A kind of sic optical material processing equipment

A technology for processing equipment and optical materials, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, and circuits. The effect of speed improvement and low cost

Active Publication Date: 2016-12-28
NAT UNIV OF DEFENSE TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Traditional lapping and polishing methods are suitable for small and single-piece processing of SiC optical materials. Combining manual repair and polishing can also solve the processing problems of some aspheric surfaces, but the processing efficiency is low, the accuracy convergence is slow, and product quality and processing cycle are not easy to guarantee.
[0006] The grinding method has a high material removal rate, but subsurface damage occurs during the grinding process, and at the same time, a residual stress layer is formed on the surface of the workpiece
[0007] The computer-controlled deterministic polishing method is the key technology for obtaining higher surface accuracy. The methods that can be used to process SiC optical materials mainly include dual-rotor small tool polishing method, ion beam modification method and magnetorheological polishing method. However, The processing efficiency of the above method is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of sic optical material processing equipment
  • A kind of sic optical material processing equipment
  • A kind of sic optical material processing equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0032] Such as figure 1 As shown, the SiC optical material processing equipment of the present invention includes an inductively coupled plasma generator, a working gas supply source 8 and a reactive gas supply source 9, and the reactive gas supply source 9 is equipped with a Reactive gases that chemically react with SiC, such as SF 6 or NF 3 or CF 4 . The inductively coupled plasma generating device comprises a plasma torch 34 and an induction coil 35 sleeved outside the plasma torch 34, and the plasma torch 34 is used to generate a plasma torch 37 (see image 3 ), the plasma torch 34 uses a Fassel torch, which is widely used in ICP-OES spectrometer equipment, with low cost and mature technology, and can be used to generate stable plasma and excite reaction gases. Wherein, the working gas supply source 8 is connected with the mi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses SiC optical material processing equipment, which comprises an inductively coupled plasma generator, a working gas supply source (8) and a reaction gas supply source (9). The reaction gas supply source (9) is equipped with a The reactive gas that chemically reacts with SiC after being excited by the inductively coupled plasma generating device, the inductively coupled plasma generating device includes a plasma torch (34) and an induction coil (35) sleeved outside the plasma torch (34) ), the working gas supply source (8) and the reaction gas supply source (9) are connected to the plasma torch (34), one end of the induction coil (35) is connected to the radio frequency power supply (4), and the induction coil The other end of (35) is grounded through the adjustable resistor R1. The invention has the advantages of simple structure, low cost, no subsurface damage and no residual stress layer during processing, and high processing efficiency.

Description

technical field [0001] The invention mainly relates to the field of optical material processing equipment, in particular to a SiC optical material processing equipment. Background technique [0002] With the rapid development of space astronomical optics, satellite remote sensing technology, and large-scale ground-based optical systems, the requirements for the operating band, imaging resolution, thermal stability, and system weight of the optical system are becoming more and more stringent. Therefore, the optical system is moving along the Reflective, large-diameter, and lightweight trends develop. In optical system design, selecting the appropriate reflector material is of great significance to meet the above indicators. Due to the constraints of difficult manufacturing, high launch and operating costs, and special working environment in space optical systems, the following aspects must be considered in the selection of space mirror materials: (1) Isotropic and dimensiona...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/263G02B5/08
Inventor 解旭辉史宝鲁李圣怡戴一帆周林廖春德
Owner NAT UNIV OF DEFENSE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products