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B-site Mn and Cu codoped high remanent polarization BiFeO3 film and preparation method

A polarization, high residual technology, applied in chemical instruments and methods, iron compounds, inorganic chemistry, etc., can solve the problem that ferroelectricity cannot correctly measure saturation polarization, it is difficult to observe hysteresis loop, low dielectric Constant and other problems, to achieve the effect of solving Fe valence change, increasing the number of flips, and improving multiferroic properties

Active Publication Date: 2014-03-05
盐城梦心缘鞋服有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Fluctuations in the valence state of Fe lead to a large leakage conductance, making BiFeO 3 The leakage current is large, and due to the large leakage conduction, the ferroelectricity cannot be measured correctly and saturation polarization is obtained
On the other hand, BiFeO 3 The properties of low dielectric constant and low resistivity make it difficult to observe the hysteresis loop
These characteristics greatly limit its application

Method used

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  • B-site Mn and Cu codoped high remanent polarization BiFeO3 film and preparation method
  • B-site Mn and Cu codoped high remanent polarization BiFeO3 film and preparation method
  • B-site Mn and Cu codoped high remanent polarization BiFeO3 film and preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, C 4 h 6 MnO 4 4H 2 O and Cu(NO 3 ) 2 ·3H 2 O is dissolved in the mixed solution formed by mixing ethylene glycol methyl ether and acetic anhydride at a molar ratio of 1.05:0.95:0.04:0.01, and then stirred for 2 hours to make it uniform to obtain BiFeO 3 Precursor; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0025] 2) BiFeO 3 The precursor solution was left to stand for 24h, and then spin-coated BiFeO on the FTO / glass substrate 3 The wet film was prepared from the precursor solution, and the wet film was baked at 200°C for 10 minutes to obtain a dry film, and then rapidly annealed at 550°C for 12 minutes to obtain crystalline BiFeO 3 film.

[0026] 3) To be crystalline BiFeO 3 After film cooling, repeat step 2) again until crystalline BiFeO 3 The film reache...

Embodiment 2

[0028] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, C 4 h 6MnO 4 4H 2 O and Cu(NO 3 ) 2 ·3H 2 O is dissolved in the mixed solution formed by mixing ethylene glycol methyl ether and acetic anhydride at a molar ratio of 1.05:0.94:0.04:0.02, and then stirred for 2 hours to make it uniform to obtain BiFeO 3 Precursor; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0029] 2) BiFeO 3 The precursor solution was left to stand for 32h, and then spin-coated BiFeO on the FTO / glass substrate 3 The wet film was prepared from the precursor solution, and the wet film was baked at 200°C for 5 minutes to obtain a dry film, and then rapidly annealed at 550°C for 10 minutes to obtain crystalline BiFeO 3 film;

[0030] 3) To be crystalline BiFeO 3 After film cooling, repeat step 2) again until crystalline BiFeO 3 The film reaches ...

Embodiment 3

[0036] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, C 4 h 6 MnO 4 4H 2 O and Cu(NO 3 ) 2 ·3H 2 O is dissolved in the mixed solution formed by mixing ethylene glycol methyl ether and acetic anhydride at a molar ratio of 1.05:0.93:0.04:0.03, and then stirred for 2 hours to make it uniform to obtain BiFeO 3 Precursor; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0037] 2) BiFeO 3 The precursor solution was left to stand for 28h, and then spin-coated BiFeO on the FTO / glass substrate 3 The wet film was prepared from the precursor solution, and the wet film was baked at 200°C for 7 minutes to obtain a dry film, and then rapidly annealed at 550°C for 15 minutes to obtain crystalline BiFeO 3 film;

[0038] 3) To be crystalline BiFeO 3 After film cooling, repeat step 2) again until crystalline BiFeO 3 The film reaches...

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Abstract

The invention relates to a B-site Mn and Cu codoped high remanent polarization BiFeO3 film and a preparation method, the method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, manganese acetate and cupric nitrate according to mol ratio of 1.05: [(0.92-0.98)-x]: (0.02-0.08):x in a mixed liquor of ethylene glycol monomethyl ether and acetic anhydride, then uniformly stirring to obtain a BiFeO3 precursor; wherein total metal ion concentration of the BiFeO3 precursor is 0.1-0.5mol / L, X is 0.01-0.03; performing spin coating of the BiFeO3 precursor on a FTO / glass substrate to prepare a wet membrane, baking the wet membrane to obtain a dry membrane, then annealing at 550 DEG C to obtain the crystalline state BiFeO3 film; cooling the crystalline state BiFeO3 film, and repeatedly making the crystalline state BiFeO3 film to reach a required thickness to obtain the B-site Mn and Cu codoped high remanent polarization BiFeO3 film. According to the invention, a sol gel technology is employed, the equipment requirement is simple, the film is prepared on large surface and surfaces with irregular shapes, the chemical component is accurate and controllable, and the regulation and control to its crystal structure can be carried out by codoping thereby the ferroelectric performance of the film is greatly increased.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a B-site Mn and Cu co-doped BiFeO with high remnant polarization 3 Thin films and methods for their preparation. Background technique [0002] BiFeO 3 It is one of the few single-phase multiferroic materials that have both ferroelectric and ferromagnetic properties at room temperature. temperature is 370°C). As people's requirements for the miniaturization of electronic devices are getting higher and higher, the research on this single-phase material with multiple functions at the same time has attracted people's attention. Therefore BiFeO 3 It has become an important functional material that can be widely used in the fields of new memory devices, spintronic devices, microelectronics, optoelectronics, integrated optics, and microelectromechanical systems. [0003] However, currently limiting BiFeO 3 The biggest problem for thin film applications is the low resistivity, w...

Claims

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Application Information

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IPC IPC(8): C01G49/00
Inventor 谈国强董国华罗洋洋
Owner 盐城梦心缘鞋服有限公司
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