Solar monocrystalline silicon cleaning solution and cleaning method

A monocrystalline silicon wafer and solar energy technology, which is applied in cleaning methods and appliances, cleaning methods using liquids, chemical instruments and methods, etc., can solve the problem of not meeting the technical requirements of cells, affecting the yield and product quality, and reducing the battery capacity. In order to achieve the effect of reducing organic matter and metal ion residues, improving market competitiveness and improving surface state structure

Active Publication Date: 2013-12-25
GCL POLY ENERGY HLDG
View PDF8 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The surface of the monocrystalline silicon wafer cleaned by this process has many metal impurities and organic dirt residues, and white spots appear during flocking, whi

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar monocrystalline silicon cleaning solution and cleaning method
  • Solar monocrystalline silicon cleaning solution and cleaning method
  • Solar monocrystalline silicon cleaning solution and cleaning method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] 1) A batch of 200 monocrystalline silicon wafers is ultrasonically cleaned in the pickling tank, pure water rinsing tank, cleaning agent washing tank, cleaning agent washing tank and pure water rinsing tank. The cleaning time in each tank is 240s.

[0050] 2) Immerse the batch of monocrystalline silicon wafers in the chemical tank containing solar single crystal silicon wafer cleaning solution for cleaning, turn on the ultrasound, set the temperature of the chemical tank to 35°C, and the cleaning time is 240s.

[0051] Each component and mass percentage in this solar single crystal silicon wafer cleaning liquid are respectively: hydrogen peroxide adopts mass fraction to be 30% hydrogen peroxide analytical pure reagent, and mass percentage is 3%; Potassium hydroxide adopts analytical pure reagent, mass percentage is 0.1%; the balance is pure water, and the resistance is 15 megohms.

[0052] 3) The batch of monocrystalline silicon wafers cleaned in step 2) are rinsed twi...

Embodiment 2

[0054] 1) A batch of 225 monocrystalline silicon wafers is ultrasonically cleaned in the pickling tank, pure water rinsing tank, cleaning agent washing tank, cleaning agent washing tank and pure water rinsing tank. The cleaning time in each tank is 300s.

[0055] 2) Immerse the batch of monocrystalline silicon wafers in the chemical tank containing solar single crystal silicon wafer cleaning solution for cleaning, turn on the ultrasound, set the temperature of the chemical tank to 45°C, and the cleaning time is 300s.

[0056] Each component and mass percent in this solar single crystal silicon wafer cleaning solution are respectively: hydrogen peroxide adopts the mass fraction of 30% hydrogen peroxide analytical pure reagent, and the mass percentage is 2%; Potassium hydroxide adopts analytical pure reagent, the mass percentage is 0.2%; the balance is pure water, and the resistance is 13 megohms.

[0057] 3) The batch of monocrystalline silicon wafers cleaned in step 2) are ri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a solar monocrystalline silicon cleaning solution. The solar monocrystalline silicon cleaning solution includes, by weight, 1% to 5% of 30% of hydrogen peroxide solution, 0.05% to 0.30% of potassium hydroxide and 94.95 % to 98.95% of pure water. According to the solar monocrystalline silicon cleaning solution, strong oxidizing property of hydrogen peroxide and corrosive effect on oxide films by OH- are utilized, organics, the oxide films and dirts like contaminants deposited in the oxide films can be removed from the surface of silicon effectively, cleanliness of the surface of silicon is improved, white spots are prevented during flocking, and chromatic aberration is also prevented from being produced. Furthermore, the invention relates to a cleaning method of the solar monocrystalline silicon.

Description

technical field [0001] The invention relates to the field of photovoltaic products, in particular to a solar monocrystalline silicon chip cleaning solution and a cleaning method. Background technique [0002] With the rapid development and wide application of global crystalline silicon solar cells, high-quality photovoltaic devices with excellent performance and good stability are increasingly favored by the market. Among them, the cleanliness and surface state of the silicon wafer surface are crucial to high-quality photovoltaic devices. Silicon wafers are processed by wire cutting, the abrasion of steel wires, the grinding of silicon carbide and the residue of cutting fluid will inevitably cause the surface of silicon wafers to be dirty. The purpose of silicon wafer cleaning is to remove dirt such as particles, metals and organic substances on the surface of the wafer. If the cleaning effect of the silicon wafer cannot meet the requirements, no matter how good the proces...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B08B3/08C11D7/18
Inventor 薛晓敏孙翠枝
Owner GCL POLY ENERGY HLDG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products