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Pressure sensor based on micro-structure gate insulation layer and manufacturing method thereof

A technology of pressure sensor and gate insulating layer, which is applied in the field of pressure sensor based on microstructured gate insulating layer and its preparation, can solve the problems of poor sensor uniformity, unfavorable preparation, large difference, etc., and achieve the effect of high sensitivity

Active Publication Date: 2014-01-01
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

However, the active layer of this type of sensor reported so far is based on a single wafer of semiconductor materials, and its preparation process involves the preparation and transfer of a single crystal, which is relatively complicated; at the same time, due to the large differences between different crystals, the uniformity of the sensor The property is poor; and it is not conducive to the preparation of large area and solubilization

Method used

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  • Pressure sensor based on micro-structure gate insulation layer and manufacturing method thereof

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preparation example Construction

[0026] In addition, the present invention also provides a method for preparing a pressure sensor based on a microstructured gate insulating layer, comprising the following steps:

[0027] S1. Prepare a source electrode 2 and a drain electrode 3 on the substrate 1;

[0028] S2, on the source electrode 2, the drain electrode 3 and the substrate 1, prepare cross-linked semiconductor nanocrystals as the active layer 4;

[0029] S3. On the flexible substrate 7, prepare the gate electrode 6;

[0030] S4, preparing an insulating layer on the flexible substrate 7 and the gate electrode 6;

[0031] S5, preparing the microstructure of PDMS on the insulating layer to form a gate insulating layer containing the microstructure;

[0032] S6. The gate insulating layer containing the microstructure obtained in step (5) is reversely transferred to the surface of the active layer obtained in step (2) to obtain a pressure sensor based on the microstructure gate insulating layer.

Embodiment 1

[0034] The prepared in this embodiment is based on the top grid-bottom contact type pressure sensor, and its fabrication method is as follows:

[0035] S1, prepare a source electrode 2 and a drain electrode 3 made of gold with a thickness of 100 nm on the silicon substrate 1 by thermal evaporation. Wherein, the width of the source electrode 2 and the drain electrode 3 is 200 μm, the length is 1000 μm, and the distance between the two electrodes is 20 μm.

[0036] S2, on the silicon substrate 1, the source electrode 2, and the drain electrode 3, a cross-linked one-dimensional peryleneimide compound nanocrystal is prepared as the active layer 4 by a spin coating method.

[0037] S3, on the PET substrate 7, a gate electrode 6 with a thickness of 100 nm is prepared by sputtering, and the gate electrode is made of Si. Wherein, the production method of the PET substrate 7 is to use PET (Polyethylene terephthalate, polyterephthalate plastic) as the substrate, and then use acetone, e...

Embodiment 2

[0044] The prepared in this embodiment is based on the top grid-bottom contact type pressure sensor, and its fabrication method is as follows:

[0045] S1, prepare a layer of source electrode 2 and drain electrode 3 made of gold with a thickness of 100 nm on the PC substrate 1 by sputtering. Wherein, the width of the source electrode 2 and the drain electrode 3 are both 200 μm, the length is 200 μm, and the distance between the two electrodes is 20 μm.

[0046]S2, on the PC substrate 1, the source electrode 2, and the drain electrode 3, a mixed film of crosslinked one-dimensional metalloporphyrin compound nanocrystals and polyfluorene is prepared as the active layer 4 by the liquid phase drop film method.

[0047] S3, on the PET substrate 7, a gate electrode 6 with a thickness of 60 nm is prepared by sputtering, and the gate electrode is made of gold. Wherein, the preparation method of PET substrate 7 is to use PET as the substrate, use acetone, ethanol, pure water to sonicat...

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Abstract

The invention relates to a pressure sensor based on a micro-structure gate insulation layer. The pressure sensor comprises a substrate, an active layer, the gate insulation layer and a flexible substrate, the substrate, the active layer, the gate insulation layer and the flexible substrate are arranged in sequence, an active electrode and a drain electrode are arranged between the substrate and the active layer, a gate electrode is arranged between the flexible substrate and the gate insulation layer, the gate insulation layer comprises an insulation layer and a PDMS micro-structure arranged on the insulation layer, and the active layer is cross-linked semiconductor compound nanocrystalline. The pressure sensor comprises the gate electrode, the active electrode, the drain electrode, the gate insulation layer and the active layer, wherein the active layer is the crossed-link nanocrystalline made of organic semiconductor layer materials, and is formed by the interaction force of organic semiconductor molecules. The pressure sensor has the advantages of being capable of being manufactured in a solubilizing mode, flexible, high in sensitivity and the like.

Description

【Technical field】 [0001] The invention belongs to the technical field of sensor preparation, in particular to a pressure sensor based on a microstructure gate insulating layer and a preparation method thereof. 【Background technique】 [0002] Pressure sensor is the most commonly used sensor in industry and instrumentation control, and is widely used in various industrial automatic control environments, involving water conservancy, hydropower, railway transportation, production automatic control, aerospace, military industry, petrochemical, oil wells, electric power, ships, Machine tools, official roads and many other industries. [0003] At present, there are many types of pressure sensors, and the commonly used ones are piezoresistive pressure sensors, which use the piezoresistive effect of single crystal silicon materials and integrated circuit technology to make sensors, which have high response frequency, small size, low power consumption, and high sensitivity. High, goo...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/40G01L1/16B82Y15/00
CPCG01L1/16H10K71/00H10K10/474
Inventor 潘革波王凤霞
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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