Growing apparatus and method for Ti sapphire crystal

A technology of crystal growth, titanium sapphire, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of crystal cracking, affecting crystal quality, existence of mosaic structure, etc., to overcome the limitation of crystal diameter, improve the speed and quality effect

Inactive Publication Date: 2014-04-16
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that when growing a large-diameter titanium sapphire crystal, the crystal is severely cracked or there is a mosaic structure in the crystal, which seriously affects the quality of the crystal

Method used

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  • Growing apparatus and method for Ti sapphire crystal
  • Growing apparatus and method for Ti sapphire crystal
  • Growing apparatus and method for Ti sapphire crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The growth of titanium sapphire crystal is carried out by using the above-mentioned titanium sapphire crystal growth device and the process steps of growing titanium sapphire crystal

[0038] Molybdenum crucible 10 length 140 × width 110 × height 140mm 3 , the wall thickness of the crucible is 3.5mm, with a square seed crystal groove 11 deep 4×width 10×length 50mm in the center of the bottom 3 square cone crucible. The graphite heater is a Z-shaped plate, and the heat preservation device is graphite hard felt. The A-oriented titanium sapphire slab seed crystal is used. 7.5kg of titanium sapphire raw material is loaded into the crucible with the seed crystal matching the seed crystal groove 11 installed at the bottom. Adjust the positions of the crucible and the thermocouple, turn on the vacuum system 12 after the furnace is installed, and raise the temperature to 1480°C while evacuating. When the vacuum in the furnace body 9 reaches 3×10 -3 After Pa, fill with high-...

Embodiment 2

[0040] The crystal growth device used in this embodiment is the same as that of Embodiment 1, using a length 280×width 140×height 160mm 3 , a crucible with a wall thickness of 3.5mm, with a square seed crystal groove in the center of the bottom 11 deep 4×width 15×length 120mm 3 square cone crucible. The graphite heater is a Z-shaped plate, and the heat preservation device is graphite hard felt. The A-oriented titanium sapphire slab seed crystal is used. 20.5kg of titanium sapphire raw material is packed into the crucible with the seed crystal matching the seed crystal tank 11 installed at the bottom. Adjust the positions of the crucible and the thermocouple, turn on the vacuum system 12 after the furnace is installed, and raise the temperature to 1480°C while evacuating. When the vacuum in the furnace body 2 reaches 3×10 -3 After Pa, fill it with high-purity argon gas protection, continue to heat up to 2060 ° C, start the seed crystal probe lifting mechanism to detect the m...

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Abstract

The invention provides a growing apparatus and method for a Ti sapphire crystal. The growing apparatus comprises a box type vacuum resistance furnace, wherein a vacuum system is arranged on a casing of a furnace body; a structure in the furnace body comprises a crucible and heaters, the crucible is arranged in the central position inside the furnace body, and the square crucible is provided with a stripped seed crystal slot in the central area of the bottom; the Z-shaped heaters are arranged in front and at the back of the crucible, and a box type graphite hard-felt heat insulating cover is arranged on the peripheries of the heaters; a crucible support is arranged under the crucible, and a thermoelectric coupler for measuring and controlling the temperature is arranged in the position, close to the seed crystal slot, below the crucible; and seed crystal probes are arranged on the outside of the heat insulating cover right above the crucible. The apparatus can be used for growing the Ti sapphire crystal with a larger size, so that the crystal growth speed and quality are greatly improved, the problem of limitation of diameter of the Ti sapphire crystal to the length ratio is solved, the growth period of the Ti sapphire crystal is substantially reduced, and complete high-quality Ti sapphire crystal is grown out.

Description

technical field [0001] The invention relates to single crystal growth, in particular to a titanium sapphire crystal growth device and a growth method thereof. Background technique [0002] Titanium sapphire crystal (Ti:Al 2 o 3 ) has become an excellent solid-state wide-tunable laser material due to its broadband tunability and excellent optical, thermal, physical, chemical and mechanical properties. The growth of large-diameter and high-quality Ti:sapphire crystals is used in the research of Ti:sapphire laser devices with high repetition rate and high energy output and picosecond and femtosecond ultrashort pulses. Growing large-caliber, high-quality Ti:sapphire crystals, improving their doping uniformity, and improving the absorption coefficient and integrity can further increase the output power and light intensity of solid-state lasers, which is very important for the development of laser technology. As a potential laser crystal, Ti:Sapphire crystal has a promising fut...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B15/36C30B15/14C30B15/26
Inventor 张小翠司继良徐民
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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