Machining method of multilayer ultrathin diamond blade

A technology of diamond blades and processing methods, which is applied in coatings, electrolytic coatings, cells, etc., can solve problems such as blade quality degradation, blade interlayer peeling, and increased diamond grit detachment probability, so as to reduce equipment investment costs and improve economic efficiency. benefit, realize the effect of layered electrodeposition

Active Publication Date: 2014-02-19
SHENYANG ACAD OF INSTR SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, the distribution of diamond grits of different particle sizes in the entire blade is the same, and some diamond grits with large particle sizes are distributed on both sides, which increases the probability of diamond grit detachment, causes workpiece chipping or chipping, and reduces the use of life
[0004] The existing relevant literature records the processing methods of multi-lay...

Method used

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  • Machining method of multilayer ultrathin diamond blade
  • Machining method of multilayer ultrathin diamond blade
  • Machining method of multilayer ultrathin diamond blade

Examples

Experimental program
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Embodiment 1

[0031] according to Figure 1~3 The processing method of the multi-layer ultra-thin diamond blade of the present invention is set forth in detail, and the electrodeposition forming method is adopted, and the specific steps are as follows:

[0032] 1) Prepare the electrolyte with 350g / L nickel sulfamate, 10g / L cobalt sulfamate, 10g / L nickel chloride, 20g / L boric acid and 0.6g / L diamond grit with a particle size of 2~10μm. The pH of the solution is 3.5~4.0, and its temperature is kept at 45~50°C.

[0033] 2) The anode substrate 2 is made of electrolytic nickel plate, degreased and activated, and then the anode substrate 2 is connected to the positive electrode of the power supply and placed in the electrolyte, and the agitator 4 is started to stir the electrolyte 3 at a constant speed, and the rotation speed of the agitator is adjusted to make the diamond grit from The electrolytic cell 5 has a gradient distribution from the bottom of the cell to the opening of the notch, and t...

Embodiment 2

[0039] 1) Prepare the electrolyte with 425g / L nickel sulfamate, 25g / L cobalt sulfamate, 25g / L nickel chloride, 35g / L boric acid and 0.8g / L diamond grit with a particle size of 2~12μm. The pH of the solution is 3.5~4.0, and its temperature is maintained at 50~55°C.

[0040] 2) The anode substrate 2 is made of electrolytic nickel plate, degreased and activated, and then the anode substrate 2 is connected to the positive electrode of the power supply and placed in the electrolyte, and the agitator 4 is started to stir the electrolyte 3 at a constant speed, and the rotation speed of the agitator is adjusted to make the diamond grit from The electrolytic cell 5 has a gradient distribution from the bottom of the cell to the opening of the notch, and there is no deposition of diamond grains at the bottom of the cell.

[0041] 3) The current value density is set to 0.4A / dm 2 The cathode substrate 1 is made of an austenitic stainless steel plate with a polished surface, degreased, and...

Embodiment 3

[0044] 1) Prepare the electrolyte with 400g / L nickel sulfamate, 20g / L cobalt sulfamate, 20g / L nickel chloride, 30g / L boric acid and 0.4g / L diamond grit with a particle size of 2~20μm, and electrolyze The pH of the solution is 3.5~4.0, and its temperature is kept at 45~50°C.

[0045] 2) The anode substrate 2 is made of electrolytic nickel plate, degreased and activated, and then the anode substrate 2 is connected to the positive electrode of the power supply and placed in the electrolyte, and the agitator 4 is started to stir the electrolyte 3 at a constant speed, and the rotation speed of the agitator is adjusted to make the diamond grit from The electrolytic cell 5 has a gradient distribution from the bottom of the cell to the opening of the notch, and there is no deposition of diamond grains at the bottom of the cell.

[0046] 3) The current value density is set to 0.3A / dm 2 , the cathode substrate 1 is made of austenitic stainless steel plate with polished surface, degreas...

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Abstract

A machining method of a multilayer ultrathin diamond blade comprises the steps of employing an electro-deposition forming method, taking a surface ground austenitic stainless steel plate as a cathode substrate and sheet nickel as an anode substrate, adopting sulfamate electrolyte with lower internal stress, employing a rotating speed adjustable stirrer, putting the two substrates in the electrolyte, connecting the cathode substrate to a power supply cathode, connecting the anode substrate to a power supply anode, allowing the stirrer to rotate at certain speed, allowing nickel ions and diamond sand to be co-precipitated on the cathode substrate, obtaining multilayer composite sedimentary layers in different powder particles and concentration ratios by adjusting current values and the position of the cathode substrate in an electrolyzer at different time periods in the same electrolyte, demolding, machining to the specified size to form the required ultrathin diamond blade in a multilayer structure, wherein the electrolyte comprises nickel aminosulfonate, nickel chloride, cobalt sulfamate, boric acid, and the diamond sand with the particle size of 2-30 micrometers. The method is simple in technology, good in operability and low in cost, and has the advantages of good machining quality and binding force, long service life and the like.

Description

technical field [0001] The invention relates to the field of diamond cutter manufacturing, in particular to a processing method for multilayer ultrathin diamond blades. Background technique [0002] Silicon wafers have the characteristics of high hardness, low thermal conductivity, high melting point, and low heat transfer. They are widely used in IC (semiconductor components, integrated circuit) products. With the continuous improvement of manufacturing technology, the integration of IC is getting higher and higher. The wiring width of the silicon wafer is required to be narrower and narrower, and the width of the reserved scribe line is also narrower and narrower. The width of the existing silicon wafer scribe line can reach 50-100 μm. The ultra-thin diamond blade has the characteristics of thin blade, high precision, high strength, good rigidity, and small internal stress, and has become the mainstream silicon wafer slicing tool today. [0003] In recent years, my countr...

Claims

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Application Information

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IPC IPC(8): C25D15/00C25D21/10C25D21/12C25D3/56
Inventor 刘继文刘谦肖跃军韩新博王涛钱江张大林王雪宋林红
Owner SHENYANG ACAD OF INSTR SCI
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