Semiconductor structure and method

Abstract

A system and a method for providing support to a semiconductor wafer are provided. In the embodiment, the method comprises introducing a vacancy enhancing material during the formation of a semiconductor ingot prior to the semiconductor wafer being separated from the semiconductor ingot. The vacancy enhancing material forms vacancies at a high density within the semiconductor ingot, and the vacancies form bulk micro defects within the semiconductor wafer during high temperature processes such as annealing. These bulk micro defects help to provide support and strengthen the semiconductor wafer during subsequent processing and helps to reduce or eliminate a fingerprint overlay that may otherwise occur. The invention also provides a semiconductor structure and a method.

Description

technical field [0001] The present invention relates generally to the field of semiconductor technology and, more particularly, to semiconductor structures and methods. Background technique [0002] Typically, an integrated circuit may be formed from a plurality of semiconductor devices within a semiconductor die. As a starting point for this process, a semiconductor device can be formed through a series of fabrication steps including oxidation, implantation, deposition, photolithography, etching, annealing, chemical mechanical polishing. Once the semiconductor devices have been formed, in order to interconnect the individual devices and also to provide connections between the individual devices and external devices, a series of conductive and dielectric layers may be deposited or otherwise formed over the semiconductor devices so that Used by consumers for all-in-one integrated circuits. [0003] However, as integrated circuits and their associated semiconductor devices a...

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Problems solved by technology

[0003] However, as integrated circuits and their associated semiconductor devices are scaled down to smaller and smaller sizes in a process of rapid miniaturization, problems have arisen at all levels of production

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