Quantum dot electroluminescence device, preparation method and application of quantum dot electroluminescent device

An electroluminescent device and quantum dot light-emitting technology, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of complex development process, discount of practical value, high cost, etc., and achieve the effect of high purity of luminous color and simple preparation process

Inactive Publication Date: 2013-12-04
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to solve the problem that the light sources compatible with the night vision imaging system are all equipped with a filter before the general light source or a plurality of LEDs with color-matched light. The development process is complicated, the cost is high, and the final practical value is often large. Discount etc.

Method used

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  • Quantum dot electroluminescence device, preparation method and application of quantum dot electroluminescent device
  • Quantum dot electroluminescence device, preparation method and application of quantum dot electroluminescent device
  • Quantum dot electroluminescence device, preparation method and application of quantum dot electroluminescent device

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Embodiment 1

[0045] figure 1 is an embodiment of the present invention, such as figure 1 As shown, the quantum dot electroluminescent device includes: an electron injection layer (cathode), an electron transport layer, a quantum dot light-emitting layer, a hole transport layer, an anode auxiliary layer, and a hole injection layer (anode).

[0046] The electron injection layer (cathode) is an Al electrode 11, the electron transport layer is an Alq3 layer 12, the quantum dot light-emitting layer is a quantum dot light-emitting layer QDs23, the hole transport layer is a Poly-TPD layer 14, and the anode auxiliary layer is a PEDOT:PSS layer 15 , and the hole injection layer (anode) is an ITO thin film 16 .

[0047] A method for preparing a quantum dot electroluminescent device, comprising the following steps:

[0048] 1. Solution preparation:

[0049] Prepare Poly-TPD / chlorobenzene solution and quantum dot (such as 523nm CdSe / ZnS) / toluene solution one day in advance, with concentrations of 10m...

Embodiment 2

[0066] figure 2 is another embodiment of the present invention, such as figure 2 As shown, the quantum dot electroluminescent device includes: an electron injection layer (cathode), an electron transport layer, a quantum dot light-emitting layer, a hole transport layer, an anode auxiliary layer, and a hole injection layer (anode).

[0067] The electron injection layer (cathode) is an Al electrode 21, the electron transport layer is a ZnO layer 22, the quantum dot light-emitting layer is a quantum dot light-emitting layer QDs23, the hole transport layer is a Poly-TPD layer 24, and the anode auxiliary layer is a PEDOT:PSS layer 25 1. The hole injection layer (anode) is an ITO thin film 26 .

[0068] Replace the Alq3 layer with a ZnO layer, as follows: prepare a ZnO / isopropanol solution with an absorbance (OD) >40, and spin-coat it on the substrate after step 5. The speed of the homogenizer is 1K rpm for 40 seconds, and then Bake on an 80°C heating table for 30 minutes and le...

Embodiment 3

[0072] image 3 Another embodiment of the present invention, such as image 3 As shown, the quantum dot electroluminescent device includes: an electron injection layer (cathode), an electron transport layer, a quantum dot light-emitting layer, a hole transport layer, an anode auxiliary layer, and a hole injection layer (anode).

[0073] The electron injection layer (cathode) is a Ca / Al mixed electrode composed of an Al electrode 31 and a Ca electrode 30, the electron transport layer is a ZnO layer 32, the quantum dot light emitting layer is a quantum dot light emitting layer QDs33, and the hole transport layer is a Poly-TPD layer 34. The anode auxiliary layer is a PEDOT:PSS layer 35, and a hole injection layer (anode) and an ITO thin film 36.

[0074] The electron injection layer (cathode) can be a mixed electrode made of a metal with a lower work function, such as Ca / Al, Mg / Ag, etc. In this embodiment, a Ca / Al mixed electrode is selected.

[0075] The substrate is on glass...

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Abstract

The invention provides a quantum dot electroluminescent device, a preparation method of the quantum dot electroluminescent device and application of the quantum dot electroluminescent device. The quantum dot electroluminescent device includes an electron injection layer (an cathode), an electron transmission layer, a quantum dot light-emitting layer, a hole transmission layer, an anode auxiliary layer, and a hole injection layer (an anode). The quantum dot electroluminescent device of the invention is advantageous in relatively simple preparation process, high-purity illuminant color and omission of light filters; the emitting color of the quantum dot electroluminescent device can be adjusted through the size of quantum dots; the quantum dot electroluminescent device can be made into a flexible device; and the quantum dot electroluminescent device can be applied to a night vision imaging system.

Description

technical field [0001] The invention relates to a light source device for special lighting, in particular to a quantum dot electroluminescence device, a preparation method and an application, and is applicable to the compatible field of night vision imaging systems. Background technique [0002] In recent years, with the global energy problem and the enhancement of people's awareness of environmental protection, a large number of energy-saving and environmentally friendly materials have entered people's lives. Light-emitting diodes (LEDs) have the advantages of high brightness, low energy consumption, low turn-on voltage, fast response, no radiation, and long life, and have become a new generation of lighting sources. Recently, semiconducting nanocrystalline quantum dots (QDs) materials with very specific optical properties and fluorescence mechanisms have been widely used in LED technology. [0003] For aircraft, the light source, indicator light, display and other light a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/00
Inventor 翟保才张文君许键
Owner UNIV OF SHANGHAI FOR SCI & TECH
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