Organic light-emitting device and preparation method thereof
An electroluminescent device and luminescent technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effects of improving light transmittance, cheap materials, and excellent packaging effects
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[0054] Example 1:
[0055] A method for preparing an organic electroluminescent device includes the following steps:
[0056] (1) ITO glass substrate 1 pre-treatment: acetone cleaning→ethanol cleaning→deionized water cleaning→ethanol cleaning, all are cleaned with an ultrasonic cleaning machine, and a single wash is cleaned for 5 minutes, then dried with nitrogen, and dried in an oven for later use; Perform surface activation treatment on the cleaned ITO glass substrate 1 to increase the oxygen content of the conductive surface layer and increase the work function of the conductive layer surface; the thickness of ITO is 100 nm;
[0057] (2) Preparation of functional layer and light-emitting layer:
[0058] Hole injection layer 2: MoO is evaporated on ITO glass 1 3 Mixed material obtained by doping with NPB, MoO 3 The doping mass fraction of is 30%, and the evaporation is carried out by high vacuum coating equipment, and the vacuum degree during evaporation is 1×10 -5 Pa, the evaporati...
Example Embodiment
[0070] Example 2:
[0071] A method for preparing an organic electroluminescent device includes the following steps:
[0072] (1), (2), (3) are the same as in Example 1;
[0073] (4) Preparation of organic barrier layer: CuPc is prepared on the cathode layer by vacuum evaporation, with a vacuum degree of 5×10 -5 Pa, evaporation rate Thickness 250nm;
[0074] (5) Preparation of inorganic barrier layer: the inorganic barrier layer is prepared on the organic barrier layer by vacuum evaporation. The material of the inorganic barrier layer is a mixture of low refractive index material and high refractive index material. The low refractive index material is MgF 2 , High refractive index materials are ZnSe, MgF 2 The mass fraction of the whole film is 60%, and the vacuum degree is 5×10 -5 Pa, evaporation rate Thickness of 100nm;
[0075] (6) After step (5), an inorganic barrier layer is prepared using the same method and material as in step (4), and then an organic barrier layer is prepared...
Example Embodiment
[0078] Example 3:
[0079] A method for preparing an organic electroluminescent device includes the following steps:
[0080] (1), (2), (3) are the same as in Example 1;
[0081] (4) Preparation of organic barrier layer: NPB is prepared on the cathode layer by vacuum evaporation, the vacuum degree is 5×10 -5 Pa, evaporation rate 200nm thickness;
[0082] (5) Preparation of inorganic barrier layer: the inorganic barrier layer is prepared on the organic barrier layer by vacuum evaporation. The material of the inorganic barrier layer is a mixture of low refractive index material and high refractive index material. The low refractive index material is LiF, the high refractive index material is CdS, the mass fraction of LiF in the entire film is 50%, and the vacuum degree is 5×10 -5 Pa, evaporation rate 150nm thickness;
[0083] (6) After step (5), an inorganic barrier layer is prepared using the same method and material as in step (4), and then an organic barrier layer is prepared on the...
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