Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing highly chemically reactive tellurium colloidal solution and telluride nanomaterials

A nanomaterial and chemical reaction technology, applied in the field of preparing tellurium colloid solutions and telluride nanomaterials, can solve problems such as cumbersome processes, and achieve the effect of uniform distribution and small size

Active Publication Date: 2016-01-06
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned process for preparing telluride is cumbersome. After adding the reducing agent, the pH value of the solution needs to be adjusted, and it is also necessary to add a stabilizer, surfactant or surfactant to the solution.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing highly chemically reactive tellurium colloidal solution and telluride nanomaterials
  • Method for preparing highly chemically reactive tellurium colloidal solution and telluride nanomaterials
  • Method for preparing highly chemically reactive tellurium colloidal solution and telluride nanomaterials

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0018] The method for preparing highly chemically reactive tellurium colloidal solution of the present invention, its preferred embodiment is:

[0019] The corresponding tellurium colloidal solution was obtained by pulsed laser ablation of an elemental tellurium target placed in deionized water.

[0020] The purity of the elemental tellurium target is greater than or equal to 99.999%.

[0021] The wavelength of the pulsed laser is 1064nm, the energy is 80mJ / pulse, and the time for ablation of the elemental tellurium target is 5 minutes.

[0022] The pulsed laser is obtained by Nd:YAG pulsed laser.

[0023] During the ablation process, laser ablation is performed while rotating the tellurium target.

specific Embodiment approach

[0024] The method for preparing telluride nanomaterials of the present invention, its preferred embodiment is:

[0025] The corresponding telluride nanomaterials can be prepared by using the highly chemically reactive tellurium colloidal solution prepared above as a reaction precursor and chemically reacting with a metal ion salt solution.

[0026] After the tellurium colloidal solution is uniformly mixed with the metal ion salt solution, the water bath is heated to 60° C. for a constant temperature reaction, and telluride nanospheres with uniform size distribution can be obtained.

[0027] The telluride nanomaterials include any one or more of the following: Ag 2 Te, CuTe, CdTe, PbTe, ZnTe, Bi 2 Te 3 , Sb 2 Te 3 .

[0028] The salt solution is a nitrate solution.

[0029] The highly reactive tellurium colloidal solution prepared by the present invention, the tellurium nanoparticles obtained by LAL technology have the characteristics of small size, uniform distribution, ...

specific Embodiment

[0033] Take the preparation of silver telluride as an example:

[0034] Such as figure 1 As shown, firstly, a highly reactive tellurium colloidal solution was prepared by LAL technology, and then mixed with a certain amount of silver nitrate (AgNO 3 ) solution mixed evenly, heated to 60°C in a water bath, and after a period of reaction, silver telluride (Ag 2 Te) nanospheres.

[0035] The method for preparing highly reactive tellurium colloidal solution using LAL technology is as follows:

[0036] Place the tellurium elemental target with a purity of 99.999% in a container filled with 15ml of deionized water, and use a Nd:YAG pulsed laser (laser wavelength 1064nm, energy 80mJ / pulse) to ablate the tellurium elemental target for 5 minutes. During the etching process, a rotating tellurium target is used for laser ablation (a colloidal solution of uniform and fine nanoparticles can be obtained by using a rotating target ablation).

[0037] Preparation of Ag with uniform partic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
lattice spacingaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a tellurium colloid solution with high chemical activity and a telluride nanometer material. The method comprises the following steps: corroding an elementary tellurium target placed into deionized water by using pulse laser light to obtain a corresponding tellurium colloid solution; performing a chemical reaction on tellurium nanoparticles which are small in sizes, distributed uniformly, clean in surfaces and taken as a reaction precursor and a saline solution of metal ions to obtain a corresponding telluride nanometer material successfully.

Description

technical field [0001] The invention relates to a technology for preparing a tellurium colloid solution and a telluride nano material, in particular to a method for preparing a tellurium colloid solution with high chemical reactivity and a telluride nano material. Background technique [0002] Tellurium belongs to group VIA, is a very typical metalloid element, and is also an important narrow-bandgap semiconductor material. Because tellurium has a series of unique physical and chemical properties, such as nonlinear optical response, piezoelectricity, catalytic activity, photoconductivity and thermoelectricity, it has potential application prospects in many fields. Metal compounds of tellurium, such as CdTe, ZnTe, PbTe, etc., are widely used in semiconductor light-emitting devices, thermoelectric materials, nonlinear optical materials, photoelectric conversion devices, photosensitive sensor materials, photocatalytic materials, and hydrogen storage due to their wide band gaps....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/02C01B19/04B82Y30/00
Inventor 张峰通刘俊梁长浩
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More