Accurate forming tool of aluminum silicon carbide composite IGBT (insulated gate bipolar translator) baseplate

Abstract

The invention discloses an accurate forming tool of an aluminum silicon carbide composite IGBT (insulated gate bipolar translator) baseplate. The accurate forming tool comprises an aluminizing box, a guiding pipe and positioning devices, wherein the upper part of the guiding pipe is fixedly connected with a bottom surface of the aluminizing box; the upper part of the aluminizing box is provided with a cover plate which is placed in the aluminizing box, the lower part of the aluminizing box is provided with a bottom plate which is placed in the aluminizing box, the four sides of the aluminizing box are all provided with side plates which are placed in the aluminizing box; the bottom plate is provided with an impregnation flow channel of a molten aluminum alloy liquid; at least two deformation-proof partition plates are arranged among the side plates; the guiding pipe is externally sleeved with a heat preservation device. The accurate forming tool provided by the invention has the advantages that the heat preservation device can reduce the freezing rate of an alloy liquid in the guiding pipe, a final freezing region can be controlled in the position of the heat preservation device, the aluminum alloy liquid can be used for feeding a baseplate material in the aluminizing box in time, and thus a shrinkage cavity of the material is avoided; the positioning devices can strictly control the aluminum covering quantity of the two surfaces of a baseplate, the processing time is short, the cost is low, and the production efficiency is high; the aluminizing flow channel can be used for eliminating a crackle of the material and non-uniformity of an aluminum tape and the material.

Description

technical field [0001] The invention relates to the field of molding of an aluminum silicon carbide composite material substrate, in particular to a vacuum pressure infiltration precision molding tool for an aluminum silicon carbide composite material IGBT substrate. Background technique [0002] Aluminum silicon carbide composite material is an advanced composite material with the advantages of low density, high thermal conductivity, low thermal expansion coefficient and high rigidity. It is widely used in the fields of electronic packaging and aerospace. [0003] The aluminum-silicon carbide composite IGBT substrate needs to be covered with aluminum on both sides, and its deformation needs to be controlled. At present, when the composite material is prepared by vacuum pressure infiltration, stainless steel tooling and stainless steel partitions are used, and the cost is low. However, due to the large difference in thermal expansion coefficient between aluminum and silicon ...

AI Technical Summary

Problems solved by technology

Alumina fiber is clamped on the silicon carbide IGBT substrate prefabricated part, and then clamped with a stainless steel plate brushed with a release agent, tightened with a screw, and aluminized in a vacuum pressure impregnation furnace, which can realize double-sided coating of the aluminum silicon carbide IGBT substrate Aluminum alloy, however, the formed aluminum alloy layer is not dense, and there are a large number of micropores

In addition, the aluminizing method used requires a lot of mechanical processing in the future, and in order to ensure that the double-sided aluminum coating is uniform and does not expose SiC, the processing is very difficult and the processing cost is high

Images