Drawing method of float-zone silicon single crystals

A manufacturing method and zone melting silicon technology, which is applied in the field of zone melting silicon single crystal drawing, can solve the problems of poor insulation, that is, poor anti-ionization, low mechanical strength of silicon single crystal, and high production cost, so as to improve performance and expand application Scope and field, effect of reducing defect density

Inactive Publication Date: 2013-12-11
TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

From the melting of polysilicon to shouldering, growth, finishing, cooling and other processes, a certain amount of argon gas is introduced into the furnace. This process has the disadvantages of high production cost, low mechanical strength of silicon single crystal and non-adjustable.
Silicon single crystals can also be grown under high-purity nitrogen, but the insulation and anti-ionization properties of nitrogen are worse than that of argon. Therefore, high-purity nitrogen is not the first choice as a protective gas.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0008] This embodiment provides a method for pulling a 5-inch zone molten silicon single crystal, comprising the following steps:

[0009] (1) Load the polycrystalline rod into the crystal holder in the zone furnace, and load the seed crystal into the seed crystal fixed chuck;

[0010] (2) Put the preheating sheet around the seed crystal, close the furnace door and vacuumize, and fill the mixed gas of argon and nitrogen at the same time, in which the volume ratio of nitrogen to argon is 3%, and heat the polycrystalline rod after filling ;

[0011] (3) After the preheating is completed, the material is melted. After the polycrystalline material is melted, the seed crystal and the molten silicon are welded, and the melting zone is shaped and seeded after welding;

[0012] (4) After the seeding is completed, grow a thin neck with a diameter of 3-6mm and a length of 20-100mm.

[0013] (5) Reduce the speed of the lower crystal, control the angle of the shoulder to 40-70 degrees, ...

Embodiment 2

[0018] This embodiment provides a method for pulling a fused silicon single crystal in a 4-inch area, comprising the following steps:

[0019] (1) Load the polycrystalline rod into the crystal holder in the zone furnace, and load the seed crystal into the seed crystal fixed chuck;

[0020] (2) Place the preheating sheet around the seed crystal, close the furnace door and vacuumize, and fill the mixture of argon and nitrogen at the same time, wherein the volume ratio of nitrogen to argon is 0.05%, and heat the polycrystalline rod after filling;

[0021] (3) After the preheating is completed, the material is melted. After the polycrystalline material is melted, the seed crystal and the molten silicon are welded, and the melting zone is shaped and seeded after welding;

[0022] (4) After the seeding is completed, grow a thin neck with a diameter of 3-6mm and a length of 20-100mm.

[0023] (5) Reduce the speed of the lower crystal, control the angle of the shoulder to 40-70 degre...

Embodiment 3

[0028] This embodiment provides a method for pulling a 6-inch zone molten silicon single crystal, comprising the following steps:

[0029] (1) Load the polycrystalline rod into the crystal holder in the zone furnace, and load the seed crystal into the seed crystal fixed chuck;

[0030] (2) Put the preheating sheet around the seed crystal, close the furnace door and vacuumize, and fill the mixed gas of argon and nitrogen at the same time, in which the volume ratio of nitrogen to argon is 10%, and heat the polycrystalline rod after filling ;

[0031] (3) After the preheating is completed, the material is melted. After the polycrystalline material is melted, the seed crystal and the molten silicon are welded, and the melting zone is shaped and seeded after welding;

[0032] (4) After the seeding is completed, grow a thin neck with a diameter of 3-6mm and a length of 20-100mm.

[0033] (5) Reduce the speed of the lower crystal, control the angle of the shoulder to 40-70 degrees,...

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Abstract

The invention provides a drawing method of float-zone silicon single crystals. The method comprises the following steps: charging; smelting materials; introducing crystals; growing thin neck; shouldering; constant-diameter growing; ending; cooling; dismounting the furnace; and the like. The method specifically comprises the following steps: before heating polycrystalline silicon, filling a mixed gas of argon and nitrogen in a float-zone furnace, wherein the volume ratio of nitrogen and argon is 0.05%-20%; and after ending, stopping filling argon and nitrogen. According to the drawing method provided by the invention, the production cost of silicon single crystals is lowered while spark breakdown of a coil caused by gas ionization at a high temperature is effectively prevented. Nitrogen atoms can reduce the defect density of the float-zone silicon single crystals, and dislocation movement in pinning crystals can enhance the mechanical strength of the float-zone silicon single crystals, so that the performance of subsequent apparatuses is improved. Silicon single crystals with different mechanical performances can be obtained by adjusting the proportion of argon, so that expansion of application range and field of the silicon single crystals is facilitated.

Description

technical field [0001] The invention belongs to the technical field of silicon single crystal production, and in particular relates to a pulling method of zone melting silicon single crystal. Background technique [0002] During the growth of silicon single crystals, high-purity argon is generally used as a protective gas to prevent the ignition and breakdown of the coil caused by gas ionization at high temperatures. From the melting of polysilicon to shouldering, growth, finishing, cooling and other processes, a certain amount of argon gas is introduced into the furnace. This process has the disadvantages of high production cost, low and non-adjustable mechanical strength of silicon single crystal. Silicon single crystals can also be grown under high-purity nitrogen, but the insulating properties of nitrogen, that is, the anti-ionization property, is worse than that of argon. Therefore, high-purity nitrogen is not the first choice as a protective gas. Contents of the inve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B13/00C30B15/00C30B29/06
Inventor 乔柳张雪囡张长旭孙健李立伟王彦君
Owner TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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