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A gan-based ultra-thin barrier enhancement/depletion mode inverter, ring oscillator and manufacturing method thereof

An inverter, ultra-thin technology, applied in the field of microelectronics, can solve problems such as easy drift of threshold voltage, poor circuit reliability and frequency characteristics, complex process, etc., achieve excellent frequency characteristics, increase working range, and large working range Effect

Inactive Publication Date: 2016-06-15
CHANGAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] 1. Option 1 has a complex process, and the thickness of the barrier layer of the enhancement-mode and depletion-mode devices is inconsistent, so it is difficult to integrate on the same wafer
[0015] 2. Option 2 has a complex process and poor repeatability of groove gate etching, so the uniformity of the device is poor, and there are big problems in the preparation of large-scale integrated circuits
[0016] 3. The reliability of the enhanced device in scheme 3 is poor, and the threshold voltage of the device is easy to drift under electrical stress and thermal stress, so the reliability of the circuit is poor
[0017] 4. The reliability of the enhanced device in Scheme 4 is poor, and due to the large distance from the gate electrode to the channel, the frequency characteristics of the device are poor, so the circuit reliability and frequency characteristics are poor

Method used

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  • A gan-based ultra-thin barrier enhancement/depletion mode inverter, ring oscillator and manufacturing method thereof
  • A gan-based ultra-thin barrier enhancement/depletion mode inverter, ring oscillator and manufacturing method thereof
  • A gan-based ultra-thin barrier enhancement/depletion mode inverter, ring oscillator and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Fabricate GaN / AlGaN / AlN / GaN (2nm / 5nm / 1.5nm / 1μm) ultra-thin barrier enhancement / depletion mode (E / D-mode) inverter on sapphire substrate, the steps are as follows:

[0058] In step 1, an AlN nucleation layer is grown on the sapphire substrate by MOCVD process.

[0059] Put the sapphire substrate into the reaction chamber of the metal-organic chemical vapor deposition MOCVD equipment, when the vacuum degree of the reaction chamber drops to 1×10 -2 After Torr, the sapphire substrate is subjected to high-temperature heat treatment and surface nitriding under the protection of a mixed gas of hydrogen and ammonia. The heating temperature is 1050°C, the heating time is 5min, and the pressure is kept at 40Torr during the reaction. The ammonia gas flow rate is 1500 sccm, and the hydrogen gas flow rate is 1500 sccm;

[0060] Lower the substrate temperature to 900° C., and grow an AlN nucleation layer with a thickness of 20 nm. During the reaction, the pressure was kept at 40 To...

Embodiment 2

[0094] Fabricate GaN / AlGaN / AlN / GaN (2nm / 5nm / 1.5nm / 1μm) ultra-thin barrier enhancement / depletion mode (E / D-mode) inverter on SiC substrate, the steps are as follows:

[0095] In step 1, an AlN nucleation layer is grown on the SiC substrate by using an MOCVD process.

[0096] Put the SiC substrate into the reaction chamber of the metal-organic chemical vapor deposition MOCVD equipment, when the vacuum degree of the reaction chamber drops to 1×10 -2 After Torr, the SiC substrate is subjected to high-temperature heat treatment and surface nitriding under the protection of a mixed gas of hydrogen and ammonia. The heating temperature is 1050°C, the heating time is 5min, and the pressure is kept at 40Torr during the reaction. The ammonia gas flow rate is 1500 sccm, and the hydrogen gas flow rate is 1500 sccm;

[0097] Lower the substrate temperature to 900° C., and grow an AlN nucleation layer with a thickness of 20 nm. During the reaction, the pressure was maintained at 40 Torr, t...

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Abstract

The invention provides a GaN-base ultra-thin potential barrier reinforced and depletion mode phase inverter, ring oscillation and a manufacturing method of the phase inverter. By means of surface SiN, channel square resistance of an ultra-thin potential barrier heterojunction is effectively reduced, by means of adjustment of thicknesses of SiN under a gate, a reinforced type component and a depletion type component can be achieved respectively, the SiN under the reinforced type component is etched, the concentration of channel electrons under the gate of the reinforced type component is very low, the reinforced type component can reflect a reinforced characteristic of positive threshold voltage, the SiN is maintained under the gate of the depletion type component, high-concentration two-dimensional electron gases exist under the gate of the depletion type component, the depletion type component reflects a depletion type characteristic of negative threshold voltage, the phase inverter is formed after the reinforced type component and the depletion type component are integrated, then 2n+1 identical phase inverters are in concatenation, and ring oscillation can be achieved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to semiconductor devices and circuits, in particular to a GaN-based ultra-thin barrier enhancement / depletion mode (E / D-mode) inverter, a structure and a realization method of a ring oscillator, mainly for It is used as the basic unit of integrated circuits with high temperature resistance and radiation resistance. Background technique [0002] As a third-generation semiconductor, GaN material has become a hot topic in modern international research due to its outstanding material properties. The unique polarization effect of GaN materials and the high electron saturation velocity of GaN materials make AlGaN / GaN heterojunction high electron mobility transistors show obvious advantages in high-power microwave devices. In recent years, AlGaN / GaN heterojunction depletion-type high electron mobility transistors have been greatly developed. The AlGaN / GaN high electron mobility tran...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L21/77
Inventor 全思徐小波李演明文常保谢元斌巨永锋郝跃
Owner CHANGAN UNIV