A method for manufacturing a p-type epitaxial substrate laser diode

Abstract

The invention discloses a manufacturing method for a p-type epitaxial substrate laser diode. The method sequentially includes the following steps that (1) a p-GaN epitaxial substrate grows on a sapphire substrate in an epitaxial mode; (2) a light-emitting structure is formed on the p-GaN epitaxial substrate; (3) the light-emitting structure is etched so as to remove positions, on the periphery of the p-GaN epitaxial substrate, of the light-emitting structure, and the light-emitting structure in the central area of the p-GaN epitaxial substrate is retained; (4) p electrodes are formed on the periphery of the p-GaN epitaxial substrate in a sputtering mode.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for manufacturing a p-type epitaxial substrate laser diode. Background technique [0002] Zinc oxide (ZnO) is a new type II-VI direct bandgap wide bandgap semiconductor material. Zinc oxide (ZnO) is similar to GaN in terms of lattice structure, unit cell parameters and bandgap width, and has a higher melting point and greater exciton binding energy than GaN, and has lower photoluminescence and stimulated emission threshold as well as good electromechanical coupling properties, thermal and chemical stability. At room temperature, the band gap of zinc oxide (ZnO) is 3.37eV, and the free exciton binding energy is as high as 60meV, which is much larger than that of GaN, so it is easier to achieve exciton gain at room temperature or higher. However, GaN as a substrate generally includes various defects, such as dislocations, gaps or vacancies, etc. The defects will c...

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Problems solved by technology

[0003] Moreover, in the prior art, the p-electrode is generally formed on the mesa structure of the substrate, such as the diode laser disclosed in Chinese authorized patent CN12099976A, wherein the metal cathode is formed on one side of the active region, and the height of the metal cathode is the same as the height of the active region. The height is almost equal, therefore, the metal cathode will inevitably hinder the light emission of the active area as a light-emitting structure, even if the metal cathode uses a transparent conductive material, the light emitted by the active area cannot pass through the metal cathode without hindrance; therefore the above structure It will also affect the luminous efficiency to a certain extent

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