Method for preparing thin films made of lead zirconate titanate

Abstract

The invention relates to a method for preparing a thin film made of lead zirconate titanate with a perovskite structure in a 111 orientation, which comprises the following steps: providing a substrate with a substrate temperature higher than 450°C, a lead target, and a zirconium target material and titanium targets; the film is applied by sputtering lead, zirconium and titanium from the respective targets onto said substrate, wherein the total deposition rate of lead, zirconium and titanium is greater than 10 nm / min, the deposition of zirconium is selected The rate is such that the atomic concentration of zirconium in the film is between 0.2 and 0.3 relative to the atomic concentrations of zirconium and titanium, and depending on the substrate temperature and the total deposition rate of lead, zirconium and titanium, a sufficiently low concentration of lead is selected. The deposition rate is such that the X-ray diffraction pattern of 111 oriented lead zirconate titanate has a significant peak in the diffraction angle range of 33° to 35.5° (19); and the film is completed.

Description

technical field [0001] The invention relates to a method for preparing a thin film made of lead zirconate titanate with perovskite structure in 111 orientation. Background technique [0002] Thin films made of lead zirconate titanate are used in electronic assemblies that take advantage of the favorable dielectric, pyroelectric, and piezoelectric properties of lead zirconate titanate. Electronic components of this type are, for example, capacitors, pyroelectric detectors, piezoelectric actuators or semiconductor memory stores. [0003] To manufacture the assembly by conventional means, a first electrode layer is deposited on a substrate, then a film made of lead zirconate titanate is deposited thereon, and a second electrode layer is deposited thereon. Thin films made of lead zirconate titanate are produced using known thin film methods such as sputtering, CVD or sol-gel methods. In the sputtering method, a gas mixture of argon and oxygen is ionized in a vacuum to form a p...

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Problems solved by technology

[0006] The disadvantage of the sputtering method described is that the total deposition rate of lead, zirconium and titanium in the range of 1 nm / min to 7 nm / min represents only a low production rate of thin films, so that only low productivity of thin films can be achieved with this sputtering method , which makes the economic viability of this sputtering method for preparing thin films less

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