Bi1-xSmxFe0.94Mn0.04Cr0.02O3 ferroelectric film with high remanent polarization and low leakage current density and preparation method thereof

A polarization, ferroelectric thin film technology, applied in chemical instruments and methods, inorganic chemistry, iron compounds, etc., can solve the problem of limited practical application, large leakage current density, inability to obtain saturation and large residual polarization hysteresis loop and other problems, to achieve the effects of precise controllable chemical composition, reduction of oxygen vacancies, and reduction of surface defects

Active Publication Date: 2015-06-24
盐城市鹤业实业投资有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, pure phase BiFeO 3 The thin film has the problem of large leakage current density, which makes it impossible to obtain a hysteresis loop with saturated and large remanent polarization, thus limiting its practical application

Method used

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  • Bi1-xSmxFe0.94Mn0.04Cr0.02O3 ferroelectric film with high remanent polarization and low leakage current density and preparation method thereof
  • Bi1-xSmxFe0.94Mn0.04Cr0.02O3 ferroelectric film with high remanent polarization and low leakage current density and preparation method thereof
  • Bi1-xSmxFe0.94Mn0.04Cr0.02O3 ferroelectric film with high remanent polarization and low leakage current density and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·5H2 O, C 4 h 6 MnO 4 4H 2 O and Cr(NO 3 ) 3 9H 2 O was mixed according to the molar ratio of 1.05:0.94:0.04:0.02, dissolved in ethylene glycol methyl ether, and stirred for 30 minutes. After being dissolved, acetic anhydride was added, and then the viscosity was adjusted with ethanolamine. After magnetic stirring for 3 hours, a stable BiFe 0.94 mn 0.04 Cr 0.02 o 3 Precursor solution; Wherein, the volume ratio of the added ethylene glycol methyl ether, acetic anhydride and ethanolamine is 14:5:1, BiFe 0.94 mn 0.04 Cr 0.02 o 3 The concentration of metal ions in the precursor solution is 0.003-0.3mol / L;

[0024] 2) Spin-coating BiFe 0.94 mn 0.04 Cr 0.02 o 3 Precursor solution is uniformly glued on the FTO / glass substrate whose surface reaches atomic cleanliness to prepare thin films. Annealed to obtain high remnant polarization and low leakage current density BiFe 0.94 mn 0.04 Cr 0.02 o 3 Ferroelectric thin fil...

Embodiment 2

[0027] 1) Bi(NO 3 ) 3 ·5H 2 O, Sm(NO 3 ) 3 ·6H 2 O, Fe(NO 3 ) 3 ·5H 2 O, C 4 h 6 MnO 4 4H 2 O and Cr(NO 3 ) 3 9H 2 O was mixed according to the molar ratio of 1.00:0.05:0.96:0.04:0.02, dissolved in ethylene glycol methyl ether, stirred for 30 min, and after dissolving, acetic anhydride was added, and then the viscosity was adjusted with ethanolamine, and a stable Bi was obtained after magnetic stirring for 3 h. 0.95 SM 0.05 Fe 0.94 mn 0.04 Cr 0.02 o 3 Precursor solution; Wherein, the volume ratio of the added ethylene glycol methyl ether, acetic anhydride and ethanolamine is 14:5:1, Bi 0.95 SM 0.05 Fe 0.94 mn 0.04 Cr 0.02 o 3 The metal ion concentration in the precursor solution is 0.003-0.3 mol / L.

[0028] 2) The Bi 0.95 SM 0.05 Fe 0.94 mn 0.04 Cr 0.02 o 3 Precursor liquid uniform glue is prepared on the FTO / glass substrate whose surface reaches the atomic cleanliness. The glue uniform speed is 4000r / min, and the glue is glued for 15s. Annealed...

Embodiment 3

[0031] 1) Bi(NO 3 ) 3 ·5H 2 O, Sm(NO 3 ) 3 ·6H 2 O, Fe(NO 3 ) 3 ·5H 2 O, C 4 h 6 MnO 4 4H 2 O and Cr(NO 3 ) 3 9H 2 O was dissolved in ethylene glycol methyl ether at a molar ratio of 0.98:0.07:0.96:0.04:0.02, stirred for 30 minutes, added acetic anhydride, and then used ethanolamine to adjust the viscosity, and a stable Bi was obtained after magnetic stirring for 3 hours. 0.93 SM 0.07 Fe 0.94 mn 0.04 Cr 0.02 o 3 Precursor solution; Wherein, the volume ratio of the added ethylene glycol methyl ether, acetic anhydride and ethanolamine is 14:5:1, Bi 0.93 SM 0.07 Fe 0.94 mn 0.04 Cr 0.02 o 3 The concentration of metal ions in the precursor solution is 0.003-0.3mol / L;

[0032] 2) The Bi 0.93 SM 0.07 Fe 0.94 mn 0.04 Cr 0.02 o 3 Precursor liquid uniform glue is prepared on the FTO / glass substrate whose surface reaches the atomic cleanliness. The glue uniform speed is 3500r / min, and the glue is glued for 15s. Annealed to obtain high remnant polarization ...

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Abstract

The invention relates to a Bi1-xSmxFe0.94Mn0.04Cr0.02O3 ferroelectric film with high remanent polarization and low leakage current density and a preparation method thereof. The method comprises the steps of dissolving bismuth nitrate, ferric nitrate, samarium nitrate, manganese acetate and chromic nitrate into mixed ethylene glycol monomethyl ether according to the mole ratio of (1.05-x): x: 0.94: 0.04: 0.02, then, adding acetic anhydride, and adding ethanolamine to adjust viscosity, so as to obtain a Bi1-xSmxFe0.94Mn0.04Cr0.02O3 precursor solution with the metal ion concentration of 0.003-0.3mol / L; uniformly dispensing the Bi1-xSmxFe0.94Mn0.04Cr0.02O3 precursor solution on a FTO / glass substrate, of which the surface reaches atomic cleanliness, by adopting a spin-coating method, so as to prepare a film, then, drying to obtain a dry film, and then, adopting a layer-by-layer annealing process, thereby obtaining the Bi1-xSmxFe0.94Mn0.04Cr0.02O3 film. The method has the advantages that the requirements for equipment are simple, the experimental conditions are easily met, the prepared film is relatively good in uniformity and easy in doped amount control, the remanent polarization of the film is increased greatly, and the leakage current density of the film is reduced effectively.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a high remanent polarization and low leakage current density Bi 1-x SM x Fe 0.94 mn 0.04 Cr 0.02 o 3 Ferroelectric thin film and its preparation method. Background technique [0002] BiFeO 3 As one of the very few new single-phase multiferroic materials with ferroelectricity, ferromagnetism, antiferroelectricity and antiferromagnetism at room temperature. BiFeO 3 It has a simple perovskite structure with trigonal distortion, its ferroelectric Curie temperature at room temperature Tc=810°C, and its ferromagnetic Neel temperature TN=380°C. BiFeO 3 Thin films have aroused great interest due to their wide application potential in information storage, spintronic devices, information storage, image display, pyroelectric effect, and miniaturized integrated electronic devices. However, pure phase BiFeO 3 The thin film has the problem of large leakage current density, which ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00
Inventor 谈国强刘文龙
Owner 盐城市鹤业实业投资有限公司
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