Manufacturing process of pressure sensor sensitive element

Abstract

The invention discloses a manufacturing process for a pressure sensor sensitive element. The first and second boron-doped P-type microcrystalline silicon strips are composed of several microcrystalline silicon resistance wires arranged in the radial direction connected end to end; on a cup-shaped substrate A mixed gas of high-purity oxygen and argon is introduced nearby. The volume ratio of oxygen to argon in the mixed gas is 1:13. The total air pressure is Pa. At a temperature of 250°C, 99.95% of the particles are bombarded with an argon ion beam with an acceleration energy of 2000eV. Silicon dioxide target material, deposits a silicon dioxide isolation layer with a thickness of 1 to 5 μm as an insulating isolation layer; with a resistivity of Ω﹒ m-doped boron silicon is used as the target material. In a high-purity argon atmosphere, the ion beam sputtering method is used, the growth temperature is 300°C, and a layer with a thickness of 1 to 5 μm is prepared on the silicon dioxide isolation layer by covering the first mask. Boron-doped P-type microcrystalline silicon strip. The sensitive layer film of the invention has strong adhesion, which not only greatly improves the measurement range, but also improves the accuracy and sensitivity of sensing, and improves the signal linearity of the pressure sensor.

Description

technical field [0001] The invention relates to a pressure sensor, in particular to a manufacturing process of a pressure sensor sensitive element. Background technique [0002] The role of pressure sensors in modern industrial production and industrial control measurement is becoming more and more important. Many pressure and pressure measurement components, such as automotive engine pressure sensors, artillery chamber pressure measurement sensors, nuclear explosion or chemical explosion shock wave and seismic wave measurement sensors, require a high working temperature (such as above 200 ℃), and require the sensor to have a short response time , high measurement accuracy. [0003] Compared with other types of pressure sensors, piezoresistive pressure sensors are characterized by easy processing and easy signal measurement. The structure of a typical piezoresistive pressure sensor sensitive element adopts epitaxial N-type silicon on a P-type silicon substrate to form a re...

AI Technical Summary

Problems solved by technology

As the temperature increases, the leakage current of the reverse-biased PN junction insulation layer will increase rapidly, so the piezoresistive pressure sensor that relies on the reverse-biased PN junction insulation can only work below 125°C

Images