Method for manufacturing grid line with high uniformity through double exposure

A gate line, double exposure technology, applied in microlithography exposure equipment, photolithography process exposure equipment, semiconductor/solid-state device manufacturing, etc., can solve the problems of limited uniformity, complex process, low production capacity, etc. cost, simplify the production process, and improve the effect of production capacity
CN103488058AActive Publication Date: 2014-01-01SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SHANGHAI HUALI MICROELECTRONICS CORP
Publication Date
2014-01-01

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Abstract

The invention provides a method for manufacturing a grid line with high uniformity through double exposure. The method comprises the following steps: sequentially depositing a polycrystalline silicon thin film, an amorphous carbon thin film and a silicon oxide thin film containing carbon, and then coating, so as to form a first photoresist for a hard film; performing exposure and development to form a first grid line structure in a first photoresist film; curing the first grid line structure, and heating, so as to enable a silanization material to react with the surface of the first photoresist to form an isolating film which is insoluble in a second photoresist; coating the second photoresist on the cured first photoresist; performing exposure and development to form a first line end cutting figure in a second photoresist film; etching the isolating film and a first line by using the second photoresist film as a mask, so as to form a second line end cutting figure; sequentially etching all films by using the rest isolating film and the first grid line as the mask, and finally forming a second grid line structure in the polycrystalline silicon thin film.
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Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a method for manufacturing high-uniformity gate lines by double exposure. Background technique

[0002] As the integration level of semiconductor chips continues to increase, the feature size of transistors continues to shrink, posing more and more challenges to the photolithography process. The traditional photolithography process usually adopts organic bottom anti-reflective coating (BARC) with polymer materials as the main body to improve the capability of the photolithography process. Figure 1A It is a schematic diagram of the structure of the substrate silicon wafer 1, the organic anti-reflection film 2, and the photoresist 3. The organic anti-reflection film can also expand the adjustable range of the etching process and improve the uniformity of the pattern structure after etching.

[0003] After entering the 45nm technology node,...

Claims

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