Silicone substrate high-linearity low-phase-shift ultra-broad-band digital attenuator

Abstract

The invention discloses a silicone substrate high-linearity low-phase-shift ultra-broad-band digital attenuator which comprises a 1dB attenuating module, a 2dB attenuating module, a 4dB attenuating module, a 8dB attenuating module and a 16dB attenuating module. Two NMOS field effect transistors which are of a channel parallel-connection resistor structure and of a solid suspension structure and manufactured through SiGe BiCMOS technology are adopted to be used as control switches, five sets of complementary digital signals are used for controlling the five attenuating modules independently to work, a low-pass network is used for conducting phase compensation, inductance is used for matching between the adjacent attenuating modules, matching between the input end of the1dB attenuating module and 50 omega input impedance and matching between the output end of the 16dB attenuating module and 50 omega output impedance are realized through transmission wires, the working frequency range is 1-25GHz, and low-differential-loss low-phase-shift attenuation of signal amplitudes under 32 states can be realized with the 1dB length stepping in the attenuating range of 0-31dB. The silicone substrate high-linearity low-phase-shift ultra-broad-band digital attenuator has the advantages of being low in differential loss, low in accessory phase shift, high in linearity, low in production cost and low in chip area, and can be used for large-amplitude signal processing and single chip integration.

Description

technical field [0001] The invention belongs to the field of electronic technology, and further relates to a silicon-based high-linearity low-phase-shift ultra-wideband digital attenuator in the technical field of communication and radar system electronic components. The invention can be used in ultra-wideband communication systems, automatic gain control systems, phased array systems, electronic countermeasures systems, and CDMA communication systems to realize low-phase-shift gain change attenuation high linearity functional modules for signal amplitudes. Background technique [0002] At present, in the field of electronic components of communication and radar systems, ultra-wideband digital attenuators are widely used in ultra-wideband communication systems, automatic gain control systems, phased array systems, electronic countermeasure systems, and CDMA communication systems. The digital attenuator with precise attenuation accuracy and high linearity enables communicatio...

AI Technical Summary

Problems solved by technology

The disadvantage of the attenuation module disclosed in this patented technology is that the electronically controlled attenuator module is used as the PIN diode of the control switch in this patented technology, which cannot be directly processed and manufactured by the existing silicon-based CMOS or BiCMOS process, and additional process steps are required manufacturing, which increases the manufacturing cost of the attenuator

Although the numerically controlled attenuator disclosed in this patent application document has low insertion loss and additional phase shift, there are still shortcomings: the high electron mobility transistor of the gallium arsenide process is used in the numerically controlled attenuator as the state of the different attenuation modules Switching control switch, high production cost, low yield

Although it has the advantages of wide operating frequency range, small differential loss, and high attenuation accuracy, there are still shortcomings: the use of single-pole double-throw switches to achieve attenuation control not only requires two signal paths, but also increases the complexity of the circuit structure. The chip area occupied by the circuit design is large, which greatly reduces the chip integration of the circuit, and its linearity is not as good as a single CMOS FET switch, which limits the signal processing capability of the attenuator

However, there are still shortcomings: high electron mobility transistors using gallium arsenide technology as control switches have high production costs and low yields, are not compatible with existing VLSI manufacturing technologies, and are not suitable for single-chip integration. , and occupy a large chip area

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