Drawing method of float-zone silicon single crystals
A manufacturing method and zone melting silicon technology, which is applied in the field of zone melting silicon single crystal drawing, can solve the problems of poor insulation, that is, poor anti-ionization, low mechanical strength of silicon single crystal, and high production cost, so as to improve performance and expand application Scope and field, effect of reducing defect density
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Embodiment 1
[0008] This embodiment provides a method for pulling a 5-inch zone molten silicon single crystal, comprising the following steps:
[0009] (1) Load the polycrystalline rod into the crystal holder in the zone furnace, and load the seed crystal into the seed crystal fixed chuck;
[0010] (2) Put the preheating sheet around the seed crystal, close the furnace door and vacuumize, and fill the mixed gas of argon and nitrogen at the same time, in which the volume ratio of nitrogen to argon is 3%, and heat the polycrystalline rod after filling ;
[0011] (3) After the preheating is completed, the material is melted. After the polycrystalline material is melted, the seed crystal and the molten silicon are welded, and the melting zone is shaped and seeded after welding;
[0012] (4) After the seeding is completed, grow a thin neck with a diameter of 3-6mm and a length of 20-100mm.
[0013] (5) Reduce the speed of the lower crystal, control the angle of the shoulder to 40-70 degrees, ...
Embodiment 2
[0018] This embodiment provides a method for pulling a fused silicon single crystal in a 4-inch area, comprising the following steps:
[0019] (1) Load the polycrystalline rod into the crystal holder in the zone furnace, and load the seed crystal into the seed crystal fixed chuck;
[0020] (2) Place the preheating sheet around the seed crystal, close the furnace door and vacuumize, and fill the mixture of argon and nitrogen at the same time, wherein the volume ratio of nitrogen to argon is 0.05%, and heat the polycrystalline rod after filling;
[0021] (3) After the preheating is completed, the material is melted. After the polycrystalline material is melted, the seed crystal and the molten silicon are welded, and the melting zone is shaped and seeded after welding;
[0022] (4) After the seeding is completed, grow a thin neck with a diameter of 3-6mm and a length of 20-100mm.
[0023] (5) Reduce the speed of the lower crystal, control the angle of the shoulder to 40-70 degre...
Embodiment 3
[0028] This embodiment provides a method for pulling a 6-inch zone molten silicon single crystal, comprising the following steps:
[0029] (1) Load the polycrystalline rod into the crystal holder in the zone furnace, and load the seed crystal into the seed crystal fixed chuck;
[0030] (2) Put the preheating sheet around the seed crystal, close the furnace door and vacuumize, and fill the mixed gas of argon and nitrogen at the same time, in which the volume ratio of nitrogen to argon is 10%, and heat the polycrystalline rod after filling ;
[0031] (3) After the preheating is completed, the material is melted. After the polycrystalline material is melted, the seed crystal and the molten silicon are welded, and the melting zone is shaped and seeded after welding;
[0032] (4) After the seeding is completed, grow a thin neck with a diameter of 3-6mm and a length of 20-100mm.
[0033] (5) Reduce the speed of the lower crystal, control the angle of the shoulder to 40-70 degrees,...
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