Unlock instant, AI-driven research and patent intelligence for your innovation.

GaN-based ultra-thin barrier enhancement mode inverter, ring oscillator and manufacture method of GaN-based ultra-thin barrier enhancement mode inverter

An enhanced mode and inverter technology, applied in the field of microelectronics, can solve problems such as easy drift of threshold voltage, difficulty in integration, complex process, etc., and achieve excellent frequency characteristics, easy integration, and simple process

Inactive Publication Date: 2014-06-18
CHANGAN UNIV
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] 1. Option 1 has a complex process, and the thickness of the barrier layer of the enhancement-mode and depletion-mode devices is inconsistent, so it is difficult to integrate on the same wafer
[0015] 2. Option 2 has a complex process and poor repeatability of groove gate etching, so the uniformity of the device is poor, and there are big problems in the preparation of large-scale integrated circuits
[0016] 3. The reliability of the enhanced device in scheme 3 is poor, and the threshold voltage of the device is easy to drift under electrical stress and thermal stress, so the reliability of the circuit is poor
[0017] 4. The reliability of the enhanced device in Scheme 4 is poor, and due to the large distance from the gate electrode to the channel, the frequency characteristics of the device are poor, so the circuit reliability and frequency characteristics are poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GaN-based ultra-thin barrier enhancement mode inverter, ring oscillator and manufacture method of GaN-based ultra-thin barrier enhancement mode inverter
  • GaN-based ultra-thin barrier enhancement mode inverter, ring oscillator and manufacture method of GaN-based ultra-thin barrier enhancement mode inverter
  • GaN-based ultra-thin barrier enhancement mode inverter, ring oscillator and manufacture method of GaN-based ultra-thin barrier enhancement mode inverter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Fabricate GaN / AlGaN / AlN / GaN (2nm / 5nm / 1.5nm / 1μm) ultra-thin barrier enhancement mode (E-mode) inverter on sapphire substrate, the steps are as follows:

[0056] In step 1, an AlN nucleation layer is grown on the sapphire substrate by MOCVD process.

[0057] Put the sapphire substrate into the reaction chamber of the metal-organic chemical vapor deposition MOCVD equipment, when the vacuum degree of the reaction chamber drops to 1×10 -2 After Torr, the sapphire substrate is subjected to high-temperature heat treatment and surface nitriding under the protection of a mixed gas of hydrogen and ammonia. The heating temperature is 1050°C, the heating time is 5min, and the pressure is kept at 40Torr during the reaction. The ammonia gas flow rate is 1500 sccm, and the hydrogen gas flow rate is 1500 sccm;

[0058] Lower the substrate temperature to 900° C., and grow an AlN nucleation layer with a thickness of 20 nm. During the reaction, the pressure was kept at 40 Torr, the flow...

Embodiment 2

[0090] Fabricate GaN / AlGaN / AlN / GaN (2nm / 5nm / 1.5nm / 1μm) ultra-thin barrier enhancement / depletion mode (E / D-mode) inverter on SiC substrate, the steps are as follows:

[0091] In step 1, an AlN nucleation layer is grown on the SiC substrate by using an MOCVD process.

[0092] Put the SiC substrate into the reaction chamber of the metal-organic chemical vapor deposition MOCVD equipment, when the vacuum degree of the reaction chamber drops to 1×10 -2 After Torr, the SiC substrate is subjected to high-temperature heat treatment and surface nitriding under the protection of a mixed gas of hydrogen and ammonia. The heating temperature is 1050°C, the heating time is 5min, and the pressure is kept at 40Torr during the reaction. The ammonia gas flow rate is 1500 sccm, and the hydrogen gas flow rate is 1500 sccm;

[0093] Lower the substrate temperature to 900° C., and grow an AlN nucleation layer with a thickness of 20 nm. During the reaction, the pressure was maintained at 40 Torr, t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a GaN-based ultra-thin barrier enhancement mode inverter, a ring oscillator and a manufacture method of the GaN-based ultra-thin barrier enhancement mode inverter. Channel square resistance of ultra-thin barrier hetero-junctions is effectively reduced through the surface SiN. Enhancement mode devices and load resistors can be contained by adjusting the thickness of the under-grate SiN. The under-grate SiN of the enhancement mode devices is etched, the electron concentration of under-grate channels of the devices is quite low, and the devices can present the enhancement mode characteristics of the positive threshold voltage. The SiN is reserved on the surfaces of load resistors, high-concentration two-dimensional electron gas exists in channels of the load resistors, and the load resistors present the resistance characteristics. The inverter can be obtained by integrating the enhancement mode devices with the load resistors, and the ring oscillator can be obtained by cascading the 2n+1 same inverters.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, relates to semiconductor devices and circuits, in particular to a GaN-based ultra-thin barrier enhancement mode (E-mode) inverter, the structure and realization method of ring vibration, mainly used as high temperature resistant, Radiation-resistant integrated circuit base unit. Background technique [0002] As a third-generation semiconductor, GaN material has become a hot topic in modern international research due to its outstanding material properties. The unique polarization effect of GaN materials and the high electron saturation velocity of GaN materials make AlGaN / GaN heterojunction high electron mobility transistors show obvious advantages in high-power microwave devices. In recent years, AlGaN / GaN heterojunction depletion-type high electron mobility transistors have been greatly developed. The AlGaN / GaN high electron mobility transistors developed by T. Palacios et al. The out...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/02H01L21/77
Inventor 全思谷文萍李演明文常保谢元斌巨永锋郝跃
Owner CHANGAN UNIV