Method for growing gate dielectric on gallium nitride substrate and electrical performance testing method

Abstract

The invention provides a method for growing gate dielectric on a gallium nitride substrate and an electrical performance testing method. The method for growing gate dielectric on the gallium nitride substrate comprises the steps of providing the gallium nitride substrate; performing in-situ ammonia plasma pretreatment to the gallium nitride substrate to compensate nitrogen onto the surface of gallium nitride; growing an aluminum oxide transition layer on the surface of the gallium nitride substrate; growing a gate dielectric thin film on the surface of the aluminum oxide transition layer. The method for growing gate dielectric on the gallium nitride substrate and the electrical performance testing method provided by the invention has the advantages that the high-quality gate dielectric can be grown on the gallium nitride substrate and the electrical performance of the gate dielectric can be simply and conveniently tested.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a method for growing a gate dielectric on a gallium nitride substrate and an electrical performance testing method. Background technique [0002] Semiconductor materials are key basic materials for the production of electronic components such as integrated circuits, transistors, power electronic devices, and semiconductor optoelectronic devices. They support the development of electronic information industries such as communications, computers, and network technologies, and are known as the food of electronic information. In the development of semiconductors, silicon and germanium are generally called the first-generation semiconductor materials; gallium arsenide, gallium phosphide, indium phosphide, aluminum arsenide and their alloys are the second-generation semiconductor materials; Wide-bandgap semiconductor materials with a width greater than 2.3ev, such as galliu...

AI Technical Summary

Problems solved by technology

Although there is no urgent requirement for gate dielectric thickness in the manufacture of MIS-HEMT devices like silicon CMOS devices, the advantages of using high-K gate dielectrics on GaN are also obvious. Exhaust type devices are mainly used, so the threshold voltage is negative, and if a dielectric layer is added, the threshold voltage negative drift will be more serious, usually drifting to about -8~10V, which is obviously not conducive to the application of the device

Another important factor is that a defect of MIS-type HEMT devices is that the insertion of the dielectric layer has a great influence on the gate capacitance, which usually greatly reduces the gate capacitance of the device.

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