Preparation method of three-dimensional layered multilevel flower-shaped stannic oxide microsphere

Abstract

The invention discloses a preparation method of a three-dimensional layered multilevel flower-shaped stannic oxide microsphere, belonging to the field of material preparation processes. The preparation method comprises the steps: adding tin dichloride dihydrate powder in a mixed solution of alcohol and water (volume ratio of 1:1), through controlling a concentration and a temperature of tin ions and an amount of urea, and preparing stannic oxide materials of different morphologies, with a three-dimensional multilevel layered structure, under a hydrothermal condition. Researches on the prepared materials prove that the urea is an important influence factor of controlling the three-dimensional multilevel layered structure of stannic oxide, and an oxidation function is a key factor of forming a nanometer sheet. According to the preparation method, the reaction cost can be reduced, the production efficiency of the stannic oxide nano material is increased; and the prepared nano material is controllable in morphology, and has the advantages of high purity, high performance, large specific surface area, and the like, and can be widely applied to new energy devices such as a lithium ion battery, a solar energy battery, a supercapacitor, and can also be applicable to the fields of a catalyst carrier and an information material. Any surfactant or template is needed for assistance, no toxic and harmful organic solvent is used, and used raw materials are low in price and easy to obtain, thus the preparation method is an environment-friendly preparation method.

Description

technical field [0001] The invention discloses a preparation method of a three-dimensional layered multi-stage flower-shaped tin dioxide microsphere, which belongs to the field of material preparation technology. Background technique [0002] Tin dioxide is a typical direct wide bandgap n - type semiconductor functional material, its bulk bandgap is about 3.6eV (at 300K), the exciton binding energy is 130meV, and the exciton Bohr radius is about 27nm. , gas sensors and other important application materials. Due to the advantages of physical or chemical properties such as high transition probability and high electron mobility, this semiconductor material is widely used in many fields such as microelectronics industry, optoelectronic devices, and photothermal converters of solar cells. However, the microstructure, particle size and dimension of tin dioxide have a great influence on its physical or chemical properties. For example, the three-dimensional layered structure not ...

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Problems solved by technology

The disadvantage is that the particle growth rate is slow, the experiment efficiency is low, and the instrument is expensive, and the experiment cost is high

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