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Preparation method of aluminum-doped tin dioxide flower-like micro-sphere/nano-rod gas sensitive material

A technology of flower-shaped microspheres and gas-sensitive materials, which is applied in the field of inorganic semiconductor sensor material preparation, can solve problems such as high cost, high doping, and complicated process, and achieve the effects of obvious advantages, simple process, and obvious hydrogen gas sensitivity

Inactive Publication Date: 2014-02-05
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims at the existing SnO 2 Based on the shortcomings of high doping, high cost and complex process of base gas-sensing materials, aluminum-doped tin dioxide flower-like microspheres / nanorods were synthesized by hydrothermal method

Method used

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  • Preparation method of aluminum-doped tin dioxide flower-like micro-sphere/nano-rod gas sensitive material
  • Preparation method of aluminum-doped tin dioxide flower-like micro-sphere/nano-rod gas sensitive material
  • Preparation method of aluminum-doped tin dioxide flower-like micro-sphere/nano-rod gas sensitive material

Examples

Experimental program
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Effect test

Embodiment 1

[0021] SnO with a basicity of 6 2 Powder preparation: Weigh 0.5265g tin tetrachloride pentahydrate (SnCl 4 ·5H 2 O) Dissolve in 20ml of absolute ethanol, weigh sodium hydroxide (NaOH) with an alkalinity of 6 and dissolve it in 20ml of deionized water; under the action of magnetic stirring, slowly add sodium hydroxide to the ethanol solution of tin tetrachloride pentahydrate In the aqueous solution, a white turbid solution was obtained after continuous stirring for 20 minutes; the white turbid solution was transferred into a 50ml polytetrafluoroethylene-lined stainless steel reaction kettle, heated to 200°C, kept for 6 hours, and then naturally cooled to room temperature; the obtained white precipitate Centrifuge and wash with deionized water and absolute ethanol several times respectively; add a certain amount of absolute ethanol to the washed precipitate, shake well, place in a blast drying oven, and dry at 80°C for 10 hours.

Embodiment 2

[0023] SnO with a basicity of 8 2 Powder preparation: the steps in this example are exactly the same as those in Example 1 above. The difference is: Weigh sodium hydroxide (NaOH) with an alkalinity of 8 and dissolve it in 20ml of deionized water.

Embodiment 3

[0025] SnO with a basicity of 10 2 Powder preparation: the steps in this example are exactly the same as those in Example 1 above. The difference is: Weigh sodium hydroxide (NaOH) with an alkalinity of 10 and dissolve it in 20ml of deionized water.

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Abstract

The invention discloses a preparation method of an aluminum-doped tin dioxide flower-like micro-sphere / nano-rod gas sensitive material, which is characterized by comprising the following steps of (1) dissolving tetrachlorostannane pentahydrate and aluminum trichloride hexahydrate at a certain proportion into absolute ethyl alcohol, and dissolving a certain amount of sodium hydroxide into deionized water; (2) mixing the solution under the effect of a magnetic stirrer, and stirring at a medium speed for 20-30 minutes; (3) transferring the stirred solution into a reaction kettle, reacting for a certain time at the set temperature, and naturally cooling to room temperature; (4) performing centrifugal washing and drying to obtain doped tin dioxide powder. The gas sensitive material is of two micro structures including flower-like micro-sphere and nano-rod. The manufactured aluminum-doped SnO2 surface type gas sensing element has excellent sensitivity against hydrogen at a relatively low working temperature of 200-300 DEG C, and the highest sensitivity reaches 97.6% (the upper limit of sensitivity is 100%). By adopting the method disclosed by the invention, the prepared gas sensitive material is simple to prepare and has excellent gas sensitivity, thereby being an ideal hydrogen sensitive material.

Description

technical field [0001] The invention relates to the technical field of preparation of inorganic semiconductor sensor materials, in particular to a preparation method of an aluminum-doped tin dioxide flower-shaped microsphere / nanorod gas-sensing material. Background technique [0002] At present, there are many kinds of metal oxide semiconductor gas sensors used in gas monitoring and alarm systems, and the commonly used ones are ZnO, SnO 2 , Fe 2 o 3 , SrTiO 3 、In 2 o 3 and WO 3 Wait. In these semiconductor sensors, tin dioxide (SnO 2 ) as n-type wide bandgap (E g =3.6eV, the temperature is 300K) semiconductor, which has been extensively researched due to its low dimension, low cost, low energy consumption, high sensitivity, high stability and high selectivity, and is currently the most valuable semiconductor gas sensor for commercial production. It has been widely used in industry, agriculture, national defense, electronics, information and various fields closely re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/02B82Y30/00B82Y40/00
Inventor 甄玉花孙富华张敏贾凯丽
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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