Production method of tantalum target and tantalum target component

A manufacturing method and technology of tantalum target material, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of inability to meet the requirements of semiconductor sputtering process, uneven internal structure, coarse grains, etc.
CN103572225AActive Publication Date: 2014-02-12KONFOONG MATERIALS INTERNATIONAL CO LTD
5 Cites 22 Cited by

Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
KONFOONG MATERIALS INTERNATIONAL CO LTD
Publication Date
2014-02-12

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a production method of a tantalum target and a tantalum target component. The production method of a tantalum target comprises the following steps of providing a tantalum ingot; performing hot forging on the tantalum ingot to form a first tantalum target blank; performing first heat treatment on the first tantalum target blank to form a second tantalum target blank, wherein the temperature of the first heat treatment is 1,000-1,200 DEG C, and the temperature is maintained for 30-90 minutes; after the first heat treatment, performing hot rolling on the second tantalum target material to form a third tantalum target blank; performing second heat treatment on the third tantalum target blank to form the tantalum target, wherein the temperature of the second heat treatment is 1,000-1,200 DEG C, and the temperature is maintained for 30-90 minutes. By adopting the technical scheme, the produced tantalum target has relatively uniform internal organization and good magnetic property; moreover, by adopting the tantalum target to produce a tantalum target component for a semiconductor, the formed film has relatively good quality.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of target processing, in particular to a method for manufacturing a tantalum target and a tantalum target assembly. Background technique

[0002] Physical Vapor Deposition (PVD, Physical Vapor Deposition) is widely used in high-end industries such as optics, electronics, and information, such as: integrated circuits, liquid crystal displays (LCD, Liquid Crystal Display), industrial glass, camera lenses, information storage, ships , chemical industry, etc. Metal target components used in PVD are one of the most important raw materials in the manufacturing process of integrated circuits and liquid crystal displays.

[0003] The metal target component is composed of a metal target that meets the sputtering performance and a back plate with a certain strength. The back plate can play a supporting role when the metal target assembly is assembled to the sputtering base station, and has the effect of conducting heat. With...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More