A processing method for improving surface quality and product yield of sapphire substrate

A surface quality and processing method technology, applied in the field of sapphire substrate surface treatment technology, can solve the problems of affecting production efficiency, low processing efficiency, high fragmentation rate, etc., and achieve the effect of increasing productivity, increasing production efficiency and reducing fragmentation rate

Active Publication Date: 2015-07-29
GUANGDONG FUYUAN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high hardness physical characteristics of the sapphire material itself, diamond liquid is generally used to process it. The processing efficiency is low and the substrate sheet will generate large stress after each grinding, which will cause warping. After grinding the surface of sapphire with diamond liquid Produces a certain depth of surface damage layer with a high fragmentation rate
In order to reduce the grinding stress, the mechanical grinding process requires multiple high-temperature annealing during the processing process. Generally, the annealing temperature is above 1500 degrees. Each annealing lasts for 48-72 hours from heating to cooling, which seriously affects production efficiency.
In order to reduce the damage layer by mechanical grinding, the grinding rate is gradually reduced at the end of the processing to reduce the depth of the surface damage layer. The process is complicated and the efficiency is low.

Method used

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  • A processing method for improving surface quality and product yield of sapphire substrate

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025]200 4-inch sapphire substrates after multi-wire cutting were cleaned and roughly ground, divided into 2 groups of 100 pieces, one group was processed by the traditional process, and the other group was processed by the process of the present invention, and the final results were compared.

[0026] The process flow of the present invention: (1) Mechanical fast rough grinding, put the cleaned substrate into the grinding equipment, use 250# boron carbide powder to mix with water according to the concentration ratio of 30% as the grinding liquid, and the grinding speed is 800 rpm, the grinding time is 30 minutes, the removal amount is 90 μm, and the ground substrate is cleaned in an ultrasonic cleaning tank;

[0027] (2) Dry chemical etching to remove stress. Put the cleaned substrate in an 80°C constant temperature oven for 24 hours to dry. After drying, soak in acetone solution to remove residual oil on the surface. After soaking, dry the substrate with a nitrogen gun. Aft...

Embodiment 2

[0033] 200 pieces of 4-inch sapphire substrates after multi-wire cutting were cleaned and roughly ground, and divided into 2 groups, 100 pieces in each group, one group adopts the traditional process, and one group adopts the process of the present invention.

[0034] The process flow of the present invention: (1) Mechanical fast rough grinding, put the cleaned substrate into the grinding equipment, use 260# boron carbide powder to mix with water according to the concentration ratio of 40% as the grinding liquid, and the grinding speed is 900 rpm, the grinding time is 25 minutes, the removal amount is 100 μm, and the ground substrate is cleaned in an ultrasonic cleaning tank;

[0035] (2) Dry chemical etching to remove stress. Put the cleaned substrate in an 80°C constant temperature oven for 24 hours to dry. After drying, soak in acetone solution to remove residual oil on the surface. After soaking, dry the substrate with a nitrogen gun. After blowing dry, put it into a dry e...

Embodiment 3

[0041] 200 pieces of 4-inch sapphire substrates after multi-wire cutting were cleaned and roughly ground, and divided into 2 groups, 100 pieces in each group, one group adopts the traditional process, and one group adopts the process of the present invention.

[0042] The process flow of the present invention: (1) Mechanical fast rough grinding, put the cleaned substrate into the grinding equipment, use 280# boron carbide powder to mix with water according to the concentration ratio of 50% as the grinding liquid, and the grinding speed is 800 rpm, the grinding time is 20 minutes, the removal amount is 110 μm, and the ground substrate is cleaned in an ultrasonic cleaning tank;

[0043] (2) Dry chemical etching to remove stress. Put the cleaned substrate in an 80°C constant temperature oven for 24 hours to dry. After drying, soak in acetone solution to remove residual oil on the surface. After soaking, dry the substrate with a nitrogen gun. After drying, put it into a dry etchin...

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Abstract

The invention discloses a machining method for improving the surface quality and the product yield of a sapphire substrate, and belongs to the technical field of the sapphire machining process. The machining method is technically characterized by comprising the steps of mechanical and fast rough grinding, stress relief through dry method chemical etching, mechanical accurate grinding, flatness improvement through dry method chemical etching, and mechanical polishing. The machining method for improving the surface quality and the product yield of the sapphire substrate is reasonable in process, high in production efficiency and capable of effectively lowering the fragment rate and is used for surface treatment of the substrate.

Description

technical field [0001] The invention relates to a surface treatment process of a sapphire substrate, and more specifically relates to a processing method for improving the surface quality and product yield of a sapphire substrate. Background technique [0002] Sapphire substrates for LED epitaxy have high requirements on surface quality. The requirements for TTV, BOW, and WARP of 2-inch polished wafers are: TTV﹤5μm, BOW﹤10μm, and WARP﹤10μm. The current process of sapphire substrate is mechanical grinding, mechanical polishing, annealing and so on. Due to the high hardness physical characteristics of the sapphire material itself, diamond liquid is generally used to process it. The processing efficiency is low and the substrate sheet will generate large stress after each grinding, which will cause warping. After grinding the surface of sapphire with diamond liquid A certain depth of surface damage layer is produced, and the fragmentation rate is high. In order to reduce the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/04H01L21/304H01L21/306
CPCB24B37/04H01L21/304H01L21/306
Inventor 杜彦召
Owner GUANGDONG FUYUAN TECH CO LTD
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