optoelectronic devices, such as flat panel displays, light-emitting diodes, touch control screens, low-emission windows, and thin-film solar cells. At present, commercialized transparent conductive films are mainly based on indium tin oxide (ITO) materials, which are deposited on glass or transparent polymer substrates by magnetron sputtering, and have low surface sheet resistance (Rs~10Ω / □ ) and high visible light transmittance (light transmittance > 80% at 550nm). However, the metal indium used in ITO is a scarce element with limited natural reserves that are about to be exhausted, n...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/02H01B1/04H01B5/14H01B13/00
CPCH01B1/04H05B33/26H01B1/22H01B1/24
Inventor 李维实赵福刚
Owner SHANGHAI INST OF ORGANIC CHEM CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap