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Novel photoresist removal liquid used for semiconductor making

A new type of photosensitive film technology, applied in the direction of photosensitive material processing, etc., can solve the problems of insufficient cleaning ability, wafer pattern and substrate corrosion.

Active Publication Date: 2014-02-26
珠海特普力高精细化工有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a photosensitive film with strong cleaning ability and good for the semiconductor wafer pattern and Photosensitive film cleaner with low substrate corrosion

Method used

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  • Novel photoresist removal liquid used for semiconductor making
  • Novel photoresist removal liquid used for semiconductor making
  • Novel photoresist removal liquid used for semiconductor making

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Embodiment 1O', the preparation of O'-diphenyldithiophosphoric acid-N,N-diethylamine

[0043] Add 22.2g of phosphorus pentasulfide (0.1mol) and 37.6g of phenol (0.4mol) into a 250mL three-necked flask, and add 70mL of toluene as a solvent; while stirring, gradually raise the temperature to about 100°C and react for 45min; then raise the temperature until reflux, reflux 3h, the solid gradually disappeared during the reaction; the solution was slightly cold, boiled with a small amount of activated carbon to decolorize, filtered while it was hot, and the filtrate was cooled to room temperature; the obtained filtrate was transferred to a beaker, cooled in a water bath, and 22 mL of diethylamine was added drop by drop under stirring (0.2mol), the reaction system emits a large amount of heat, and the color of the liquid gradually becomes orange-red. When stirred rapidly with a glass rod, precipitation occurs, and it is left standing overnight at room temperature; filtered unde...

Embodiment 2

[0044] The preparation of embodiment 2 thiourea capric acid imidazoline quaternary ammonium salt

[0045] Put 17.2g of capric acid, 12.9g of diethylenetriamine, and 40mL of xylene into a three-necked flask, heat it, and react at a temperature of 140-160°C for 2 hours; then continue to increase the temperature to 190-210°C for the cyclization reaction 2h, then cool the reactant to 90-110°C, slowly add 12.65g of benzyl chloride dropwise, keep the reaction for 3h, and obtain the capric acid imidazoline quaternary ammonium compound; continue to keep warm at 90-110°C, add 7.1g of thiourea After reacting for 1.5h, the imidazoline quaternary ammonium salt of thioureido caprylic acid was obtained.

Embodiment 3

[0046] Example 3 Cleaning solution 1

[0047] 25 g of N-ethyl urethane, 8 g of ethylene glycol monobutyl ether, 4 g of gallic acid, 90 g of organic solvent dimethyl sulfoxide and O', O'-diphenyl dithiophosphoric acid prepared in Example 1 - 4 g of N,N-diethylamine and 4 g of thioureidocaprylic acid imidazoline quaternary ammonium salt prepared in Example 2 were mixed and stirred until clear to obtain cleaning solution 1.

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PUM

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Abstract

The invention provides a novel photoresist removal liquid. The novel photoresist removal liquid comprises pentaerythritol, potassium hydroxide, organic amine, an anticorrosive agent and a solvent. The novel photoresist removal liquid has a light-sensitive film cleaning capability, and has a low corrosive property to wafer patterns and base materials of semiconductors.

Description

technical field [0001] The invention relates to the technical field of semiconductor process manufacturing, in particular to a novel photoresist removing solution. Background technique [0002] Photosensitive material is an emerging material widely used in the semiconductor manufacturing industry. In the usual semiconductor manufacturing process, a photosensitive film mask is formed on the surface of some materials, and pattern transfer is performed after exposure. After obtaining the required pattern, the remaining photosensitive film needs to be peeled off before the next process. In this process, it is required to completely remove the unnecessary photosensitive film without corroding any substrate. [0003] At present, the photosensitive film cleaning solution is mainly composed of polar organic solvents, strong alkali and / or water, etc., and the photosensitive film on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning solution or ri...

Claims

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Application Information

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IPC IPC(8): G03F7/42
Inventor 孙霞
Owner 珠海特普力高精细化工有限公司
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